FLS MARKING CODE SOT23 Search Results

BC848

Abstract: BC847
Contextual Info: SIEMENS NPN Silicon AF Transistors BC 846 . BC 850 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC857,

FLs marking code SOT23

Abstract: Q62702-F1066 Q62702-F977
Contextual Info: PNP Silicon High-Voltage Transistors BFN 25 BFN 27 Suitable for video output stages in TV sets and switching power supplies ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: BFN 24, BFN 26 NPN ● Type Marking

FLs marking code SOT23

Contextual Info: BFN27 PNP Silicon High-Voltage Transistors 3 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage 2 • Complementary types: BFN24, BFN26 NPN 1 Type Marking BFN27

Contextual Info: SIEMENS BCR 116 NPN Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=4.7k£2, R2=47k£2 n TT Ordering Code Pin Configuration WGs Q62702-C2337 1= B Package 2=E o Marking BCR 116 II CO Type

Contextual Info: bb53=J31 OOEMbQl IQS • APX N AflER P H ILIP S /D IS C R E T E BCX19 BCX20 b?E D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic envelope, intended for application in thick and thin-film circuits. These transistors are intended fo r general purposes as well as saturated switching and driver applications

marking code sot 23 8fn

Abstract: marking code 8fn
Contextual Info: SIEMENS PNP Silicon High-Voltage Transistors BFN 25 BFN 27 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN 24, BFN 26 NPN Type

marking code 604 SOT23

Abstract: NPN transistors sot-23 26 Q62702-F1065 Q62702-F1066 Q62702-F976 Q62702-F977 IC ua 74
Contextual Info: NPN Silicon High-Voltage Transistors BFN 24 BFN 26 Suitable for video output stages in TV sets and switching power supplies ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: BFN 25, BFN 27 PNP ● Type Marking

BFN26

Abstract: BCW66 BFN27 BFN25
Contextual Info: BFN27 PNP Silicon High-Voltage Transistors • Suitable for video output stages in TV sets and switching power supplies 2 3 • High breakdown voltage 1 • Low collector-emitter saturation voltage • Complementary types: BFN26 NPN Type BFN27 Marking FLs

42t sot-23

Contextual Info: SIEMENS PNP Silicon High-Voltage Transistors BFN 25 BFN 27 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low coliector-emitter saturation voltage • Complementary types: BFN 24, BFN 26 NPN Type

Contextual Info: BFN27 PNP Silicon High-Voltage Transistors • Suitable for video output stages in TV sets 2 3 and switching power supplies 1 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN26 NPN • Pb-free (RoHS compliant) package

BCW66

Abstract: BFN26 BFN27
Contextual Info: BFN27 PNP Silicon High-Voltage Transistors • Suitable for video output stages in TV sets 2 3 and switching power supplies 1 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN26 NPN • Pb-free (RoHS compliant) package 1)

BCW69

Abstract: BCW70 IEC134 ScansUX40
Contextual Info: ?110fl2fcj OQbflSH? 0^5 H P H I N BCW69 BCW70 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a microminiature plastic envelope, intended for low level general purpose appli­ cations in thick and thin-film circuits. Q U IC K R E F E R E N C E D A T A

a7p marking

Abstract: marking A7p sot23 a7p
Contextual Info: BAV99 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAV99 consists of tw o diodes in a m icrom iniature plastic envelope. The diodes are connected in series and the u n it is intended fo r high-speed switching in thick and th in -film circuits.

Contextual Info: 32E D m Ô23b320 OGlb^flS S WÊ SIP NPN Silicon RF Transistor SIEMENS/ SP C Li SEMICONDS BFR35AP _ • For broadband amplifiers up to 2 GHz and fast non­ saturated switches at collector currents from 0.5 to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!

78l03

Abstract: S M R750 quartz fl 9014 smd 2SC 8550 3SK35 AT93C56SC 2SK2335 SMD CODE PACKAGE SOT25 st smd diode marking code VU THU 1203
Contextual Info: CHIP SOLID TANTALUM CAPACITOR a. f r a * * 016 iW íD M fé R - 1 A,S m jz m m KE M E T/S PR A G E/N EC ta rn s * CA45 + HH*4SHt S S JIM V D C m % * ìi R5Bf L i W H 0.2 0.2 0.1 0.1 w. /v 6V : ov 16V POV ?f V 35V X4 ZZ'b 010 016 020 025 03b C J A C :• e

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

ctc 880 transistor pins

Abstract: 1F01B diagram remote control receiver and transmitter SC68C94 SC68C94A1A SC68C94A1N SC68C94C1A SC68C94C1N MOTOROLA DATE CODE transistor TXC 40MHz oscillator
Contextual Info: INTEGRATED CIRCUITS SC68C94 Quad universal asynchronous receiver/ transmitter QUART Product specification IC19 1995 May 1 Philips Semiconductors PHILIPS PHILIPS T l l ü ô E b O G T O D Ô S fibfl Philips Semiconductors Product specification Quad universal asynchronous receiver/transmitter (QUART)

isl 6251 schematic

Abstract: smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs
Contextual Info: SIEMENS Halbleiter-Datenblätter Im Produktbereich „Halbleiter“ konnten uns leider von SIEMENS nicht alle Daten rechtzeitig zur Verfügung gestellt werden. Wir werden uns bemühen, die Auswahl an Datenblättern dieses Bereichs für die nächste Ausgabe dieser CD zu vervollständigen.

dallas ds80c320 high speed micro guide

Abstract: transistor bf 175 DS1640
Contextual Info: TABLE OF CONTENTS Short-Form Catalog T im e kee pin g . 1 M emory P ro d u

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not