0000B74 Search Results

AS4C256K16F0-60JC

Abstract: ez 948 AS4C256K16F0 LRAL taa 723
Contextual Info: WÊ High Performance 256Kxl6 CMOS DRAM AS4C256K16F0 High Speed 256Kxl6 CMOS DRAM Fast Page Mode PRELIMINARY F E A TU R E S 512 refresh cycles, 8 ms refresh interval * Organization: 262,144 words by 16 bits - RAS-only or CAS-before-RAS refresh • High speed

Contextual Info: 262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • S m artV oltage T echnology — 5V or 12V Program /Erase — 2.7V, 3.3V or 5V Read O peration • H igh-Perform ance Read M axim um Access Tim es — 5V: 60/80/120 ns — 3V: 110/130/150 ns — 2.7V: 120 ns

Contextual Info: General Characteristics of Fixed Wirewound Resistors DRALORIC BASIC CONSTRUCTION Wirewound resistors usually consist of a substrate of high grade special ceramic material of high mechanical stability onto which is wound, at constant pitch, a single layer wire or ribbon resistance element.

Contextual Info: 9 ~ n ~ f a g j g ffg y Product S p ec ifica tio n s D ecem ber 1 9 9 7 1 o f 4 CFK2062-P3 1.8 to 2.0 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package