FERRANTI ZVN Search Results

Ferranti

Abstract: 4070 CMOS analogue ohmmeter circuit diagram digital ic cd 4066 1N4141 cmos 4070 Ferranti Semiconductors 10k multiturn preset simple SL 100 NPN Transistor ZN451
Contextual Info: ! 4 FERRANTI semiconductors ZN451E/CJ ADVANCE PRODUCT INFO RM ATIO N 3% Digit D V M IC with External Auto-Zero FEATURES • External circuits may be included in the auto zero loop • FuR-scale reading 1 -999m V or lower. • Measures sum or difference of tw o inputs

FXT2907ASM

Abstract: FXT3866 ZVN4206 FXT2222ASM FXT54SM fmmt3904TA ferranti mosfets
Contextual Info: ZETEX SEMICON DUCTORS 2 03E D • ^70578 000b7fib 1 ■ Z E T B ; CENTRE COLLECTOR E-LINE^i’lWT The Ferranti E-line range is now available with a centre collector surface mount outline making it suitable as a replacement for SOT-89 devices. The range has been extended to include popular SOT-89 specifications,

FERRANTI

Abstract: IRFZ32 VN10LP ZVNO12 IRFZ30 ZVN2106 ZVN2106A IRFZ20 IRFZ22 ZVN0120A
Contextual Info: - 245 /m Ta=25l3 Vds or % Vd g Vg s !l (V) (V) t £J € *± € m Vg s (V) C M A) N N N N N N N N N 200 ± 2 0 200 ± 2 0 240 ± 2 0 240 ± 2 0 240 ± 2 0 350 ± 2 0 N N N N N N N N N 400 400 450 90 60 60 60 100 100 100 200 200 200 60 60 100 5 ±20 ±20

ferranti

Abstract: ZVN2210L ZVN3306B ZVN3310B ZVH2224B ZVN2220L ZVN2224L ZVN2535B ZVN3206L ZVN3210L
Contextual Info: - 246 - f §y s tt € A X t Vos or i Vdg * V Vg s (V) Ig s s Id Pi> * /CH * /CH (A) m M $ ÎS (Ta=25^) Vg s (V) Vd s (V) ( M A) (V) (V) («A) Ciss g fs Coss Crss & & m n V g s -0 (max) *typ V g s (V) (0 ) D (Ta=25tC) lo(on) FDs(on) Vd s = Vg s max min (nA)

ZVN0106A

Abstract: ZVP0106A ZVP3304A ZVN1306A ZVN0108L ZVN0106B ZVP2104A ZVP2106A ZVN0106 ZVN1306B
Contextual Info: « » W ¡2 » « EH a > o ® > 8 9 P18 ! ZVN3206L 14A, 0.150 8 I I i ! ZVN3306A I0S17O VN'OLI 0.27A, 50 ZVN1306A 0.2A, 100 8 ZVP0108B 0.6A, 80 ZVP1308B 0.25A, 200 ZVP0108A 0.23A. 8 0 ZVP1308A 0.14A, 200 ZVN0108L 1.5A, 4 0 ZVN1308B 0.5A. 100 ZVP2208B 1.5A, 1 6 0

L50Q

Abstract: ZVN1320B ZVN2210L zvn311 ZVP2210M ZVP3210M
Contextual Info: P19 Ò ZVN0530B 0.15A, 800 ZVN0535B 0.15A, 800 ZVN0540B 0.15A, BOO ZVN0545B 0.15A. 800 ZVN053SA 0.07A, 800 ZVN0540A 0.07A, 800 “S ZVN0530A 0.07A, 802 ZVN2335L 4.5A, 1.50 ZVN0530L 0.15A, 800 ZVN2330L 4.5A, 1.50 jS. as ZVN2345L 4.5A, 1.50 ZVN2340M 4.5A. 1.50

t5d diode

Abstract: T5D SOT23 zetex zvn2206 package details
Contextual Info: ZETEX SEMICOND UCTORS TSD ^70570 D □DQSbb'i 3 • ZETB 95D 0 5 6 6 9 N-channel enhancement mode vertical DMOS FET ZVN2206 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

