105MOHM Search Results

105MOHM Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
CSD25481F4T		Texas Instruments	-20V, P ch NexFET MOSFET™, single LGA 0.6x1.0, 105mOhm 3-PICOSTAR -55 to 150
CSD25481F4		Texas Instruments	-20V, P ch NexFET MOSFET™, single LGA 0.6x1.0, 105mOhm 3-PICOSTAR -55 to 150

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Vishay Intertechnologies IHLP2525CZER100M01 Power Inductors - SMD 10uH 20%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI ()	IHLP2525CZER100M01	Reel	98,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.23	Buy Now
	IHLP2525CZER100M01	Cut Tape	3,970		10	1 - 10 $0.88 100 $0.88 1000 $0.88 10000 $0.88	Buy Now
Vishay Intertechnologies IHLP2525CZER100MA1 Power Inductors - SMD 10uH 20% AEC-Q200
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	IHLP2525CZER100MA1	Reel	80,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.45	Buy Now
Eaton Corporation DR127-680-R Power Inductors - SMD 68uH 4.44A 0.105ohms
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	DR127-680-R	Reel	14,000		350	1 - 10 - 100 - 1000 $0.49 10000 $0.41	Buy Now
Vishay Intertechnologies SIB433EDK-T1-GE3 MOSFETs -20V Vds 8V Vgs PowerPAK SC-75
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	SIB433EDK-T1-GE3	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.16	Buy Now
Vishay Intertechnologies IHLM2525CZER100M01 Power Inductors - SMD 10uH 20%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	IHLM2525CZER100M01	Reel	6,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.62	Buy Now

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105MOHM Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
5a6 zener diode Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415 Contextual Info: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical	Original	Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415	PDF
MOSFET P channel SOT-23 Abstract: MOSFET P-channel SOT-23 mosfet vgs 5v P-Channel MOSFET 12V SOT 23 sot-23 P-Channel MOSFET ST2305 Contextual Info: P Channel Enchancement Mode MOSFET ST2305 -3.5A DESCRIPTION The ST2305 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	Original	ST2305 ST2305 OT-23-3L -10V/-3 50m-ohm 70m-ohm -10V/-2rn-On OT-23-3L MOSFET P channel SOT-23 MOSFET P-channel SOT-23 mosfet vgs 5v P-Channel MOSFET 12V SOT 23 sot-23 P-Channel MOSFET	PDF
tag 8442 Abstract: paladin 172 410 rg213 au COAXIAL CABLE raychem termination kit PRICE filotex rg213 NSR 2051 PL155-47 2576 cable filotex RG58 filotex et Contextual Info: 1753 Technical portal and online community for Design Engineers - www.element-14.com Connectors - RF Coaxial Page Adaptors and Accessories . . . . . . . . . . . . . . . . . . BNC Economy Series . . . . . . . . . . . . . . . . . . . . . . BNC Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 14x14mm: tag 8442 paladin 172 410 rg213 au COAXIAL CABLE raychem termination kit PRICE filotex rg213 NSR 2051 PL155-47 2576 cable filotex RG58 filotex et	PDF
n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Abstract: ST3402 MOSFET SOT-23 mosfet vgs 5v Contextual Info: N Channel Enhancement Mode MOSFET ST3402 4.0A DESCRIPTION The ST3402 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance.	Original	ST3402 ST3402 OT-23-3L 50m-ohm 65m-ohm OT-23-3L n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR MOSFET SOT-23 mosfet vgs 5v	PDF
ST3403 Contextual Info: P Channel Enchancement Mode MOSFET ST3403 -3.5A DESCRIPTION The ST3403 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	Original	ST3403 ST3403 OT-23-3L -30V/-2 105m-ohm 115m-ohm -4OT-23-3L	PDF
Contextual Info: STN6562 Dual N Channel Enhancement Mode MOSFET 4.0A DESCRIPTION The STN6562 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	Original	STN6562 STN6562 65mohm 75mohm 105mohm STP6562	PDF
Contextual Info: STP6506 Dual P Channel Enhancement Mode MOSFET -2.8A DESCRIPTION The STC6506 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching	Original	STP6506 STC6506 -30V/-2 105mohm STP6506	PDF
MOSFET NOTEBOOK Abstract: ST2304 25a surface mountain Contextual Info: N Channel Enchancement Mode MOSFET ST2304 2.5A DESCRIPTION The ST2304 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	Original	ST2304 ST2304 OT-23-3L 70m-ohm 105m-ohm OT-23-3L MOSFET NOTEBOOK 25a surface mountain	PDF