FGH30 Search Results

30N6S2D

Contextual Info: FGH30N6S2D / FGP30N6S2D / FGB30N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs

Contextual Info: FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat = 1.6V @ IC = 30A • High input impedance Using advanced field stop trench technology, Fairchild’s 1200V

FGH30S130P

Abstract: fgh30s FGH30 CO120 FGH3
Contextual Info: FGH30S130P Shorted AnodeTM IGBT Features General Description • High speed switching Using advanced Field Stop Trench and Shorted Anode technology, Fairchild’s Shorted AnodeTM Trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche capability. This device is

30n6s2d

Abstract: TA49336 FGB30N6S2D FGH30N6S2D FGP30N6S2D
Contextual Info: FGH30N6S2D / FGP30N6S2D / FGB30N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs

welder inverter 160 dc

Abstract: welder mosfet igbt welder FGH30N60LSD FGH30N60LSDTU
Contextual Info: FGH30N60LSD tm Features General Description • Low saturation voltage: VCE sat =1.1V @ IC = 30A The FGH30N60LSD is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.This device has the high input impedance of a

Contextual Info: FGH30N60LSD tm Features General Description The FGH30N60LSD is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

design ups inverter

Abstract: 247A03
Contextual Info: FGH30N60LSD 600 V, 30 A PT IGBT Features General Description • Low Saturation Voltage: VCE sat = 1.1 V @ IC = 30 A Using Fairchild 's advanced PT technology, the FGA30N60LSD IGBT offers superior conduction performances, which offer the optimum performance for medium switching application such as

30N6S2

Abstract: FGB30N6S2 FGB30N6S2T FGH30N6S2 FGP30N6S2 FGP30N6S2D 1108a
Contextual Info: FGH30N6S2 / FGP30N6S2 / FGB30N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with

FGH30N60LSDTU

Abstract: FGH30N60LSD mosfet 600V 30A
Contextual Info: FGH30N60LSD tm Features General Description • Low saturation voltage: VCE sat =1.1V @ IC = 30A The FGH30N60LSD is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.This device has the high input impedance of a

600v 30a IGBT

Abstract: FGH30N120FTD FGH30N120FTDTU IGBT 1200V 60A IGBT 200A 1200V application induction heating IGBT 60A 1200V HIGH VOLTAGE DIODE for microwave ovens igbt 600V 30A datasheet I36 MARKING igbt for HIGH POWER induction heating
Contextual Info: FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche

Contextual Info: FGH30T65UPDT_F155 650V, 30A Field Stop Trench IGBT Features • Maximum Junction Temperature : TJ = 175oC General Description • Positive Temperaure Co-efficient for Easy Parallel Operating Using novel field stop trench IGBT technology, Fairchild ’s new

fgh30s

Contextual Info: FGH30S130P 1300 V, 30 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching

Contextual Info: FGH30N60LSD 600 V, 30 A PT IGBT Features General Description • Low Saturation Voltage: VCE sat = 1.1 V @ IC = 30 A Using Fairchild's advanced PT technology, the FGA30N60LSD IGBT offers superior conduction performances, which offer the optimum performance for medium switching application such as

Contextual Info: FGH30N6S2 / FGP30N6S2 / FGB30N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with

Contextual Info: FGH30T65UPDT 650V, 30A Field Stop Trench IGBT Features • Maximum Junction Temperature : TJ = 175oC General Description • Positive Temperaure Co-efficient for Easy Parallel Operating Using novel field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance

Contextual Info: FGH30S130P 1300 V, 30 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild ’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching

Contextual Info: FGH30N6S2 / FGP30N6S2 / FGB30N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with

FGH30S130P

Abstract: marking MJ
Contextual Info: FGH30S130P Shorted AnodeTM IGBT Features General Description • High speed switching Using advanced Field Stop Trench and Shorted Anode technology, Fairchild’s Shorted AnodeTM Trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche capability. This device is

STR-G6551

Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision

Contextual Info: FGA30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat = 1.6V @ IC = 30A • High input impedance Using advanced field stop trench technology, Fairchild’s 1200V

fga30n120

Abstract: FGH30N120FT
Contextual Info: FGA30N120FTD 1200 V, 30 A Field Stop Trench IGBT Features • Field Stop Trench Technology General Description • High Speed Switching Using advanced field stop trench IGBT technology, Fairchild ’s 1200V trench IGBTs offer the optimum performance for hard

INDUCTION HEATING

Abstract: induction heating ic high power Induction Heating FGK60N6S2D HGT1S12N60C3S SGS5N150UF HGT1S5N120BNDS SGS13N60UFD SGH10N120RUF HGT1N30N60A4D
Contextual Info: Discrete Discrete IGBTs BVCES Min V IC@100°C (A) VCE(sat) Typ (V) tf Typ (ns) Short Circuit Rated Built-in Diode 400 130 4.5 1500 No No Camera Strobe HGT1N30N60A4D 600 60 1.8 38 No Yes Power Conversion (SMPS Series) HGT1N40N60A4D 600 63 1.7 35 No Yes Power Conversion (SMPS Series)

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™