FET MARKING G2 Search Results

3sk300

Abstract: DB64 DSA003642
Contextual Info: 3SK300 Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-449A Z 2nd. Edition Mar. 2001 Features • Low noise figure NF = 1.0 dB typ. at f = 200 MHz • High gain PG = 27.6 dB typ. at f = 200 MHz Outline MPAK-4 2 3 1 4 Note: Marking is “ZR–”

SLG55221

Abstract: fet n-channel pin configuration FET marking code
Contextual Info: 2 Rail GreenFETTM High Voltage Gate Driver Features Pin Configuration 5V Power supply • Drain Voltage Range 1.0V to 20V • • VCC • Controlled Turn on Slew Rate • TDFN-8 Package 2 4 3 8 7 6 5 PG G1/G2 S/DIS1 D 8-pin TDFN Top View Environmental Application Functions

SLG55221

Abstract: FET MARKING 600 V logic level fet fet MARKING g2 fet n-channel pin configuration
Contextual Info: 2 Rail GreenFETTM High Voltage Gate Driver Features Pin Configuration 5V Power supply • Drain Voltage Range 1.0V to 20V • • VCC • Controlled Turn on Slew Rate • TDFN-8 Package 2 4 3 8 7 6 5 PG G1/G2 S/DIS1 D 8-pin TDFN Top View Environmental Application Functions

IRF7907PBF

Contextual Info: IRF7907PbF-1 HEXFET Power MOSFET VDS 30 RDS on m ax Q1 V 16.4 (@VGS = 10V) mΩ RDS(on) m ax Q2 11.8 (@VGS = 10V) Qg (typical) Q1 6.7 Qg (typical) Q2 14 ID(@TA = 25°C)Q1 9.1 ID(@TA = 25°C)Q2 11 nC S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SO-8 A Applications

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD L8200 Preliminary LINEAR INTEGRATED CIRCUIT CONFIDENTIAL, SUPPLIDE UNDE NDA SINGLE LNB-BIAS, CONTROL AND POWER MANAGEMENT SOLUTION  DESCRIPTION The UTC L8200 is a single chip power management and control solution for LNB’s. The highly integrate solution provides

FET bias

Abstract: AT1506 AT1506R SSOP20
Contextual Info: AT1506 Preliminary Product Information FET BIAS CONTROLLER Features ˙Provides bias for GaAs and HEMT FETs ˙Drives up to four FETs ˙Dynamic FET protection ˙Drain current set by external resistor ˙Regulated negative rail generator requires only 2 external capacitors

slg55221

Abstract: SILEGO
Contextual Info: SLG55251 Not for Distribution Features Pin Configuration • 5V Power supply • Drain Voltage Range 1.0V to 20V VCC Internal Gate Voltage Charge Pump ON# 2 Controlled Load Discharge Rate DIS2 GND 4 • • Controlled Turn on Slew Rate • TDFN-8 Package 3

AT1504

Abstract: AT1504R SSOP16 surface id4 d
Contextual Info: AT1504 Preliminary Product Information FET BIAS CONTROLLER Features ˙Provides bias for GaAs and HEMT FETs ˙Drives up to four FETs ˙Dynamic FET protection ˙Drain current set by external resistor ˙Regulated negative rail generator requires only 2 external capacitors

SLG55321

Abstract: datecode G1
Contextual Info: 3 Rail GreenFETTM High Voltage Gate Driver Features Pin Configuration 5V Power supply • Drain Voltage Range 1.0V to 20V • Internal Gate Voltage Charge Pump • Controlled Load Discharge Rate • Controlled Turn on Slew Rate • TDFN-8 Package 1 ON 2 DIS2

Contextual Info: IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) ID -3.4 (@TC = 25°C) d A T OP VIEW S1 1 6 D1 S2 D1 G1 2 FET 1 D1 D1 D2 5 G2 D2 D2 3 G2 4 S2 D2 FET 2 G1 S1 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

