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    FEB09 Search Results

    FEB09 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC AUG ,2006. ALL RIGHTS RESERVED. R E V IS IO N S DW p LTR DESCRIPTION B D DATE DWN B.W s .c 1 1 FEB09 REVISED ECR—0 9 - 0 0 2 8 2 1 APVD D NOTES:


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    feb09850pcs31mar2000 PDF

    DSA0037427

    Abstract: SEMH10
    Contextual Info: SEMH10 NPN Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit 4 • Two galvanic internal isolated Transistors 5 3 with good matching in one package 6 2 • Built in bias resistor (R1 =2.2kΩ, R2=47kΩ)


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    semh10eha07174ot666feb-09-2004+1dsa0037427 PDF

    marking WM

    Abstract: SEMB11 DSA0037426
    Contextual Info: SEMB11 PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit 4 • Two galvanic internal isolated Transistors 5 3 with good matching in one package 6 2 • Built in bias resistor (R1 =10kΩ, R2 =10kΩ)


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    semb11eha07173ot666feb-09-2004+2marking wmdsa0037426 PDF

    h569-445

    Abstract: ED83368-30 CC848846287 BDFB H569445 CC109144812 PBM7900 current monitor panel meter PBM7600FRA 1-800-THE-1PWR
    Contextual Info: Smart Distribution Monitor – VIM1 Adding Enhancements to BDFB/BDCBB Management The VIM1 Smart Distribution Monitor replaces the digital meters used on Lineage Power Battery Distribution Fuse Bays BDFB and Battery Distribution Circuit Breaker Bays (BDCBB). Traditional


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    feb09h569-445ed83368-30cc848846287+7bdfbh569445cc109144812pbm7900current monitor panel meterpbm7600fra1-800-the-1pwr PDF

    2030R

    Contextual Info: BF 2030R Silicon N-Channel MOSFET Tetrode  For low noise, high gain controlled input stages up to 1GHz  Operating voltage 5V Drain AGC HF Input G2 G1 R G1 HF Output + DC GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    2030reha07461ot-143rfeb-09-2001 PDF

    A1015

    Abstract: NMEA GPS microsoft ballpoint mouse ballpoint NMEA GPS usb A1035-H A1015 equivalent gps mouse Receiver service manual schematics tegra
    Contextual Info: GPS Evaluation Kit EVA1035-E A Description of the Evaluation Board for Vincotech’s GPS Receiver / Smart Antenna Module A1035-E User’s Manual Version 1.0 Hardware Revision 01 Revision History Rev. Date 1.0 02-20-09 Description Initial Release, based on EVA1082-A


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    eva1035-ea1035-eeva1082-afeb-09+10a1015nmea gpsmicrosoft ballpoint mouseballpointnmea gps usba1035-ha1015 equivalentgps mouse receiverservice manual schematicstegra PDF

    A1035-H

    Abstract: vincotech GPS Antenna gps antenna external gps receiver UART gps A1080 EVA1035-H NMEA-0183
    Contextual Info: GPS Evaluation Kit EVA1035-H A Description of the Evaluation Board for Vincotech’s GPS Receiver / Smart Antenna Module A1035-H User’s Manual Version 1.0 Hardware Revision 01 Revision History Rev. 0.1 1.0 Date 12-30-08 01-26-09 Description Initial Draft, based on EVA1084-A and A1035-H manuals


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    eva1035-ha1035-heva1084-afeb-09+7vincotechgps antennagps antenna externalgps receiveruart gpsa1080nmea-0183 PDF

    Contextual Info: BF 2030 Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 5V 2 Drain AGC HF Input G2 G1 R G1 HF Output + DC 1 VPS05178 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    vps05178eha07461ot-143feb-09-2001 PDF

    LS2533

    Abstract: LS100 LS150 LS25 LS50 LS75 LS15-05 LS150-12
    Contextual Info: • High MTBF up to 900 000 hours • Superior operating temperatue performance up to 70°C • Very High efficiency up to 87% • Very Low Cost • Compact • Withstands 300VAC surges 5s • Three Year Warranty Key Market Segments & Applications Test & Measurement


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    300vac800-lambda-4feb09ls2533+7ls100ls150ls25ls50ls75ls15-05ls150-12 PDF

    LAMBDA

    Abstract: CE-1050 lambda 128 Lambda diode PEAK tray drawing
    Contextual Info: • 9 to 26V Input • 3.3 to 12V Outputs • Surface Mount • Low 5.5mm Profile • Non Isolated Output Key Market Segments & Applications Telecommunications Datacom Instrumentation CE-1050 Series 1.2 - 2.5A Point of Load Converter CE-1050 Features and Benefits


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    ce-1050feb09lambdalambda 128+2lambda diodepeak tray drawing PDF

    CC10-2412DF-E

    Abstract: cc10-2403sf-e CC1R5-4805SF-E cc10 lambda CC1R5-1212SF-E CC1R5-2403SF-E CC6-2412DF CC15 cc25-2405sf-e
    Contextual Info: • Compact Footprint/Low Profile • Through Hole or SMT Versions • 5V, 12V, 24V & 48V Inputs • 3.3 to 30V1 Single, +12 to 15V Dual Outputs • Output Voltage Adjustment • Input - Output Isolation • RoHS Compliant • 5 Year Warranty Key Market Segments & Applications


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    feb09cc10-2412df-ecc10-2403sf-ecc1r5-4805sf-e+6cc10 lambdacc1r5-1212sf-ecc1r5-2403sf-ecc6-2412dfcc15cc25-2405sf-e PDF

