FET 30 F 124 Search Results

Contextual Info: 9 ~ n ~ f a g j g ffg y Product S p ec ifica tio n s D ecem ber 1 9 9 7 1 o f 4 CFK2062-P3 1.8 to 2.0 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package

CFK2062-P3

Abstract: CFK2062-P3-000T pt 4115 FET 4953
Contextual Info: .fCICDITClf P ro d u c t S p e c ific a tio n s D ecem ber 1 9 9 7 1 o f 4 CFK2062-P3 1.8 to 2.0 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package

Contextual Info: 9 e SLE B Ê TE K P roduct S p ecificatio n s D e ce m b er 1 9 9 7 1 o f 4 CFK2062-P1 800 to 900 MHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package

Contextual Info: 9 CFH2162-P1 A dvanced P ro d u ct Inform ation M a y 1996 1 o f 2 800 to 900 MHz +36 dBm Power GaAs FET Features □ High Gain □ +36 dBm Power Output □ Proprietary Power FET Process □ >45% Linear Power Added Efficiency □ +33 dBm with 30 dBc Third Order Products

Contextual Info: Preliminary Datasheet RQA0004LXAQS R07DS0496EJ0200 Previous: REJ03G1567-0100 Rev.2.00 Jun 30, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +29.7 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz)  Compact package capable of surface mounting

Contextual Info: FLM7185-6 F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 38.0dBm Typ. • High Gain: G1dB = 8.0dB (Typ.) • High PAE: hadd = 30% (Typ.) • Low IM3 = -45dBc@Po = 27.0dBm • Broad Band: 7.1 to 8.5GHz • Impedance Matched Zin/Zout = 50ohm

BM125

Contextual Info: SMF-03300 ELECTRO NICS Sam sung M icrow ave Sem iconductor Gain Optimized Low Current G aAs FET 2-20 GHz Description Features The S M F-03300 is a 300 p.m n-channel M E S F E T with 0.5 |xm gate length, utilizing Sam sung M icrowave’s gain/low current optimized G 30 process. Ti/Pt/Au gate metallization

5N521

Abstract: CFY30
Contextual Info: SIEMENS CFY 30 GaAs FET F eatures • Low noise /-'mm = 1.4 d B at 4 G Hz • High gain (11.5 dB typ. a l 4 GHz) • For o scillators up to 12 G Hz • For am p lifiers up to 6 GHz • Io n -im planted p lanar structure • C hip all gold m etallization

Contextual Info: ADE-208-257A Z PF0340A MOS FET Power Amplifier Module for UHF Band HITACHI Features Rev. 1 January 1995 Pin Arrangement •R F -J • Sm all package: 30 x 10 x 5.9 mm • High efficiency: 43% typ. at 9.6 V 40% typ. at 4.8 V 1: Pin • Low pow er control current: ! 5 0 p A ty p .

Contextual Info: Doc No. TT4-EA-12484 Revision. 2 Product Standards MOS FET FJ6K01010L FJ6K01010L Silicon P-channel MOS FET Unit : mm 2.0 For switching 0.2 0.13 6 5 4 1 2 3 • Features 1.7 2.1  Low drain-source On-state resistance : RDS on typ. = 26 m  ( VGS = -4.5 V )

Contextual Info: Doc No. TT4-EA-12408 Revision. 2 Product Standards MOS FET MTM78E2B0LBF MTM78E2B0LBF Gate Resistor installed Dual N-Channel MOS Type Unit: mm 2.0 For lithium-ion secondary battery protection circuit 0.2 8 7 6 5 1 2 3 4 1.7 2.1 • Features 0.13  Low drain-source On-state Resistance

2n2369 avalanche

Abstract: 2n4949 2N7373 2N1711 gc. marking 2N1131 2N2222 2N2369 2N2432 2N2484
Contextual Info: Open Project Status Spec Tech Action Status 114 H RK CORRECTION TO CONFORMANCE INSP FORMAT FD TO EDIT 6 APR 2010 9/29/2009 124 RK CORRECTION TO TEST RATINGS TABLE ID TO EDIT 23 OCT 2010 6/15/2010 177 H GC 2N1131 ADD FREQ TO A4, HOB, HIB AND HRB DATED TO TOM 29 OCT 2010

PT100 xtr106

Abstract: variable xtr105 OPA544 ina125 0-10v OPA349 PT100 OPA68x cross reference guide PT100 AD620 PGA204 cmos opamp
Contextual Info: Selection Guide OPA 350 October ‘99 ADS1 124 VSP 200 Contents Instrumentation Amplifiers -INA + Packages DIP -8 High Precision INAs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Programmable Gain INAs . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Contextual Info: MICROWAVE TECHNOLOGY bbE D • L.1241DD DDDD3DG 5 5 6 ■ NRblV MwT -12 GP / SP / HP 18GHz HIGH POWER GaAs FETCHIP kàâ kM MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • 0.5 WATT POWER OUTPUT AT 12 GHZ • +37 dBm THIRD ORDER INTERCEPT

mos 4069

Contextual Info: < Silicon RF Power MOS FET Discrete > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power

Contextual Info: < Silicon RF Power MOS FET Discrete > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power

16621

Abstract: 351 fet
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45A2527B 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic

Band Power GaAs FET

Abstract: 16621 high power FET transistor s-parameters MGFS45A2527B
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45A2527B 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic

fet 30 f 124

Abstract: TIP 41 fet "GaAs FET" MGFC41V5964
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V5964 5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC41V5964 is an internally impedence matched GaAs power FET especially designed for use in 5.9 - 6.4

low noise pseudomorphic

Contextual Info: MwT - H4 26 GHz Low Noise Pseudomorphic HEMT GaAs FET_ MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES — 50 • 0.9 dB NOISE FIGURE AT 12 GHZ • HIGH ASSOCIATED GAIN 1241 8.4 •0.3 MICRON REFRACTORY METAL /GOLD GATE

OPA111

Abstract: OPA124 OPA124P OPA124PA OPA124PB OPA124U OPA124UA 120-3C
Contextual Info: OPA124 OPA 124 Low Noise Precision Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW NOISE: 6nV/√Hz 10kHz ● LOW BIAS CURRENT: 1pA max ● PRECISION PHOTODIODE PREAMP ● MEDICAL EQUIPMENT ● LOW OFFSET: 250µV max ● LOW DRIFT: 2µV/°C max

OPA1244

Abstract: SBOA058 fet operational amplifier
Contextual Info: OPA124 OPA 124 Low Noise Precision Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW NOISE: 6nV/√Hz 10kHz ● LOW BIAS CURRENT: 1pA max ● PRECISION PHOTODIODE PREAMP ● MEDICAL EQUIPMENT ● LOW OFFSET: 250µV max ● LOW DRIFT: 2µV/°C max

MGFS45A2527B

Abstract: 16621
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45A2527B 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic

MGFL45V1920A

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFL45V1920A 1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers.The hermetically sealed metal-ceramic