FM180 Search Results

FM1808

Abstract: 1kx8 FM1808-120-P FM1808-120-S FM1808-70-P FM1808-70-S
Contextual Info: Preliminary FM1808 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process

FM1808

Abstract: 7058 FM1808-70-P FM1808-70-S MS-011 MS-013
Contextual Info: FM1808 256Kb Bytewide FRAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: FM1808 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process

Contextual Info: FM1808 256Kb Bytewide FRAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM18W08

Abstract: FM1808-70-SG FM1808 fm1808-70-pg MS-013 B063 FM180870SG
Contextual Info: FM1808 256Kb Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM1808-70-SG

Abstract: FM1808-70SG FM1808 FM1808-70-PG MS-013 fm180870pg FM180870SG B063050013G
Contextual Info: FM1808 256Kb Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM1808

Abstract: e1 fram FM1808-120-P FM1808-120-S FM1808-70-P FM1808-70-S MS-013 water level electrical control circuit diagram
Contextual Info: Preliminary FM1808 256Kb Bytewide FRAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High endurance 10 Billion 1010 read/writes • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Superior to BBSRAM Modules

FM1808-70-SG

Abstract: FM1808-70-PG FM1808 B063050013G MS-013
Contextual Info: FM1808 256Kb Bytewide FRAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: FM1808 256Kb Bytewide FRAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: FM1808 256Kb Bytewide FRAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: Preliminary FM1808 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process

Contextual Info: FM180B RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION FM1100B SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 80 to 100 Volts CURRENT 1.0 Ampere FEATURES * * * * * * Low switching noise Low forward voltage drop High current capability High switching capability

Contextual Info: Pre-Production FM1808B 256Kb Bytewide 5V F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention (@ 75°C) NoDelay Writes Advanced High-Reliability Ferroelectric Process

Contextual Info: Preliminary FM1808B 256Kb Bytewide 5V F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention (@ +75°C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: FM1808 256Kb Bytewide FRAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: FM1808 256K b Bytewide F R A M töRaMTRON M em ory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High endurance 10 Billion (1010 read/writes • 10 year data retention at 55° C • NoDelay write • Advanced high-reliability ferroelectric process

FM1100B

Abstract: FM180B
Contextual Info: FM180B RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION FM1100B SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 80 to 100 Volts CURRENT 1.0 Ampere FEATURES * * * * * * Low switching noise Low forward voltage drop High current capability High switching capability

FM1808B

Abstract: FM1808B-SG
Contextual Info: Pre-Production FM1808B 256Kb Bytewide 5V F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 year Data Retention (@ +75C)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

FM1808

Abstract: FM1808-120-P FM1808-120-S FM1808-70-P FM1808-70-S
Contextual Info: Prelim inary FM1808 .R a M T R O N 256Kb Bytewide FRAM Memory Features SRAM & EEPROM Compatible 256K bit Ferroelectric Nonvolatile RAiM • • Organized as 32,768 x 8 bits • • High endurance 10 Billion 1010 read/writes • • • 10 year data retention at 85° C

TCA 720

Abstract: "Ferroelectric RAM" 1822-HEX A8-12 Ramtron International Corporation
Contextual Info: E C N A ADV FM1808S FRAM Memory 262,144-Bit Nonvolatile Ferroelectric RAM Product Preview Features 256K Nonvolatile Ferroelectric RAM Organized as 32,768 words x 8 bits • CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation

fram

Abstract: FM1808 FM1608 FM18L08
Contextual Info: Application Note Replacing SRAM with FRAM Parallel FRAM Design Considerations Ramtron offers three FRAM devices that are pin compatible with industry standard bytewide x8 SRAMs. The FM1608 is an 8Kx8 and the FM1808 and FM18L08 are 32Kx8 devices, all of which may be used

FM1808

Abstract: FM1808-70-P FM1808-70-S MS-011 MS-013 tca 760
Contextual Info: FM1808 256Kb Bytewide FRAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: pÇ. F^M T R O N k Q \J FM1808SFRAM Memory ZToiB ^ t meFe,roéea,icfm Features • 256K Nonvolatile Ferroelectric RAM Organized as 32,768 words x 8 bits ■ CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation - 150ns Read Access

FM1808

Abstract: FM1808-70-P FM1808-70-S MS-011 MS-013
Contextual Info: FM1808 256Kb Bytewide FRAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric