FETB Search Results

SN74CBTD3861

Abstract: A7817 ix35 IX-35
Contextual Info: SN74CBTD3861 10-BIT FETBUS SWITCH WITH LEVEL SHIFTING S C D S 084A - JU LY 1 998 - REVISED O C TO B ER 1998 TTL-Compatible Input Levels Designed to Be Used in Level-Shifting Applications • NC [ 1 A3 [ 4 ] V CC 23 ] OE 22 ] B1 21 ] B2 A4 [ 5 20 ] B3 A5 [ 6

7528A

Contextual Info: m INDICATES OHHM L OATACCMTADCQ IN THIS OD O te fT IS PROPRIETARY TE TR D fETB &£CT1KMICS INC. »tO SHALL WT BE QISOXBH}, CXPIHS tS USB r k m m o e i T oe n a m f a c t ije w t x u t d im c » m i t t » p b m is s ig n . REV P DASH NO CABLES ACCOMMODATED

Contextual Info: SN55563A, SN55564A ELECTROLUMINESCENT ROW DRIVERS D 3 3 1 3 , OCTOBER 1 9 8 9 S N 55S63A . . . FJ PACKAGE • Each Device Drives 34 Electrodes • Selectable Open-Source or Open-Drain Output • Outputs Rated at 225 V • Output Current Capability: - 9 0 mA to 150 mA

Contextual Info: bq2945 Gas Gauge IC with SMBus Interface Features General Description ➤ Provides accurate measurement of available charge in NiCd, NiMH, and Li-Ion batteries The bq2945 Gas Gauge IC With SMBus Interface is intended for battery-pack or in-system installation to maintain an accurate record

3006S

Abstract: 10-6327-01
Contextual Info: N-Channel Dual CoolTM Power Trench SyncFETTM 30 V, 49 A, 1.9 mΩ Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench®

FCH76N60

Contextual Info: SupreMOS TM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based

fqt1n80

Contextual Info: QFET FQT1N80TF_WS N-Channel MOSFET 800V, 0.2A, 20Ω Features Description • RDS on = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FDA20

Abstract: *20N50F
Contextual Info: UniFET TM FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET Features Description • 22A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: FDMA8878 Single N-Channel Power Trench MOSFET 30 V, 9.0 A, 16 mΩ Features General Description „ Max rDS on = 16 mΩ at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has

driver injectors

Abstract: high side gate driver GTO FAN7083
Contextual Info: FAN7083_GF085 High Side Gate Driver with Reset Features Description • Qualified to AEC Q100 The FAN7083_GF085 is a high-side gate drive IC with reset input. It is designed for high voltage and high speed driving of MOSFET or IGBT, which operates up to 600V. Fairchild's highvoltage process and common-mode noise cancellation technique provide stable operation in the high side driver under

FDPF4N60NZ

Contextual Info: UniFET-IITM FDP4N60NZ / FDPF4N60NZ N-Channel MOSFET 600V, 3.8A, 2.5Ω Features • RDS on = 1.9Ω ( Typ.)@ VGS = 10V, ID = 1.9A Description • Low Gate Charge ( Typ. 8.3nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

Contextual Info: SUF-4000 0.15GHz to 10GHz, Cascadable pHEMT MMIC Amplifier SUF-4000 Proposed 0.15GHz to 10GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: 0.88mmx0.80mm Product Description Features RFMD’s SUF-4000 is a monolithically matched broadband high IP3 gain block covering 0.15GHz to 10GHz. This pHEMT FET-based amplifier uses

Contextual Info: FAN7093_F085 High Current PN Half Bridge December 2011 FAN7093_F085 High Current PN Half Bridge Rectifier 47 A, Max path resistance 30.5 mΩ at 150 °C 2011 Fairchild Semiconductor Corporation FAN7093_F085 Rev. C1 1 www.fairchildsemi.com FAN7093_F085 High Current PN Half Bridge

Contextual Info: DB3-DB3TG 350mW Bi-directional Trigger Diodes Features • • • • • • • • • • VBO : 32V Version Low break-over current DO-35 package JEDEC Hermetically sealed glass Compression bonded construction All external surfaces are corrosion resistant and

Contextual Info: FDB070AN06A0 / FDP070AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications • r DS ON = 6.1mΩ (Typ.), V GS = 10V, ID = 80A • Motor Load Control • Qg(tot) = 51nC (Typ.), VGS = 10V • DC-DC converters and Off-line UPS • Low Miller Charge

TAG 8926

Abstract: Lpg 899 SDC 2921 TF 6221 HEN LED display 12V+RELAY+1+C/8 pin ic sdc 3733
Contextual Info: MCIMX31 and MCIMX31L Multimedia Applications Processors Reference Manual MCIMX31RM Rev. 1 2/2006 How to Reach Us: USA/Europe/Locations Not Listed: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1-800-521-6274 or 480-768-2130

SUF-5033

Abstract: suf 5033
Contextual Info: SUF-5033 SUF-5033Low Noise, High Gain SiGe HBT 0.1 GHZ TO 4.0 GHZ, CASCADABLE PHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features The SUF-5033 is a monolithically matched broadband high IP3 gain block covering 0.1 GHz to 4.0 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from a single 5 V supply. It

Contextual Info: GBPC 12, 15, 25, 35 SERIES Bridge Rectifiers Glass Passivated Features • • • • Integrally molded heatsink provided very low thermal resistance for maximum heat dissipation. Surge Overload Ratings from 300 amperes to 400 amperes. Isolated voltage from case to lead over 2500 volts.

EV2200-40

Abstract: PCB design layout of gas leakage alarm
Contextual Info: bq2040 Gas Gauge IC With SMBus Interface Features General Description ➤ Provides accurate measurement of available charge in NiCd, NiMH, and Li-Ion batteries The bq2040 Gas Gauge IC With SMBus Interface is intended for battery-pack or in-system installation to maintain an accurate record

LXJ nippon

Abstract: NIPPON CAPACITORS
Contextual Info: Ì f NIPPON ¡aiEMhCOWl MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS •L o w im pedance • Endurance with ripple current: 105“C 2 00 0 to 5 000 hours •S o lv e n t-p ro o f type, see page 16 ♦SPECIFICATIONS Item s C h a ra c te ris tic s Category Temperature Range

Contextual Info: FDPF035N06B N-Channel PowerTrench MOSFET 60 V, 88 A, 3.5 mΩ Features Description • RDS on = 2.91 mΩ ( Typ.) @ VGS = 10 V, ID = 88 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

Contextual Info: bq2945 Gas Gauge IC with SMBus Interface Features General Description ➤ Provides accurate measurement of available charge in NiCd, NiMH, and Li-Ion batteries The bq2945 Gas Gauge IC With SMBus Interface is intended for battery-pack or in-system installation to maintain an accurate record

FDD86

Contextual Info: FDD86113LZ N-Channel PowerTrench MOSFET 100 V, 5.5 A, 104 mΩ Features General Description „ Max rDS on = 104 mΩ at VGS = 10 V, ID = 4.2 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process

MO-240

Abstract: 10dc rectifier
Contextual Info: N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 mΩ Features General Description „ SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have