FET DATA SHEET Search Results

motorola an569 thermal

Abstract: diode zener motorola MTM10N100E 2N3904 AN569 AN569 in Motorola Power Applications
Contextual Info: Order this data sheet by MTM10N100E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet TMOS E-FET High Energy Power FET TMOS POWER FET 10 AMPERES rDS on = 1-2 OHMS 1000 VOLTS N-Ctiannel Enhancem ent-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to with­

NES1417B-30

Abstract: nec 1441
Contextual Info: DATA SHEET PRELIMINARY DATA SHEET GaAs MES FET NES1417B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NES1417B-30 is power GaAs FET which provides high output power and high gain in the 1.4-1.7GHz 24±0.3

MTM24N45E

Abstract: 2N3904 AN569 DS3905 2N3904 on semiconductors application note 2N3904 MOTOROLA
Contextual Info: Order this data sheet by MTM24N45E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet TMOS E-FET High Energy Power FET N-Channel Enhancem ent-Mode Silicon Gate T M O S PO W ER FET 24 A M P E R E S This advanced high voltage TMOS E-FET is designed to with­

POUT36

Abstract: NES1821B-30 p1209
Contextual Info: DATA SHEET PRELIMINARY DATA SHEET GaAs MES FET NES1821B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NES1821B-30 is power GaAs FET which provides high output power and high gain in the 1.8-2.1 GHz 24±0.3

LM2576 step-up converter

Abstract: Inverting Switching Regulators mc34166 Boost regulator FET Buck Controller NCV33063A NCP1442
Contextual Info: Numeric Data Sheet Listing Data Sheet Function Page CS51031 Fast P−Ch FET Buck Controller . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 CS51033 Fast P−Ch FET Buck Controller . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

AN569

Abstract: MTP12N06EZL mosfet transistor 400 volts.100 amperes
Contextual Info: MOTOROLA Order this document by MTP12N06EZL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP12N06EZL N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.180 OHM This advanced TMOS power FET is designed to withstand high

Contextual Info: MOTOROLA Order this document by MTP75N06HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP75N06HD HDTMOS E-FET™ High Density Power FET Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 75 AMPERES This advanced high-cell density HDTMOS E-FET is designed to

AN569

Abstract: MTB60N05HDL SMD310
Contextual Info: MOTOROLA Order this document by MTB60N05HDL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB60N05HDL Motorola Preferred Device TMOS POWER FET 60 AMPERES 50 VOLTS RDS on = 0.014 OHM

MTP75N06HD

Abstract: AN569
Contextual Info: MOTOROLA Order this document by MTP75N06HD/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET  High Density Power FET Designer's MTP75N06HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES RDS on = 10.0 mOHM

Contextual Info: MOTOROLA Order this document by MTP12N06EZL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E-FET ™ High Energy Power FET MTP12N06EZL N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = °-180 OHM This advanced TMOS power FET is designed to withstand high

MTH30N25E

Abstract: 84ac 2N3904 AN569
Contextual Info: Order this data sheet by MTH30N25E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Data sheet ~esigner’s MTH30N25E TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and switch efficiently.

AN569

Abstract: MTP75N06HD HDTMOS TRANSISTOR motorola 838
Contextual Info: MOTOROLA Order this document by MTP75N06HD/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET  High Density Power FET Designer's MTP75N06HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES RDS on = 10.0 mOHM

AN569

Abstract: U425
Contextual Info: Order this data sheet by MTH6N100E/D MOTOROLA SEMICONDUCTOR ~ TECHNICAL DATA Designer’s MTH6NIOOE Data sheet TMOS E-FET High Energy Power FET N-Channel Enhancement-mode Silicon Gate This advanced high voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and switch efficiently.

2N3904

Abstract: AN569 MTP4N50E
Contextual Info: MOTOROLA Order this document by MTP4N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP4N50E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 500 VOLTS RDS on = 1.5 OHMS

AN569

Abstract: MTD20P03HDL SMD310
Contextual Info: MOTOROLA Order this document by MTD20P03HDL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET. High Density Power FET DPAK for Surface Mount Designer's MTD20P03HDL Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS on = 0.099 OHM

AN569

Abstract: MTD20N03HDL SMD310
Contextual Info: MOTOROLA Order this document by MTD20N03HDL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET. High Density Power FET DPAK for Surface Mount MTD20N03HDL Designer's Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS on = 0.035 OHM

MTP3N6

Abstract: MTP3N60E 2N3904 AN569 tl 2N3904 TRANSISTOR
Contextual Info: MOTOROLA Order this document by MTP3N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP3N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS

2N3904

Abstract: AN569 MTP5N40E 221A-06 MTP5N40E-D
Contextual Info: MOTOROLA Order this document by MTP5N40E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP5N40E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS on = 1.0 OHM

AN569

Abstract: MTB50P03HDL SMD310 MOSFET sot-143
Contextual Info: MOTOROLA Order this document by MTB50P03HDL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB50P03HDL Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS on = 0.025 OHM

MOSFET 4418

Abstract: low voltage power transistor 33n 10e 33n10e mosfet 4419 4418 mosfet S 170 MOSFET TRANSISTOR
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB33N10E TMOS E-FET ™ High Energy Power FET D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET 33 AMPERES 100 VOLTS RDS on - 0.06 OHM N-Channel Enhancement-Mode Silicon Gate

AN569

Abstract: MTD20N03HDL SMD310
Contextual Info: MOTOROLA Order this document by MTD20N03HDL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET. High Density Power FET DPAK for Surface Mount Designer's MTD20N03HDL Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS on = 0.035 OHM

2N3904

Abstract: AN569 MTP3N60E
Contextual Info: MOTOROLA Order this document by MTP3N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP3N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS

TFK S 417 T

Abstract: tfk s 417 TFK U 3201 M tfk 830 tfk 417 500C AN569 MTM24N45E tfk 145 TFK A 6
Contextual Info: Order this data sheet by MTM24N45E/D IMOTOROLA SEMICONDUCTOR ~ TECHNICAL DATA Designer’s TMOS Data sheet MTM24N45E E-FET ~,., \ r High Energy Power FET N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and switch efficiently.

MTH13N50E

Contextual Info: MOTOROLA SC ÍXSTRS/R F> 2bE D • b3b?2S4 0 0 ^ 0 4 ñ Order this data sheet by MTH13N50E/D MOTOROLA E3 SEMICONDUCTOR TECHNICAL DATA MTH13N50E Designer's Data Sheet TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate T M O S POWER FET