FET 544 A Search Results

Contextual Info: FLK057XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Drain Source The FLK057XV chip is a power GaAs FET that is designed for

transistor 1345

Abstract: FHR02X FHX02X GaAs FET HEMT Chips
Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)

fujitsu hemt

Contextual Info: FLK057XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Drain Source The FLK057XV chip is a power GaAs FET that is designed for

ATF-13786

Abstract: ATF-13786-STR ATF-13786-TR1 13786
Contextual Info: Surface Mount Gallium Arsenide FET for Oscillators Technical Data ATF-13786 Description • Low Cost Surface Mount Plastic Package • High fMAX: 60 GHz Typical • Low Phase Noise at 10 GHz: -110 dBc/Hz @ 100 kHz Typical • Output Power at 10 GHz: up to 10 dBm

Contextual Info: PMF280UN N-channel µTrenchMOS ultra low level FET Rev. 01 — 27 February 2004 Product data M3D102 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Surface mounted package

Contextual Info: F L K l 02MH-14 FUJITSU X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 30.0dBm Typ. High Gain: G ^ b = 6.5dB(Typ.) High PAE: r iadd = 31%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK102MH-14 is a power GaAs FET that is designed for general

PH7030L

Abstract: nxp 544
Contextual Info: PH7030L N-channel TrenchMOS logic level FET Rev. 05 — 29 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

Contextual Info: FLM3742-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 12.0dB (Typ.) High PAE: hadd = 38% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50W

Contextual Info: DC-DCコンバータ DC-DC CONVERTER 品番 ECD036-030A04-25 Part No. 特長 FEATURES YSuper mini and thinner size YRealization of high efficiency with the adoption of synchronous rectification method YAdjustable output voltage with external voltage YInclude Bypass FET

GaAs FETs

Abstract: FLM1414-8C
Contextual Info: FLM1414-8C Fuffrsu Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P-idg = 38.5dBm Typ. High Gain: G-j^B = 5.0dB (Typ.) High PAE: riadd = 19% (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed

Contextual Info: NCP3231A High Current Synchronous Buck Converter The NCP3231A is a high current, high efficiency, voltage−mode synchronous buck controller which operates from 4.5 V to 18 V input and generates output voltages down to 0.6 V at up to 25 A. http://onsemi.com

6790

Abstract: TO274 IRFPS3810 TO-274
Contextual Info: PD - 93912B IRFPS3810 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.009Ω G ID = 170A† S Description

J 6920 FET

Abstract: igbt 50V 420A IRFPS30N60K
Contextual Info: PD- 94417 IRFPS30N60K SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching HEXFET Power MOSFET VDSS RDS(on) typ. ID 160mΩ 30A 600V Benefits l Low Gate Charge Qg results in Simple Drive Requirement

34970A

Abstract: 34952A 34980A 34941A
Contextual Info: Agilent 34832A BenchLink Data Logger Pro Software for Agilent 34980A Data Sheet Advanced data logging and decision making with no programming Key features • Quick test setup and execution • Create multiple scan lists • Use advanced math functions • Collect, monitor and manage data

Contextual Info: PD - 94384A SMPS MOSFET IRFPS40N60K Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.110 Ω 40A 600V

bTI51

Abstract: fsjc F4CJ 2SJ209 TF230
Contextual Info: 5s—S ,T NEC • 2/— f~~ M O S Field Effect Transistor A l? r / v f7 2SJ209 MOS FET X ' f ' y & 2 S J 2 0 9 l i P f - ^ ^ ^ * i ^ M O S FETT", 5 < fc > yt > ^M O S FET 7 M ? T f F R K 2.8 ±0.2 t o IÌ.X4 "/r &0, t ' ^ / K U S S - 1.5 L T ^ iiT 't o I-

OPA827AP

Abstract: opa627 0PA637 opa637 burr brown Heat sink opa627bp
Contextual Info: For Im eúiate Assistance, M a d M Local Salesperson B U R R -B R O W N $ OPA627 OPA637 AVAILABLE IN DIE Precision High-Speed Difet OPERATIONAL AMPLIFIERS FEATURES APPLICATIONS • VERY LOW NOISE: 4.5nV/VHz at 10kHz • FAST SETTLING TIME: OPA627—550ns to 0.01%

duracell mn 1300

Contextual Info: 19-0371; Rev 2; 7/96 N iCd/N iM H B a tte ry Fast-Charge Controllers The MAX2003/MAX2003A are fast-charge battery charg­ ers with conditioning for NiCd (nickel cadmium) or NiMH (nickel-metal hydride) rechargeable batteries. The MAX2003A has the same features as the MAX2003 with

4250CN

Abstract: lm4250 ua244 lm42 LM4250CH/NOPB
Contextual Info: LM4250 Programmable Operational Amplifier General Description Features The LM4250 and LM4250C are extremely versatile programmable monolithic operational amplifiers. A single external master bias current setting resistor programs the input bias current, input offset current, quiescent power consumption,

10 mhz frequency counter

Abstract: Microwave multiplexer TS5000 N6700 34952A N6770 34924A 34950A 34921A TS-5040
Contextual Info: Agilent TS-5040 Entry Functional Test Rack for System- and Self-Integrators Data Sheet Key features and benefits • The perfect base for your automotive test applications • Plug and play system for building functional test systems • Easily expandable to fit many application needs

LM4250

Contextual Info: LM4250 LM4250 Programmable Operational Amplifier Literature Number: SNOSC17A LM4250 Programmable Operational Amplifier General Description Features The LM4250 and LM4250C are extremely versatile programmable monolithic operational amplifiers. A single external

Contextual Info: RF2483 Preliminary LOW NOISE DUAL-BAND QUADRATURE MODULATOR WITH AGC Typical Applications • TDMA/GSM/EDGE Handsets • TDMA-Based Wireless Applications • GSM/EDGE Handsets • Wireless Local Loop • W-CDMA Handsets • Basestations Product Description

Contextual Info: B yB ^g sg g N * F ^ B = M M B O P A 6OO 9n f r W 1 1 Fast-Settling Wideband OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • FAST SETTLING: 80ns to ±0.1% 100ns to ±0.01% • FULL DIFFERENTIAL FET INPUT • -25°C to +85°C AND -55°C to +125°C TEMPERATURE

Contextual Info: bq24090, bq24091 bq24092, bq24093 www.ti.com SLUS968B – JANUARY 2010 – REVISED JUNE 2010 1A, Single-Input, Single Cell Li-Ion Battery Charger Check for Samples: bq24090, bq24091, bq24092, bq24093 FEATURES APPLICATIONS • • • • • 1 • • CHARGING