FE SOT Search Results

I/ecg simulator circuit

Contextual Info: ADS1298ECG-FE/ADS1198ECG-FE ECG Front-End Performance Demonstration Kit User's Guide Literature Number: SBAU171C May 2010 – Revised September 2012 Contents . 7 . 7

Contextual Info: PM5371 TUDX DATA SHEET ISSUE 6 SONET/SDH TRIBUTARY UNIT CROSS CONNECT :0 9: 53 AM PMC-920525 ,0 3M ay ,2 00 4 11 PM5371 fe fo n Mo nd ay TUDX DATA SHEET Do wn lo ad ed by ef we fe fe fo fe SONET/SDH TRIBUTARY UNIT CROSS CONNECT ISSUE 6: SEPTEMBER 1998 PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA, INC., AND FOR ITS CUSTOMERS’ INTERNAL USE

Transistor c221

Contextual Info: STC221F NPN Silicon Transistor PIN Connection Descriptions • General purpose am plifier • High current applicat ion Features • High h FE : h FE= 160~ 320 • Low collect or sat urat ion volt age : VCE sat = 0.5V( MAX.) SOT-89 Ordering Information

2SA1832

Abstract: 2SC4738 SC-75
Contextual Info: 2SC4738 NPN TRANSISTOR 3 P b Lead Pb -Free 1 2 FEATURES: High voltage and high current Excellent h FE linearity High h FE Complementary to 2SA1832 SOT-523(SC-75) MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Value Units Collector-Base Voltage VCBO

Contextual Info: 2SC4116 General Purpose Transistor NPN Silicon COLLECTOR 3 3 P b Lead Pb -Free 1 1 BASE 2 2 EMITTER FEATURES * High voltage and high current * Excellent h FE linearity * High h FE * Low noise * Complementary to 2SA1586 SOT-323(SC-70) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: 2SA1981S PNP Silicon Transistor Description PIN Connection • Audio power am plifier applicat ion Features • High h FE : h FE= 100~ 320 • Com plem ent ary pair wit h 2SC5344S C B E Ordering Information Type N o. 2SA1981S Device Code SOT-23 M a r k in g

Contextual Info: AN11338 BGU8011 GNSS front end evaluation board Rev. 1 — 29 May 2013 Application note Document information Info Content Keywords BGU8011, GNSS, FE, LNA Abstract This document explains the BGU8011 GNSS FE evaluation board Ordering info Board-number: OM7842

Contextual Info: AN11317 BGU8009 GNSS front end evaluation board Rev. 1 — 5 March 2013 Application note Document information Info Content Keywords BGU8009, GNSS, FE, LNA Abstract This document explains the BGU8009 GNSS FE evaluation board Ordering info Board-number: OM7824

Contextual Info: ฀ 2SC5344U NPN Silicon Transistor Description PIN Connection • Audio power am plifier applicat ion Features 3 • High h FE : h FE= 100~ 320 • Com plem ent ary pair wit h 2SA1981U 1 2 Ordering Information Type N O. SOT-323 M a r k in g Pa ck a ge Code

Contextual Info: 2SA1981SF PNP Silicon Transistor Description PIN Connection • Audio power am plifier applicat ion 3 Features • High h FE : h FE= 100~ 320 • Com plem ent ary pair wit h 2SC5344SF 1 2 Ordering Information Type N O. M a r k in g SOT- 2 3 F Pa ck a ge Code

PT3904

Contextual Info: SOT-23/TO-236AB ELECTRICAL CHARACTERISTICS at T . = 25°C V BR CBO V (BR)CEO V(BR)EBO Max. @ vCB Device Type M arking (V) (V) (V) VCE(sat) DC C urrent Gain ^CBO h FE t>FE @ lc @ VCE Max. @ lc (nA) (V) Min. Max. (mA) (V) (V) (mA) 't Min. @ lc (MHz) (mA) ts'

ecg msp430

Abstract: I/ecg simulator circuit
Contextual Info: ADS1x9xECG-FE Demonstration Kit User's Guide Literature Number: SLAU384A December 2011 – Revised April 2012 Contents . 5 . 5

Contextual Info: 2SC5344S NPN Silicon Transistor Description • Audio power am plifier applicat ion PIN Connection Features • High h FE : h FE= 100~ 320 • Com plem ent ary pair wit h 2SA1981S C Ordering Information Type N o. 2SC5344S Device Code B M a r k in g Pa ck a ge Code

IMSA

Abstract: 7818 powerful XC6221 5652 XC6221A IMC6221 XC6221B
Contextual Info: O N /O F F ? f ^ , jg g flS E S R fe g lflitS i® te ffiiH S Ig l X C 6 2 2 l l ^ l J 3i * i r i i | f S . f K l i ;t ^ i i S , S S # € E S R l i 1W . * f f l C M 0 S X ? ; 4 j ic K U SfE g LD O fe fE J t t # , Pi S | S fc iS # # i& fflR i& lfr, ,a » # f

Contextual Info: SOT89 PNP SILICON POWER FCX718 SWITCHING TRANSISTOR ISSSUE 1 - DECEMBER 1998 FE A TU R E S * 2W POWER D IS S IP A T IO N * 6A Peak Pulse C urrent * E xcellen t H FE C haracteristics up to 6A m p s * E x tre m e ly Lo w S a tu ra tio n V o lta g e E.g. 1 6 m v T y p .

ZUMT617

Contextual Info: Super323 SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT617 ISSUE 1 - SEPTEMBER 1998 FE A TU R E S * 500m W POWER DISSIPATION * lc C O N T I.5 A * * 5 A P eak P u ls e C u rre n t E x c e lle n t H FE C h a ra c te ris tic s U p T o 5 A (p u ls e d )

ADS1298REVM

Abstract: 12 leads ECG simulator circuit diagram jp36 diode I/ecg simulator circuit
Contextual Info: ADS1298RECG-FE ECG Front-End Performance Demonstration Kit User's Guide Literature Number: SBAU181A March 2011 – Revised September 2012 Contents . 7

FCX649

Abstract: FCX749 lem lc 300
Contextual Info: FCX649 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FE A T U R E S * * F A S T SW ITCH IN G . LOW S A T U R A TIO N V O LTA G E . * * H fe UP TO 6A PU LSED . 2 A lc CO N TIN U O U S. * CO M P LEM EN TA R Y T YP E - FCX749. PAR TM A R KIN G D E TA ILS - N3

MMB0 REV D ads1298

Abstract: ADS1298 MMB0 REV D ADS1298ECG-FE 12 leads ECG simulator circuit diagram Philips ECG electrode DB15 CONNECTOR ECG avr circuit diagram SBAU171B ECG matlab ecg simulator circuit
Contextual Info: ADS1298ECG-FE ECG Front-End Performance Demonstration Kit User's Guide Literature Number: SBAU171B May 2010 – Revised March 2012 Contents 8 . 7 . 7

fzt968

Abstract: LB1400
Contextual Info: SOT223 PNP SIUCON PLANAR HIGH CURRENT HIGH PERFORMANCE POWER TRANSISTOR FZT968 ISSUE 3 - OCTOBER L- -FE A T U R E S * * * Extrem ely low equivalent on-resistance; RCE(sat) 44mfi at 5A

Contextual Info: FS8205-DS-14_EN Datasheet AUG 2010 Pr RT Re op UN fe ert E’ re ie nc s e O nl y REV. 1.4 FS8205 Fo r FO Dual N-Channel Enhancement Mode Power MOSFET FS8205 Fo r FO Pr RT Re op UN fe ert E’ re ie nc s e O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司

marking code p07 sot89

Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
Contextual Info: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING

marking DW01

Abstract: DW01* MARKING dw01 sot-23-6
Contextual Info: DW01+-DS-26_EN Datasheet JUL 2010 Pr RT Re op UN fe ert E’ re ie nc s e O nl y REV. 2.6 DW01+ Fo r FO One Cell Lithium-ion/Polymer Battery Protection IC DW01+ Fo r FO Pr RT Re op UN fe ert E’ re ie nc s e O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司

Contextual Info: FS8853-DS-24_EN Datasheet MAY 2010 Pr RT Re op UN fe ert E’ re ie nc s e O nl y REV. 2.4 FS8853 Fo r FO 300 mA LDO Linear Regulator FS8853 Fo r FO Pr RT Re op UN fe ert E’ re ie nc s e O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司