Motorola transistor smd marking codes

Abstract: UAF3000 BAR64 spice model parameter PMBFJ620 spice model bf1107 spice model RF LNB C band chipset PIN diode SPICE model BAP50 BSS83 spice model MPF102 spice model 2SK163 spice model
Contextual Info: RF manual 11th edition Application and design manual for RF products December 2008 www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,

AT1511

Abstract: AT1511R SSOP20 VG10 VG20 HEMT marking P
Contextual Info: AT1511 Preliminary product Information FET BIAS CONTROLLER AND TONE DETECTION Features Description •Provides bias for GaAs and HEMT FETs •Drives up to three FETs •Dynamic FET protection •Drain current set by external resistor •Regulated negative rail generator requires

FET MARKING CODE

Abstract: IRF FET 10BQ040 EIA-541 IRFR120 IRLR8103V IRLR8503 FET MARKING QG Junction P FET High Current Low Side Switch
Contextual Info: PD-93839C IRLR8503 IRLR8503 • • • • N-Channel Application-Specific MOSFET Ideal for CPU Core DC-DC Converters Low Conduction Losses Minimizes Parallel MOSFETs for high current applications HEXFET MOSFET for DC-DC Converters D • 100% RG Tested Description

2SK43 transistor

Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
Contextual Info: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written

AT1512

Abstract: AT1512R SSOP20 SSOP-20 VG10 VG20 hemt lnb
Contextual Info: AT1512 Preliminary product Information FET BIAS CONTROLLER AND TONE DETECTION Features Description •Provides bias for GaAs and HEMT FETs •Drives up to 3 FETs with Dynamic FET protection •Regulated negative rail generator requires only 2 external capacitors

UAA 1006

Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Contextual Info: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH

FK350601

Contextual Info: Doc No. TT4-EA-12667 Revision. 3 Product Standards MOS FET FC6546010R FC6546010R Dual N-channel MOS FET Unit : mm For switching 2.0 0.2 • Features 6 5 4 1 2 3 1.25 2.1  Low drive voltage: 2.5 V drive  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL:Level 1 compliant

FC6946010R

Contextual Info: Doc No. TT4-EA-12652 Revision. 2 Product Standards MOS FET FC6946010R FC6946010R Dual N-channel MOS FET Unit : mm 1.6 For switching 0.2 • Features 0.13 6 5 4 1 2 3 1.2 1.6  Low drive voltage: 2.5 V drive  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL : Level 1 compliant

2SK2090

Abstract: C10535E MEI-1202 marking G22
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2090 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2090 is an N-channel vertical MOS FET. Because PACKAGE DIMENSIONS in mm it can be driven by a voltage as low as 2.5 V and it is not 2.1 ±0.1 1.25 ±0.1 necessary to consider a drive current, this FET is ideal as an

Contextual Info: Doc No. TT4-EA-12578 Revision. 2 Product Standards MOS FET FC6943010R FC6943010R Dual N-channel MOS FET Unit : mm 1.6 For switching 0.2 0.13 6 5 4 1 2 3 • Features 1.2 1.6  Low drive voltage: 2.5 V drive  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL : Level 1 compliant

Contextual Info: Doc No. TT4-EA-14491 Revision. 3 Product Standards MOS FET FC8V22080L FC8V22080L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 2.9 0.3 8 7 6 5 1 2 3 4 0.16 „ Features 2.4 2.8 y Low drain-source ON resistance:Rds on typ. = 13 mΩ（VGS = 4.5 V)

Contextual Info: Doc No. TT4-EA-14490 Revision. 3 Product Standards MOS FET FC8V22090L FC8V22090L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 2.9 0.3 0.16 8 7 6 5 1 2 3 4 „ Features 2.4 2.8 y Low drain-source ON resistance:Rds on typ. = 9.5 m Ω（VGS = 4.5 V)

marking G21

Abstract: 2SK1958 C10535E MEI-1202
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1958 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK1958 is an N-channel vertical MOS FET. Because PACKAGE DIMENSIONS in mm it can be driven by a voltage as low as 1.5 V and it is not 2.1 ±0.1 necessary to consider a drive current, this FET is ideal as an