FEB09 Search Results
FEB09 Datasheets Context Search
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Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC AUG ,2006. ALL RIGHTS RESERVED. R E V IS IO N S DW p LTR DESCRIPTION B D DATE DWN B.W s .c 1 1 FEB09 REVISED ECR—0 9 - 0 0 2 8 2 1 APVD D NOTES: |
OCR Scan |
feb09850pcs31mar2000 | |
DSA0037427
Abstract: SEMH10
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semh10eha07174ot666feb-09-2004+1 | |
marking WM
Abstract: SEMB11 DSA0037426
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semb11eha07173ot666feb-09-2004+2 | |
h569-445
Abstract: ED83368-30 CC848846287 BDFB H569445 CC109144812 PBM7900 current monitor panel meter PBM7600FRA 1-800-THE-1PWR
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feb09h569-445ed83368-30cc848846287+7 | |
2030RContextual Info: BF 2030R Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Drain AGC HF Input G2 G1 R G1 HF Output + DC GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution! |
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2030reha07461ot-143rfeb-09-2001 | |
A1015
Abstract: NMEA GPS microsoft ballpoint mouse ballpoint NMEA GPS usb A1035-H A1015 equivalent gps mouse Receiver service manual schematics tegra
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eva1035-ea1035-eeva1082-afeb-09+10 | |
A1035-H
Abstract: vincotech GPS Antenna gps antenna external gps receiver UART gps A1080 EVA1035-H NMEA-0183
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eva1035-ha1035-heva1084-afeb-09+7 | |
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Contextual Info: BF 2030 Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 5V 2 Drain AGC HF Input G2 G1 R G1 HF Output + DC 1 VPS05178 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution! |
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vps05178eha07461ot-143feb-09-2001 | |
LS2533
Abstract: LS100 LS150 LS25 LS50 LS75 LS15-05 LS150-12
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300vac800-lambda-4feb09ls2533+7 | |
LAMBDA
Abstract: CE-1050 lambda 128 Lambda diode PEAK tray drawing
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ce-1050feb09lambdalambda 128+2 | |
CC10-2412DF-E
Abstract: cc10-2403sf-e CC1R5-4805SF-E cc10 lambda CC1R5-1212SF-E CC1R5-2403SF-E CC6-2412DF CC15 cc25-2405sf-e
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feb09cc10-2412df-ecc10-2403sf-ecc1r5-4805sf-e+6 | |
HFR8S12Contextual Info: HFR8S12 Glass Passivated Hyperfast Recovery Rectifier Voltage Range 1200 V Current 8.0 Ampere Features ¬ Fast switching for high efficiency ¬ Low noise ¬ Trr = 25ns ¬ Low reverse leakage current ¬ High voltage super FRD ¬ PFC application TO-220AC .057 1.45 |
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hfr8s12o-220acmil-std-202feb-09 | |
DSA0037428
Abstract: SEMH11
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semh11eha07174ot666feb-09-2004+1 | |
HFR8S12Contextual Info: HFR8S12F Glass Passivated Hyperfast Recovery Rectifier Voltage Range 1200 V Current 8.0 Ampere Features ¬ Fast switching for high efficiency ¬ Low noise ¬ Trr = 25ns ¬ Low reverse leakage current ¬ High voltage super FRD ¬ PFC application ITO-220AC 2 |
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hfr8s12fito-220acmil-std-202feb-09+1 | |
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Contextual Info: HFR8L06F Glass Passivated Hyperfast Recovery Rectifier Voltage Range 600 V Current 8.0 Ampere Features ¬ Fast switching for high efficiency ¬ Low noise ¬ Low VF ¬ Low reverse leakage current ¬ High voltage super FRD ¬ PFC application ITO-220AC 2 1 .053 1.35 |
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hfr8l06fito-220acmil-std-202185ure+2 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-120201 xN60 MOSFET Ordering Number Change Issue Date Feb-09-2012 Page 1 of 1 變更主旨 TITLE : xN60系列取消銷售料號之檔次標示。 Remove bin code of ordering number for xN60 Power MOSFET. |
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ic-ppcn-120201feb-09-2012qr-0205-01 | |
R596
Abstract: micromechanical
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feb-09-2006r596micromechanical | |
V23993
Abstract: A1035 EVA1035-H gps m 89 pin configuration V23993EVA1035E A1082 PEAK tray drawing gps nmea interface in atomic clock sirf gps GPS sirf
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a1035-efeb-09eva1035-ev23993+9 | |
MARKING WJ
Abstract: DSA0037428
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eha07174ot666feb-09-2004marking wj+1 | |
12v 400W
Abstract: EFE300 EFE300-12-CNMDS EFE400-24-CNMDS EN61000-3-3 EN61000-4-12 U2Y004J
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efe300efe400264vac350vdc+9 | |
ACS 086
Abstract: germanium transistor ac 128 acs sot-343 4ghz s parameters transistor s parameters 4ghz fa 5571 TRANSISTOR NPN 5GHz SOT 343 MARKING BF transistor k 620 silicon rf transistor s parameters up to 4ghz
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vps05605ot-343-j100feb-09-2000+10 | |
XFGIB100Contextual Info: S ch e m atic: LOWER ROW UPPER ROW E le ctric al S p e c i f i c a t i o n s : 25®C ISOLATION: 1500 Vrms TURNS RATIO: PRl/SEC 1CT:1CT ±2% OCL: 350uH MIN lOOKHz 100m V BmADC Rise Time: 1.75ns Max. INSERTION LOSS: -I.OdB MAX SIM Hz-IOO M Hz -1.5dB MAX 0 1 0 0 —125MHz |
OCR Scan |
350uh100mv1mhz-100mhz125mhz+7 | |