1108A Search Results

Contextual Info: 1102A 1104A 1106A 1108A 1110A SINGLE PHASE BRIDGE 70nS*150nS*3000nS RECOVERY V rwM = IE = 1102FA 1104FA 1106FA 1108FA 1110FA 1102UFA 1104UFA 1106UFA 1108UFA 1110UFA Assemblies available with JAN, JANTX, or JA N TXV discrete diodes. Consult sales office. 2 0 0 -1 0 0 0 V

1108a

Abstract: TCXO
Contextual Info: Data Sheet 1108A CRYSTAL OSCILLATORS AN-XA32CXXX-X Series HF SMD TCXO/VCTCXO Ultra Low Phase Noise Rev. A Description: The AN-XA32CXXX Series of SMD temperature compensated crystal oscillators TCXO/VCTCXO , provides High Frequency with excellent temperature stability,

Hitachi DSA0076

Abstract: 2SC4462
Contextual Info: 2SC4462 Silicon NPN Epitaxial ADE-208-1108A Z 2nd. Edition Mar. 2001 Application UHF frequency converter Outline CMPAK 3 1 2 Note: Marking is “EC”. 1. Emitter 2. Base 3. Collector 2SC4462 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit

Hitachi DSA002751

Contextual Info: HN58X2408I/HN58X2416I HN58X2432I/HN58X2464I Two-wire serial interface 8k EEPROM 1-kword x 8-bit /16k EEPROM (2-kword × 8-bit) 32k EEPROM (4-kword × 8-bit)/64k EEPROM(8-kword × 8-bit) ADE-203-1108A (Z) Rev. 1.0 Aug. 26, 1999 Description HN58X24xxI series are two-wire serial interface EEPROM (Electrically Erasable and Programmable

Contextual Info: Data Sheet 1108A CRYSTAL OSCILLATORS AN-XA32CXX-X Series HF SMD TCXO Ultra Low Phase Noise Rev. - Description: The AN-XA32CXX Series of SMD temperature compensated crystal oscillators TCXO , provides High Frequency with excellent temperature stability, extremely

Contextual Info: HN58X2408I/HN58X2416I HN58X2432I/HN58X2464I Two-wire serial interface 8k EEPROM 1-kword x 8-bit /16k EEPROM (2-kword x 8-bit) 32k EEPROM (4-kword x 8-bit)/64k EEPROM(8-kword x 8-bit) HITACHI ADE-203-1108A (Z) Rev. 1.0 Aug. 26, 1999 Description HN58X24xxI series are two-wire serial interface EEPROM (Electrically Erasable and Programmable

1102FA

Abstract: 1102UFA 1104FA 1104UFA 1106FA 1106UFA 1108FA 1108UFA 1110FA 1110UFA
Contextual Info: tiBE D • ^ 5 1 4 0 5 4 Q G G G M Û b lôl ■■ V H I 1102A 1104A 1106A 1108A 1110A SINGLE PHASE BRIDGE 70nS»150nS*3000nS RECOVERY V RWM D„„. IF = = 2 0 0 -1000V 1.4 - 1.5A 1102FA 1104FA 1106FA 1108FA 1110FA 1102UFA 1104UFA 1106UFA 1108UFA 1110UFA

Contextual Info: 1108A Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current1.5 @Temp (øC) (Test Condition)55 V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)1

x80S

Contextual Info: SONY. 1108AQ-L/AQ-Y Laser Driver D e s crip tio n The C XB 1108A Q -L/A Q -Y is an ultra high speed monolithic Laser Driver/Current Switch Circuit with ECL input level. Open collector output is provided a t the output pin and has a capability of driving modulation current of

ALLEN-BRADLEY RESISTOR network

Abstract: ALLEN-BRADLEY RESISTOR ALLEN-BRADLEY RESISTOR NETWORKS Allen-Bradley resistors ALLEN-BRADLEY RESISTOR array ALLEN-BRADLEY RESISTOR temperature 270 ALLEN-BRADLEY RESISTOR temperature marking 206a 408A103 EC5410-4
Contextual Info: TCKÌiir I N T L / E L E K ' V, u o d CNPNT »I V KKWL I N T L / fl?I> D | 7A1D7S3 OODDflll 2 | ELÉK CMPNT DI V 87D 0 0 8 1 1 • ic S 'O S D % Series 100, 1 , 200 400 Cermet Resistor Networks I-SIP Single In-Line Package FEATURES _ Solid Ceramic Body, with V-Groove

CEE 32A plug

Abstract: CEE 16 AMP PLUG 5608AA Mennekes 3658 STARTOP 33 1192ZA 5605aa 7011AA 5792A CEE 32A
Contextual Info: Plugs for the world UK / IRL 2 International approvals. MENNEKES plugs and receptacles conform to relevant in other countries, in particular countries whose national and international standards. Plugs and national test marks are given below. Due to special

