FLM2 Search Results

FLM2023L-30F

Abstract: EUDYNA flm2023l-30f ED-4701 26dBm
Contextual Info: FLM2023L-30F L-Band Internally Matched FET FEATURES ・High Output Power: P1dB=45.0dBm Typ. ・High Gain: G1dB=13.0dB(Typ.) ・High PAE: ηadd=43%(Typ.) ・Broad Band: 2.025~2.285GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION

FLM5359-8C

Abstract: FUJITSU MICROWAVE
Contextual Info: INTERNALLY MATCHED POW ER G aAs FETs C-BAND Electrical Characteristics (Ta = 2S°C) P id B TYP. (dB) G-lcfB TYP. (dB) nadd TYP. (dB) f (GHz) Vos (V) FLM2527L-20 42.5 11.0 34 2 . 5 - 2.7 FLM3742-4C 36 12.0 34 FLM3742-8C 39 11.0 FLM4450-4C 36 FLM4450-8C (rnA)

LM2527

Abstract: SO 042
Contextual Info: FLM252 7L-20 Internally Matched Power GaAs F E l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Rem Symbol Condition Rating Unit Drain-Source Voltage vds 15 V Gate-Source Voltage vgs -5 V 83.3 w °c °c Total Power Dissipation Tc = 25°C pt Storage Temperature

fujitsu x band amplifiers

Contextual Info: FLM2527L-20 FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 42.5dBm Typ. High Gain: G ^ b = 11 dB (Typ.) High PAE: riadd = 34% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package

Contextual Info: FLM2527L-20F - L-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 43.0dBm Typ. • • • • • High Gain: G-|dB = 11 0clB (TyP) High PAE: r!add = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz

fujitsu x band amplifiers

Contextual Info: FLM2527L-20F L-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: hadd = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package

FLM2023L-30F

Contextual Info: FLM2023L-30F L-Band Internally Matched FET FEATURES • High Output Power: P1dB=45.0dBm Typ. • High Gain: G1dB=13.0dB(Typ.) • High PAE: hadd=43%(Typ.) • Broad Band: 2.025 to 2.285GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package

Contextual Info: FLM2527L-20F L-Band Internally Matched FET FEATURES • High Output Power: P1dB = 43.0dBm Typ. • High Gain: G1dB = 11.0dB (Typ.) • High PAE: hadd = 38% (Typ.) • Broad Band: 2.5 to 2.7GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package

FLM2527L-20F

Abstract: Eudyna Devices power amplifiers Eudyna Devices X BAND power amplifiers
Contextual Info: FLM2527L-20F L-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package

Contextual Info: FLM2527L-20 fujTtsu Internally M a tc h e d P o w e r G a A s F E T s FEATURES • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 11dB (Typ.) High PAE: riar|H = 34% (Typ.) Broad Band^2.5 - 2.7GHz Impedance Matched Zin/Zout = 50Q

fujitsu x band amplifiers

Abstract: FLM2527L-20F
Contextual Info: FLM2527L-20F L-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package

Eudyna Devices X BAND power amplifiers

Abstract: FLM2527L-20F
Contextual Info: FLM2527L-20F L-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package

m24lr64

Abstract: 15693 eeprom M24LR64-RMB6T/2
Contextual Info: Dual interface EEPROM M24LR64, I²C and IS0 15693, 64-Kbit EEPROM with password protection The M24LR64 is an electrically-erasable memory EEPROM that can be accessed either from a wired I²C interface, or from an industry-standard RF interface which does not

Contextual Info: Ordering number : ENA1186 LC749880T CMOS IC Silicon gate Image controller LSI for LCD-TV http://onsemi.com Overview LC749880T is an LSI to display the converted NTSC/PAL analog video signals in the liquid crystal panel of maximum VGA size. This product performs A/D conversion, YC separation, color decoding, IP conversion, resolution conversion, and

LC749402BG

Contextual Info: Ordering number : ENA1618 CMOS IC LC749402BG Silicon gate LCD Picture Quality Improvement IC Overview LC749402BG is a picture quality improvement IC that processes the output signals to the LCD panel for high picture quality display. This IC performs various picture quality adjustments to provide the ideal correction for the display panel.

Y106

Abstract: Y160 200-0372 Y155Y156
Contextual Info: ST8016S COM/SEG LCD Driver Datasheet Version 0.24 2009/10/01 Note: This is not a final specification. Some parameters are subject to change. ST8016S 1. FEATURES Number of LCD drive outputs: 160 Supply voltage for LCD drive: +15.0 to +30.0 V Supply voltage for the logic system: +2.5 to +5.5 V

Contextual Info: User's Manual 32 R32C/153 Group User’s Manual: Hardware R32C/153 Group User’s Manual: Hardware RENESAS MCU M16C Family / R32C/100 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

pin configuration NPN transistor c828

Abstract: w32 smd transistor aa26 fairchild smd transistor w32 speedtech p65 GMT795 foxconn npn transistor w16 SMI TSOP 48pin c427 diode
Contextual Info: 5 4 3 2 1 First International Computer,Inc Protable Computer Group HW Department D D Board name : Mother Board Schematic 1. Schematic Page Description : Project : AT11 2. PCI & IRQ & DMA Description : Version : 0.2 3. Block Diagram : 4. Nat name Description :

HD66772

Abstract: HD66775 150 g25 capacitor BY176 cl11 capacitor
Contextual Info: To all our customers Information regarding change of names mentioned within this document, to Renesas Technology Corp. On April 1st 2003 the following semiconductor operations were transferred to Renesas Technology Corporation: operations covering microcomputer, logic,

LV1116

Abstract: VP07 vp35 tcon 102 VP08 TLO 81 AVSS33 VP01 Tcon 8.9 f A1186
Contextual Info: 注文コード No. N A 1 1 8 6 CMOS LSI LC749880T シリコンゲート LCD-TV 用イメージコントローラ LSI 概要 LC749880T はNTSC/PAL のアナログビデオ信号を、VGA までの液晶パネルに、変換表示するための LSI である。A/D 変換・YC 分離・カラーデコード・IP 変換・解像度変換・各種画質補正を行ってい

M24LR64

Abstract: 13,56 MHz RFID antenna M24LR
Contextual Info: Dual interface 64-Kbit EEPROM Memory filling reinvented I2C and ISO/IEC 15693 The M24LR64 is an electrically-erasable memory EEPROM that can also be programmed wirelessly using industrystandard RFID (radio-frequency ID) equipment. Using the M24LR64 for program or data storage provides

IR P103s

Abstract: 4005A
Contextual Info: User's Manual 32 R32C/153 Group User's Manual: Hardware R32C/153 Group User’s Manual: Hardware RENESAS MCU M16C Family / R32C/100 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by Renesas Electronics

DSAI 130A

Abstract: 2224 sr GFIJ ANI 1015
Contextual Info: User's Manual 32 R32C/142 Group and R32C/145 Group User's Manual: Hardware R32C/142 Group and R32C/145 Group User’s Manual: Hardware RENESAS MCU M16C Family / R32C/100 Series All information contained in these materials, including products and product specifications, represents

f 7732

Abstract: A8140
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid