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    FET SOT89 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SMD CODE MARKING s7 SOT23

    Abstract: PMBFJ111 PMBFJ174 BSR56 BFT46
    Contextual Info: SMD FET’s DESCRIPTION • Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capacitance, negligible inductance, and reduced board assembly cost. The three categories of FET’s each have its own attributes


    OCR Scan     		applicat174pmbfj175pmbfj176pmbfj177+9ot-23ot-89ot-143ot-223smd code marking s7 sot23pmbfj111pmbfj174bsr56bft46 PDF

    2SK2973

    Abstract: 165082 mf 102 fet equivalent hd 9729 transistor t 2190 GR40-220 ic 7448 marking c7 sot-89 75458 88284
    Contextual Info: MITSUBISHI RF POWER MOS FET 2SK2973 SILICON MOS FET TYPE DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. FEATURES * High power gain:Gpe>13dB « VDD=9.6V,f=450MHz,Pin= 17dBm * High efficiency:55% typ.


    OCR Scan     		2sk2973450mhz17dbmot-89+10conditi38165082mf 102 fet equivalenthd 9729transistor t 2190gr40-220ic 7448marking c7 sot-897545888284 PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		rej16g0001-1900rjp3053rjp3063rjp6065+7rjp2557rjp3057rjh30rqj0301rjp3065rjk5020rjk2009 PDF

    hd 9729

    Abstract: 2SK2973 45980 78268 75458 75182 0L sot-89 944 SOT-89
    Contextual Info: MITSUBISHI RF POWER MOS FET 2SK2973 SILICON MOS FET TYPE DESCRIPTION 2SK2973 ¡s a MOS FET type transistor specifically designed for OUTLINE DRAWING Dimensions in mm VHF/UHF power amplifiers applications. 1.5±0.1 FEATURES • High power gain:Gpe^13dB @ VDD-9.6V ,f"450MHz, Pin=17dBm


    OCR Scan     		2sk2973450mhz17dbmot-89+7hd 9729459807826875458751820l sot-89944 sot-89 PDF

    sot89-3

    Contextual Info: MOS FET P-CHANNEL POWER MOS FET FOR SWITCHING The S-90P series is a P-channel power MOS FET that realizes low on-resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set and energy saving. A gate protection


    Original     		s-90pot-23-3ot-89-3s-90p0112sma+3s-90p0222suas-90p0332suasot89-3 PDF

    90n0212sma

    Abstract: SOT233
    Contextual Info: MOS FET N-CHANNEL POWER MOS FET FOR SWITCHING The S-90N series is an N-channel power MOS FET that realizes a low on-resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set and energy saving. A gate


    Original     		s-90not-23-3ot-89-3s-90n0113sma+5s-90n0133suas-90n0212smas-90n0232sua90n0212smasot233 PDF

    XP161A02A1PR

    Contextual Info: XP161A02A1PR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.11Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP161A02A1PR is a N-Channel Power MOS FET with low on-state


    Original     		xp161a02a1prot-89 PDF

    m8p smd

    Abstract: sot-23 MARKING CODE 70.2 fet SMD CODE PACKAGE SOT23 sot-23 MARKING CODE GS PMBF310 Philips fet SOT23 code marking M2P smd marking code MHP smd sot-23 MARKING CODE GS 5 marking 702 sot-23
    Contextual Info: 11 SMD F E T ’s SMD® FET’s Description Features Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capaci­ tance, negligible inductance, and reduced board assembly cost. The three categories of FET’s each have its own


    OCR Scan     		ot-23ot-89ot-143ot-223+11ot-69m8p smdsot-23 marking code 70.2fet smd code package sot23sot-23 marking code gspmbf310philips fet sot23 code markingm2p smdmarking code mhp smdsot-23 marking code gs 5marking 702 sot-23 PDF

    XP161A01A8PR

    Contextual Info: XP161A01A8PR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.18Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP161A01A8PR is a N-Channel Power MOS FET with low on-state


    Original     		xp161a01a8prot-89 PDF

    8A SOT-89

    Abstract: XP162A02D5PR
    Contextual Info: XP162A02D5PR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.45Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP162A02D5PR is a P-Channel Power MOS FET with low on-state


    Original     		xp162a02d5prot-898a sot-89 PDF

    XP162A02D5PR

    Abstract: XP162A11C0PR XP162A12A6PR sot89 fet XP162A11
    Contextual Info: XP162A02D5PR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.45Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP162A02D5PR is a P-Channel Power MOS FET with low on-state


    Original     		xp162a02d5prot-89xp162a11c0prxp162a12a6pr+2sot89 fetxp162a11 PDF

    XP161A0390PR

    Contextual Info: XP161A0390PR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.09Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP161A0390PR is a N-Channel Power MOS FET with low on-state


    Original     		xp161a0390prot-89 PDF

    XP162A01B5PR

    Contextual Info: XP162A01B5PR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.25Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP162A01B5PR is a P-Channel Power MOS FET with low on-state


    Original     		xp162a01b5prot-89 PDF

    NE5500234

    Abstract: nec RF package SOT89 nec 2501 marking v2 FRS transceiver NE5500234-T1-AZ
    Contextual Info: DATA SHEET SILICON POWER MOS FET NE5500234 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS DESCRIPTION The NE5500234 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for DCS1800 and PCS1900 handsets. Dies are manufactured using our NEWMOS technology our 0.6 m WSi gate


    Original     		ne5500234dcs1800/pcs1900dcs1800pcs1900+6ot-89nec rf package sot89nec 2501marking v2frs transceiverne5500234-t1-az PDF

    nec 2501

    Abstract: nec RF package SOT89 NE5500134 nec marking power amplifier NEC MARKING CODE code marking NEC date code marking NEC FET SOT-89 N-Channel HS350 sot89 fet
    Contextual Info: DATA SHEET SILICON POWER MOS FET NE5500134 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR 0.8 TO 2.0 GHz CELLULAR HANDSETS DESCRIPTION The NE5500134 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 0.8 to 2.0 GHz cellular handsets. Dies are manufactured using our NEWMOS technology our 0.6 m WSi gate


    Original     		ne5500134ot-89nec 2501nec rf package sot89+7nec marking power amplifiernec marking codecode marking necdate code marking necfet sot-89 n-channelhs350sot89 fet PDF

    NE5500434

    Abstract: nec RF package SOT89 nec 2501
    Contextual Info: DATA SHEET SILICON POWER MOS FET NE5500434 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR GSM CLASS 4 HANDSETS DESCRIPTION The NE5500434 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for GSM class 4 handsets. Dies are manufactured using our NEWMOS technology our 0.6 m WSi gate lateral MOS


    Original     		ne5500434ot-89nec rf package sot89nec 2501 PDF

    XP161A11A1PR

    Abstract: sot 89 MOS FET
    Contextual Info: XP161A11A1PR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.105Ω MAX ◆ Gate Protect Diode Built-in ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP161A11A1PR is a N-Channel Power MOS FET with low on-state


    Original     		xp161a11a1prot-89sot 89 mos fet PDF

    toshiba fet

    Contextual Info: Features and Structure POWER MOS FET Power MOS FET 1 Outstanding switching and frequency characteristics without carrier storage effect. (2) Ragged without current concentration. (3) Low driving power due to voltage-controlling device. (4) Easy parallel connections.


    OCR Scan     		2sk22672sk1489ot-89toshiba fet PDF

    XP162A01B5PR

    Contextual Info: Power MOS FET ◆P-Channel Power MOS FET •Applications ◆DMOS Structure ●Notebook PCs ◆Low On-State Resistance: 0.25Ω max ●Cellular and portable phones ●On-board power supplies ◆Ultra High-Speed Switching ●Li-ion battery systems ◆SOT-89 Package


    Original     		nsot-89xp162a01b5prot-89 PDF

    2SA2160

    Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
    Contextual Info: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series


    Original     		o-220fm47p4869e2sa21602sa2149+82sc6005rqw200rdx100n45rqa200n03rqw200n03rla130n03rdx*100n452sc6027 PDF

    XP161A01A8PR

    Contextual Info: Power MOS FET ◆N-Channel Power MOS FET •Applications ◆DMOS Structure ●Notebook PCs ◆Low On-State Resistance: 0.18Ω max ●Cellular and portable phones ●On-board power supplies ◆Ultra High-Speed Switching ●Li-ion battery systems ◆SOT-89 Package


    Original     		nsot-89xp161a01a8prot-89 PDF

    XP161A1355PR

    Contextual Info: Power MOS FET ◆N-Channel Power MOS FET •Applications ◆DMOS Structure ●Notebook PCs ◆Low On-State Resistance : 0.05Ω max ●Cellular and portable phones ◆Ultra High-Speed Switching ◆SOT-89 Package ●On-board power supplies ●Li-ion battery systems


    Original     		nsot-89xp161a1355prot-89 PDF

    XP161A0390PR

    Contextual Info: Power MOS FET ◆N-Channel Power MOS FET •Applications ◆DMOS Structure ●Notebook PCs ◆Low On-State Resistance: 0.09Ω max ●Cellular and portable phones ●On-board power supplies ◆Ultra High-Speed Switching ●Li-ion battery systems ◆SOT-89 Package


    Original     		nsot-89xp161a0390prot-89 PDF

    j 6815 transistor

    Abstract: TRANSISTOR J 6815 EQUIVALENT C 5763 transistor transistor M 9718 5609 transistor 4082 mitsubishi 9622 transistor 4303 sot89 8948 780-4 transistor
    Contextual Info: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MOS FET Revision date:26 /Feb.’02 RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications .


    OCR Scan     		rd00hvs1175mhz48maxot-89+10j 6815 transistortransistor j 6815 equivalentc 5763 transistortransistor m 97185609 transistor4082 mitsubishi9622 transistor4303 sot898948780-4 transistor PDF