105MOHM Search Results

105MOHM Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
CSD25481F4T		Texas Instruments	-20V, P ch NexFET MOSFET™, single LGA 0.6x1.0, 105mOhm 3-PICOSTAR -55 to 150
CSD25481F4		Texas Instruments	-20V, P ch NexFET MOSFET™, single LGA 0.6x1.0, 105mOhm 3-PICOSTAR -55 to 150

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Vishay Intertechnologies IHLP2525CZER100M01 Power Inductors - SMD 10uH 20%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI ()	IHLP2525CZER100M01	Reel	92,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.24	Buy Now
	IHLP2525CZER100M01	Cut Tape	3,970		10	1 - 10 $0.80 100 $0.80 1000 $0.80 10000 $0.80	Buy Now
Vishay Intertechnologies IHLP2525CZER100MA1 Power Inductors - SMD 10uH 20% AEC-Q200
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	IHLP2525CZER100MA1	Reel	80,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.47	Buy Now
Murata Manufacturing Co Ltd BLM15PE121SH1D Ferrite Beads 120 OHMS a. 100 MHZ Alternate Sizing Guide Below
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	BLM15PE121SH1D	Reel	30,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.08	Buy Now
Eaton Corporation DR127-680-R Power Inductors - SMD 68uH 4.44A 0.105ohms
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	DR127-680-R	Reel	12,950		350	1 - 10 - 100 - 1000 $0.49 10000 $0.42	Buy Now
Vishay Intertechnologies IHLP1616BZER4R7M11 Power Inductors - SMD 4.7uH 20%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI ()	IHLP1616BZER4R7M11	Reel	12,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.36	Buy Now
	IHLP1616BZER4R7M11	Cut Tape	10		10	1 - 10 $0.75 100 $0.75 1000 $0.75 10000 $0.75	Buy Now

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105MOHM Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
5a6 zener diode Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415 Contextual Info: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical	Original	Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415	PDF
MOSFET P channel SOT-23 Abstract: MOSFET P-channel SOT-23 mosfet vgs 5v P-Channel MOSFET 12V SOT 23 sot-23 P-Channel MOSFET ST2305 Contextual Info: P Channel Enchancement Mode MOSFET ST2305 -3.5A DESCRIPTION The ST2305 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	Original	ST2305 ST2305 OT-23-3L -10V/-3 50m-ohm 70m-ohm -10V/-2rn-On OT-23-3L MOSFET P channel SOT-23 MOSFET P-channel SOT-23 mosfet vgs 5v P-Channel MOSFET 12V SOT 23 sot-23 P-Channel MOSFET	PDF
tag 8442 Abstract: paladin 172 410 rg213 au COAXIAL CABLE raychem termination kit PRICE filotex rg213 NSR 2051 PL155-47 2576 cable filotex RG58 filotex et Contextual Info: 1753 Technical portal and online community for Design Engineers - www.element-14.com Connectors - RF Coaxial Page Adaptors and Accessories . . . . . . . . . . . . . . . . . . BNC Economy Series . . . . . . . . . . . . . . . . . . . . . . BNC Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 14x14mm: tag 8442 paladin 172 410 rg213 au COAXIAL CABLE raychem termination kit PRICE filotex rg213 NSR 2051 PL155-47 2576 cable filotex RG58 filotex et	PDF
n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Abstract: ST3402 MOSFET SOT-23 mosfet vgs 5v Contextual Info: N Channel Enhancement Mode MOSFET ST3402 4.0A DESCRIPTION The ST3402 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance.	Original	ST3402 ST3402 OT-23-3L 50m-ohm 65m-ohm OT-23-3L n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR MOSFET SOT-23 mosfet vgs 5v	PDF
ST3403 Contextual Info: P Channel Enchancement Mode MOSFET ST3403 -3.5A DESCRIPTION The ST3403 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	Original	ST3403 ST3403 OT-23-3L -30V/-2 105m-ohm 115m-ohm -4OT-23-3L	PDF
Contextual Info: STN6562 Dual N Channel Enhancement Mode MOSFET 4.0A DESCRIPTION The STN6562 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	Original	STN6562 STN6562 65mohm 75mohm 105mohm STP6562	PDF
Contextual Info: STP6506 Dual P Channel Enhancement Mode MOSFET -2.8A DESCRIPTION The STC6506 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching	Original	STP6506 STC6506 -30V/-2 105mohm STP6506	PDF
MOSFET NOTEBOOK Abstract: ST2304 25a surface mountain Contextual Info: N Channel Enchancement Mode MOSFET ST2304 2.5A DESCRIPTION The ST2304 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	Original	ST2304 ST2304 OT-23-3L 70m-ohm 105m-ohm OT-23-3L MOSFET NOTEBOOK 25a surface mountain	PDF