Ferranti Semiconductors

Contextual Info: ZETEX SEMICONDUCTORS ^5D T •= 70S 7 fi 0GDS703 T • ZETB D 95D 0 5 7 0 3 T-39-H N-channel enhancement mode vertical DMOS FET ZVN3206 FEATURES • Com pact geometry • Fast switching speeds • N o secondary breakdown • Excellent temperature stability

ferranti zvn

Contextual Info: ZETEX S E M I C O N D U C T O R S ci c17DS?0 ^SD D 0QQ5b33 4 • ZETB 95D 0 56 33 T '3 S '2 S N-channel enhancement­ mode vertical D M O S FET ZVN 0540 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

pj 899 diode

Abstract: cr 6848 ZVN2110 ZVN2110L pj 899 g162 ZVN2110A ZVN2110B
Contextual Info: ZET EX S E M I C O N D U C T O R S RSD D cn7D57fi 0 0 D S b S 3 T HZETB 95D 05653 N-channel enhancement mode vertical D M O S FET ZVN 2110 | > | | FEATURES • Com pact geometry • Fast sw itching speeds • N o secondary breakdown • Excellent temperature stability

Contextual Info: ZETEX SEMI CONDUCTORS IS D D TìTDSTa 00031^3 D • ZETB 95D 0 5 6 9 3 D T -3 ? -o f ' IVI-channel enhancement mode vertical DMOS FET Z V N 2224 I [ i FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

ISD 2210

Contextual Info: ZETEX SEMICONDUCTORS TSD D Bi T'ïVOSTÔ D O O S b ? ? 2 MZETB 95D 0 5 6 7 7 T '3 ? '0 ? ZV N 2210 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

201 ferranti

Contextual Info: ZETEX S E M I C O N D U C T O R S TSD D ^70570 0005^5 4 • ZETB 950 05695 T - 3 =? - o ? Z V N 2535 N-channel enhancement mode vertical DMOS FET i FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

K 3911

Abstract: n3220
Contextual Info: ' ZETEX SEMICONDUCTORS U U. I *aa •iSD D ^70570 0 0 0 5 7 1 e 3 ■ ZETB 95D 0 5 7 1 9 T-39-11 N-channel enhancement mode vertical DMOS FET ZV N 3220 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

t5d diode

Contextual Info: ^53 ZETEX SEMICONDUCTORS D TÎ7QS7Ô OOOSbl? h • ZETB 95D 0 5 6 1 7 D — T -3 ? -0 °l ZV N 0124 N-channel enhancement­ mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

b675

Abstract: VN2220
Contextual Info: ZETEX S E M I C O N D U C T O R S =1^70570 D O D S b ô S 1 • ZETB IS» D 95D 0 5 6 8 5 7 - 3 ^ 0 ? N-channel enhancement mode vertical DMOS FET ZV N 2220 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

SQ-10a

Abstract: Teledyne Philbrick 1701 TELEDYNE PHILBRICK 4131-30 TELEDYNE PHILBRICK V to F 4701 Philbrick P85AU TELEDYNE PHILBRICK 1702 TELEDYNE PHILBRICK 2203 TELEDYNE PHILBRICK 1009 teledyne TP 1322 teledyne 4452
Contextual Info: TELEDYNE PHILBRICK M 1 C R C I R C U 1 T S UNITED STATES SOUTHEAST HEADQUARTERS 1640 Huron Trail WEST Allied Drive at Rte. 128 Dedham. MA 02026 Maitland. FL 82751 30423 Canwood Street Suite 212 Agoura Hills. CA 91301 Tel: 8188893827 Twx: 910.494 1949 Tel: