135MO Search Results

Contextual Info: XRP7604 1A 29V Non-Sync. Buck High Power LED Driver March 2009 Rev. 1.0.0 GENERAL DESCRIPTION APPLICATIONS The XRP7604 is a non-synchronous voltage mode PWM step down converter with integrated high side FET optimized to drive high power LEDs at up to 1A of continuous

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Luxeon K2 driver schematic

Abstract: ceramic capacitor 1uf/50v SP7600 XRP7603 1N4148 B340A XRP7604E
Contextual Info: XRP7604 1A 29V Non-Sync. Buck High Power LED Driver March 2009 Rev. 1.0.0 GENERAL DESCRIPTION APPLICATIONS The XRP7604 is a non-synchronous voltage mode PWM step down converter with integrated high side FET optimized to drive high power LEDs at up to 1A of continuous

P channel MOSFET 10A

Abstract: STM5853QF8RG 77m-ohm
Contextual Info: STM5853 P Channel Mode MOSFET with Schottky -3.6A DESCRIPTION STM5853 is the P-Channel logic enhancement mode power field effect transistors with Schottky Diode. The MOSFET is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state

ZUMT617

Contextual Info: Super323 SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT617 ISSUE 1 - SEPTEMBER 1998 FE A TU R E S * 500m W POWER DISSIPATION * lc C O N T I.5 A * * 5 A P eak P u ls e C u rre n t E x c e lle n t H FE C h a ra c te ris tic s U p T o 5 A (p u ls e d )

Contextual Info: STP6506 Dual P Channel Enhancement Mode MOSFET -2.8A DESCRIPTION The STC6506 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching

via vn800

Abstract: PS-2403D F-120-9A VN800 VDMOSFET 2403D AN1351 IEC801-6 L6376 VN340
Contextual Info: AN1351 APPLICATION NOTE VIPower AND BCDmultipower: MAKING LIFE EASIER WITH ST’s HIGH SIDE DRIVERS P. Laupheimer 1. ABSTRACT Industrial environments need high side switches in applications like PLC programmable logic controllers as actuators of lamps, valves and relays. STMicroelectronics is covering the complete

via vn800

Abstract: 2403d keytek VDMOSFET VN340 L6376 AN358 design rules AN1351 VN800 IEC61000-4-4
Contextual Info: AN1351 APPLICATION NOTE VIPower AND BCDmultipower: MAKING LIFE EASIER WITH ST’s HIGH SIDE DRIVERS P. Laupheimer 1. ABSTRACT Industrial environments need high side switches in applications like PLC programmable logic controllers as actuators of lamps, valves and relays. STMicroelectronics is covering the complete