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    FDD86113LZ Search Results

    FDD86113LZ Datasheets (1)

    Fairchild Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDD86113LZ
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 4.2A DPAK-3 Original PDF 6
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    FDD86113LZ Price and Stock

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    UMW FDD86113LZ

    MOSFET N-CH 100V 4.2A/5.5A DPAK
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    DigiKey () FDD86113LZ Digi-Reel 2,250 1
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    FDD86113LZ Tape & Reel 2,250 2,500
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    onsemi FDD86113LZ

    - Tape and Reel (Alt: FDD86113LZ)
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    FDD86113LZ Tape & Reel 56 Weeks 2,500
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    Mouser Electronics FDD86113LZ 5,390
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    Newark () FDD86113LZ Tape & Reel 1,799 100
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    Fairchild Semiconductor Corporation FDD86113LZ

    Trans MOSFET N-CH Si 100V 4.2A 3-Pin(2+Tab) DPAK T/R
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    Bristol Electronics FDD86113LZ 1,298 1
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    Quest Components () FDD86113LZ 1,038
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    FDD86113LZ 1,038
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    ComSIT USA FDD86113LZ 2,500
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    FDD86113LZ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDD86

    Contextual Info: FDD86113LZ N-Channel PowerTrench MOSFET 100 V, 5.5 A, 104 mΩ Features General Description „ Max rDS on = 104 mΩ at VGS = 10 V, ID = 4.2 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process


    Original     		FDD86113LZ FDD86113LZ FDD86 PDF

    Contextual Info: FDD86113LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 5.5 A, 104 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has


    Original     		FDD86113LZ PDF

    Contextual Info: FDD86113LZ N-Channel PowerTrench MOSFET 100 V, 5.5 A, 104 mΩ Features General Description ̈ Max rDS on = 104 mΩ at VGS = 10 V, ID = 4.2 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process


    Original     		FDD86113LZ PDF