FET DATA SHEET Search Results

MTP2955E

Abstract: AN569 MTP2955E/D
Contextual Info: MOTOROLA Order this document by MTP2955E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP2955E Motorola Preferred Device P–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS

nec 151

Abstract: transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor NE32900
Contextual Info: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons.

Contextual Info: BUK762R0-40C N-channel TrenchMOS standard level FET Rev. 02 — 20 August 2007 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using Philips Ultra High-Performance Automotive (UHP) TrenchMOS technology.

PS7141L-1C

Abstract: PS7141L-1C-A PS7141L-1C-E3 PS7141L-1C-E3-A PS7141L-1C-E4 NL601 PS7141-1C PS7141-1C-A
Contextual Info: DATA SHEET Solid State Relay OCMOS FET PS7141-1C,PS7141L-1C 8-PIN DIP, 400 V BREAK DOWN VOLTAGE TRANSFER TYPE 2-ch Optical Coupled MOS FET −NEPOC Series− DESCRIPTION The PS7141-1C and PS7141L-1C are transfer type solid state relays containing normally open N.O. contact and

771-BUK7215-55A118

Contextual Info: DP AK BUK7215-55A N-channel TrenchMOS standard level FET Rev. 02 — 27 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3357 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3357 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3357 TO-3P designed for high current switching applications.

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1704 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWING Unit : mm This µPA1704 is N-Channel MOS Field Effect Transistor 8 designed for power management applications and Li-ion 5 1,2,3 ; Source

EFA160A

Contextual Info: Excelics EFA160A DATA SHEET Low Distortion GaAs Power FET • • • • • • +29.0dBm TYPICAL OUTPUT POWER 9.0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY,

EPA960B

Contextual Info: Excelics EPA960B PRELIMINARY DATA SHEET High Efficiency Heterojunction Power FET • • • • • •  +38.5dBm TYPICAL OUTPUT POWER 18.5dB TYPICAL POWER GAIN AT 2GHz 0.5 X 9600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION

AGR19045XF

Contextual Info: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

Contextual Info: PMPB15XP 12 V, single P-channel Trench MOSFET 19 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

2N7002BK

Abstract: 771-2N7002BK215 trench relay
Contextual Info: 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

NE429M01

Abstract: NE429M01-T1
Contextual Info: PRELIMINARY DATA SHEET NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES LOW NOISE FIGURE & HIGH ASSOCIATED GAIN: NF = 0.9 dB TYP, GA = 10 dB TYP at f = 12 GHz • 6 PIN SUPER MINIMOLD PACKAGE

EFC240B

Contextual Info: Excelics EFC240B PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • • +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE

California Eastern Laboratories OR NEC

Abstract: NEZ1414-5H T-78
Contextual Info: PRELIMINARY DATA SHEET 5 W Ku-BAND POWER GaAs HJ-FET NEZ1414-5H FEATURES OUTLINE DIMENSIONS Units in mm • CLASS A OPERATION PACKAGE OUTLINE X-17 • HIGH OUTPUT POWER: 37.5 dBm TYP • HIGH LINEAR GAIN: 9.0 dB TYP 8.25 ± 0.15 • HIGH EFFICIENCY: 36% TYP

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2405T6Q 1 W SP3T SWITCH DESCRIPTION The μPG2405T6Q is an SP3T GaAs FET switch which was developed for Bluetooth , wireless LAN and NFC. TM <R> This device can operate frequency from 10 MHz to 2.5 GHz, having the low insertion loss and high linearity.

2N7002PT

Contextual Info: 2N7002PT 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 2 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: 83B BSS84AKMB SO T8 50 V, single P-channel Trench MOSFET Rev. 1 — 6 June 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

PMV213SN

Abstract: PMV213
Contextual Info: PMV213SN µTrenchMOS standard level FET Rev. 02 — 19 February 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV213SN in SOT23.

EFA060B-100F

Contextual Info: Excelics EFA060B-100F DATA SHEET Low Distortion GaAs Power FET  7<3  '  7<3  All Dimensions In mils ELECTRICAL CHARACTERISTICS Ta = 25 OC SYMBOLS P1dB G1dB PAE PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression

MBK10

Contextual Info: PSMN015-100P/100B N-channel TrenchMOS Standard level FET Rev. 05 — 14 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in each package.

Contextual Info: SN74CB3Q3306A-EP www.ti.com SCDS352 – DECEMBER 2013 Dual FET Bus Switch 2.5-V/3.3-V Low-Voltage High-Bandwidth Bus Switch Check for Samples: SN74CB3Q3306A-EP FEATURES 1 High-Bandwidth Data Path up to 500 MHz(1 5-V-Tolerant I/Os With Device Powered Up or

MT108 motorola transistor

Abstract: mt108 MMFT108T1 SMD310
Contextual Info: MOTOROLA Order this document by MMFT108T1/D SEMICONDUCTOR TECHNICAL DATA Field Effect Transistor MMFT108T1 N–Channel Enhancement–Mode Logic Level SOT–223  2, 4 DRAIN TMOS FET TRANSISTOR N–CHANNEL — ENHANCEMENT 1 GATE 4 3 SOURCE 1 2 3 CASE 318E–04, STYLE 3

NE32584C-T1

Abstract: nec 3435 transistor am 4428
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.