    HFR8S12

    Contextual Info: HFR8S12 Glass Passivated Hyperfast Recovery Rectifier Voltage Range 1200 V Current 8.0 Ampere Features ¬ Fast switching for high efficiency ¬ Low noise ¬ Trr = 25ns ¬ Low reverse leakage current ¬ High voltage super FRD ¬ PFC application TO-220AC .057 1.45


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    hfr8s12o-220acmil-std-202feb-09 PDF

    DSA0037428

    Abstract: SEMH11
    Contextual Info: SEMH11 NPN Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit 4 • Two galvanic internal isolated Transistors 5 3 with good matching in one package 6 2 • Built in bias resistor (R1 =10kΩ, R2 =10kΩ)


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    semh11eha07174ot666feb-09-2004+1dsa0037428 PDF

    HFR8S12

    Contextual Info: HFR8S12F Glass Passivated Hyperfast Recovery Rectifier Voltage Range 1200 V Current 8.0 Ampere Features ¬ Fast switching for high efficiency ¬ Low noise ¬ Trr = 25ns ¬ Low reverse leakage current ¬ High voltage super FRD ¬ PFC application ITO-220AC 2


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    hfr8s12fito-220acmil-std-202feb-09+1hfr8s12 PDF

    Contextual Info: HFR8L06F Glass Passivated Hyperfast Recovery Rectifier Voltage Range 600 V Current 8.0 Ampere Features ¬ Fast switching for high efficiency ¬ Low noise ¬ Low VF ¬ Low reverse leakage current ¬ High voltage super FRD ¬ PFC application ITO-220AC 2 1 .053 1.35


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    hfr8l06fito-220acmil-std-202185ure+250mvp-pfeb-09 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-120201 xN60 MOSFET Ordering Number Change Issue Date Feb-09-2012 Page 1 of 1 變更主旨 TITLE : xN60系列取消銷售料號之檔次標示。 Remove bin code of ordering number for xN60 Power MOSFET.


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    ic-ppcn-120201feb-09-2012qr-0205-01 PDF

    R596

    Abstract: micromechanical
    Contextual Info: RADIALL TECHNICAL DATA SHEET R 596 - - - - - - S SM MTT P Poow weerr M Miiccrroo-S SP PD DTT w wiitthh 1100 G GH Hzz ccaappaabbiilliittiieess Issue : Feb-09-2006 An innovative and original « micro-mechanical » design allows the R596 SMT micro-relay to bring together


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    feb-09-2006r596micromechanical PDF

    V23993

    Abstract: A1035 EVA1035-H gps m 89 pin configuration V23993EVA1035E A1082 PEAK tray drawing gps nmea interface in atomic clock sirf gps GPS sirf
    Contextual Info: GPS Receiver A1035-E A Description of Vincotech’s GPS Smart Antenna Module A1035-E User’s Manual Version 1.3 Hardware Revision 01 Revision History Rev. 1.0 1.1 1.2 1.3 Date 05-19-08 06-30-08 11-03-08 02-18-09 mm-dd-yy V1.3 – Feb-09 Description Initial Draft – preliminary information


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    a1035-efeb-09eva1035-ev23993+9a1035eva1035-hgps m 89 pin configurationv23993eva1035ea1082peak tray drawinggps nmea interface in atomic clocksirf gpsgps sirf PDF

    MARKING WJ

    Abstract: DSA0037428
    Contextual Info: SEMH9 NPN Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit 4 • Two galvanic internal isolated Transistors 5 3 with good matching in one package 6 2 • Built in bias resistor (R1 =10kΩ, R2=47kΩ)


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    eha07174ot666feb-09-2004marking wj+1dsa0037428 PDF

    12v 400W

    Abstract: EFE300 EFE300-12-CNMDS EFE400-24-CNMDS EN61000-3-3 EN61000-4-12 U2Y004J
    Contextual Info: • High Efficiency • 5 in x 3 in / 6 in x 3 in footprint • No minimum load • Fits 1U applications • 400/530 Watts peak power for 10 seconds • 3 Year Warranty Key Market Segments & Applications EFE300 / EFE400 300/400 Watts, Ultra High Density AC-DC, digital power solution


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    efe300efe400264vac350vdc+9en61000-3-2800-lambda-4feb0912v 400wefe300-12-cnmdsefe400-24-cnmdsen61000-3-3en61000-4-12u2y004j PDF

    ACS 086

    Abstract: germanium transistor ac 128 acs sot-343 4ghz s parameters transistor s parameters 4ghz fa 5571 TRANSISTOR NPN 5GHz SOT 343 MARKING BF transistor k 620 silicon rf transistor s parameters up to 4ghz
    Contextual Info: BFP 620 NPN Silicon Germanium RF Transistor Preliminary data 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


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    vps05605ot-343-j100feb-09-2000+10acs 086germanium transistor ac 128acs sot-3434ghz s parameters transistors parameters 4ghzfa 5571transistor npn 5ghzsot 343 marking bftransistor k 620silicon rf transistor s parameters up to 4ghz PDF

    XFGIB100

    Contextual Info: S ch e m atic: LOWER ROW UPPER ROW E le ctric al S p e c i f i c a t i o n s : 25®C ISOLATION: 1500 Vrms TURNS RATIO: PRl/SEC 1CT:1CT ±2% OCL: 350uH MIN lOOKHz 100m V BmADC Rise Time: 1.75ns Max. INSERTION LOSS: -I.OdB MAX SIM Hz-IOO M Hz -1.5dB MAX 0 1 0 0 —125MHz


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    350uh100mv1mhz-100mhz125mhz+7-16db1-30mhz40mhz50mhz-10db100mhzxfgib100 PDF