BF195 equivalent

Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products

mepco capacitor

Abstract: MEPCO mepco RESISTOR RCL 7010 DALE SOMC1603 toko rcl Toko inductor RCL somc1603 RC02HP pr01 piher
Contextual Info: Cross Reference - RCD Components Vendor RCD part# Description MIL TYPE ALLEN BRADLEY: 706A CL061 Conformal coated SIP networks CL-C-FA032 ALLEN BRADLEY: 706B CL062 Conformal coated SIP networks CL-C-FA032 ALLEN BRADLEY: 706E CL063 Conformal coated SIP networks

EDE1108ACSE

Abstract: EDE1116ACSE
Contextual Info: PRELIMINARY DATA SHEET 1G bits DDR2 SDRAM EDE1104ACSE 256M words x 4 bits 1108ACSE (128M words × 8 bits) EDE1116ACSE (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization ⎯ 32M words × 4 bits × 8 banks (EDE1104ACSE)

EDE1116ACBG_8E_E

Abstract: EDE1116ACBG EDE1108ACBG EDE1116ACBG-8E-E 1108A EDE1116ACBG-8E EDE1116AC
Contextual Info: DATA SHEET 1G bits DDR2 SDRAM EDE1104ACBG 256M words x 4 bits 1108ACBG (128M words × 8 bits) EDE1116ACBG (64M words × 16 bits) Features • Density: 1G bits • Organization  32M words × 4 bits × 8 banks (EDE1104ACBG)  16M words × 8 bits × 8 banks (1108ACBG)

Device Name 23 330 A1 6C

Abstract: EMRS-2 EDE1104ABSE MARK 8E diode EDE1104ABSE-8E-E EDE1108ABSE EDE1116ABSE
Contextual Info: PRELIMINARY DATA SHEET 1G bits DDR2 SDRAM EDE1104ABSE 256M words x 4 bits 1108ABSE (128M words × 8 bits) EDE1116ABSE (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization  32M words × 4 bits × 8 banks (EDE1104ABSE)

Contextual Info: AN ALO G DEVICES Micropower DC-DC Converter Adjustable and Fixed 3.3 V, 5 V, 12 V ADP1108 FEATURES Operates at Supply Voltages From 2.0 V to 30 V Consumes Only 110 p.A Supply Current Step-Up or Step-Down Mode Operation Minimum External Components Required

EDE1108ACSE

Abstract: EDE1116ACSE
Contextual Info: DATA SHEET 1G bits DDR2 SDRAM EDE1104ACSE 256M words x 4 bits 1108ACSE (128M words × 8 bits) EDE1116ACSE (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization ⎯ 32M words × 4 bits × 8 banks (EDE1104ACSE) ⎯ 16M words × 8 bits × 8 banks (1108ACSE)

optocoupler 450

Abstract: OPTOCOUPLER dc optocoupler IL SL5505S
Contextual Info: P H ILIP S 41E INTERNATIONAL D 711002 3 0Q3GS3b 1 7 1 Philips Sem iconductors y / - g IPHIN j P ro d u ct sp ecification SL5505S High-speed optocoupler FEATURES • Short propagation delay times • Low saturation voltage • High transient immunity • High degree of AC and DC

Contextual Info: PRELIMINARY DATA SHEET 1G bits DDR2 SDRAM EDE1104ACSE 256M words x 4 bits 1108ACSE (128M words × 8 bits) EDE1116ACSE (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization ⎯ 32M words × 4 bits × 8 banks (EDE1104ACSE)

EDE1108ABSE-6E

Contextual Info: DATA SHEET 1G bits DDR2 SDRAM EDE1104ABSE 256M words x 4 bits 1108ABSE (128M words × 8 bits) EDE1116ABSE (64M words × 16 bits) Features • Density: 1G bits • Organization  32M words × 4 bits × 8 banks (EDE1104ABSE)  16M words × 8 bits × 8 banks (1108ABSE)

EDE1108ABSE-6E-E

Contextual Info: PRELIMINARY DATA SHEET 1G bits DDR2 SDRAM EDE1104ABSE 256M words x 4 bits 1108ABSE (128M words × 8 bits) EDE1116ABSE (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization  32M words × 4 bits × 8 banks (EDE1104ABSE)

Gate Turn-off Thyristor 100V 1000A

Contextual Info: Y50KAD HIGH FREQUENCY THYRISTOR Features： Interdigitated amplifying gates Fast turn-on and high di/dt n Low switching losses n Short turn-off time n Hermetic metal cases with ceramic insulators Typical Applications n Inductive heating n Electronic welders

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle