FDMS Search Results

mosfet L 3055

Contextual Info: FDMS86150 N-Channel PowerTrench MOSFET 100 V, 60 A, 4.85 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and

FDMS7658

Contextual Info: FDMS7658AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 1.9 mΩ Features General Description The FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest

Contextual Info: FDMS8090 PowerTrench Power Stage 100 V Symmetric Dual N-Channel MOSFET General Description Features This device includes two fast switching Qgd minimized 100V N-Channel MOSFETs in a dual Power 56 (5 mm X 6 mm MLP) package. The package is enhanced for exceptional thermal

FDMS86252

Abstract: rca 505 202tJ
Contextual Info: FDMS86252 N-Channel PowerTrench MOSFET 150 V, 16 A, 51 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

FDMS2506SDC

Contextual Info: FDMS2506SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.45 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced

c151A

Abstract: FDMS3602S
Contextual Info: Preliminary Datasheet FDMS3602S Dual N-Channel PowerTrench MOSFET N-Channel: 25 V, 30 A, 5.6 mΩ N-Channel: 25 V, 40 A, 2.2 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A

FDMS86201

Abstract: FDMS86201/pdf/MAX13042EETD -datasheet
Contextual Info: Preliminary Datasheet FDMS86201 N-Channel PowerTrench MOSFET 120 V, 35 A, 11.5 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

FDMS8692

Contextual Info: FDMS8692 tm N-Channel PowerTrench MOSFET 30V, 28A, 9.0mΩ Features General Description „ Max rDS on = 9.0mΩ at VGS = 10V, ID = 12A The FDMS8692 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest

FDMS86101

Contextual Info: FDMS86101 N-Channel PowerTrench MOSFET 100 V, 49 A, 8 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and

FDMS6681Z

Abstract: RCA 7803
Contextual Info: FDMS6681Z P-Channel PowerTrench MOSFET -30 V, -49 A, 3.5 mΩ Features General Description „ Max rDS on = 3.5 mΩ at VGS = -10 V, ID = -21.1 A The FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package

Contextual Info: FDMS86201 N-Channel Shielded Gate PowerTrench MOSFET 120 V, 49 A, 11.5 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been

Contextual Info: FDMS015N04B N-Channel PowerTrench MOSFET 40 V, 100 A, 1.5 mΩ Features Description • RDS on = 1.13 mΩ (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Contextual Info: FDMS039N08B N-Channel PowerTrench MOSFET 80 V, 100 A, 3.9 mΩ Features Description • RDS on = 3.2 mΩ (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored

Contextual Info: FDMS030N06B N-Channel PowerTrench MOSFET 60 V, 100 A, 3 mΩ Features Description • RDS on = 2.4 mΩ (Typ.) @ VGS = 10 V, ID = 50 A • Fast Switching Speed This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has

Contextual Info: FDMS5360L_F085 N-Channel Power Trench MOSFET 60V, 60A, 8.5mΩ Features „ Typ rDS on = 6.5mΩ at VGS = 10V, ID = 60A „ Typ Qg(tot) = 64nC at VGS = 10V, ID = 60A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control

NS4263

Abstract: FDMS5672 106A
Contextual Info: FDMS5672 N-Channel UltraFET Trench MOSFET 60V, 22A, 11.5mΩ Features tm General Description „ Max rDS on = 11.5mΩ at VGS = 10V, ID = 10.6A UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge,

Contextual Info: FDMS8672AS N-Channel tm SyncFETTM PowerTrench 30V, 28A, 5.0m: Features General Description „ Max rDS on = 5.0m: at VGS = 10V, ID = 18A The FDMS8672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and

Contextual Info: FDMS2380 Dual Integrated Solenoid Driver Features General Description ̈ 5A, 60V Load Clamp The FDMS2380 is an intelligent low side driver with built in recirculation and demagnetization circuits designed specifically for driving inductive loads. The inputs are

Contextual Info: FDMS7606 Dual N-Channel PowerTrench MOSFET Q1: 30 V, 12 A, 11.4 mΩ Q2: 30 V, 22 A, 11.6 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 11.4 mΩ at VGS = 10 V, ID = 11.5 A dual MLP package. The switch node has been internally

Contextual Info: FDMS2502SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.2 mΩ Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced

Contextual Info: FDMS7694 N-Channel PowerTrench MOSFET 30 V, 9.3 mΩ Features General Description „ Max rDS on = 9.3 mΩ at VGS = 10 V, ID = 13.2 A „ Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node

FDMS7558S

Contextual Info: FDMS7558S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.25 mΩ Features General Description „ Max rDS on = 1.25 mΩ at VGS = 10 V, ID = 32 A The FDMS7558S has been designed to minimize losses in power conversion application. Advancements in both silicon and

FDMS7560S

Contextual Info: FDMS7560S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.45 m: Features General Description The FDMS7560S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest

FDMS8320LDC

Abstract: FDMS8320 l41b
Contextual Info: FDMS8320LDC N-Channel Dual CoolTM Power Trench MOSFET 40 V, 130 A, 1.1 mΩ Features General Description „ Max rDS on = 1.1 mΩ at VGS = 10 V, ID = 44 A „ Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 37 A This N-Channel MOSFET is produced using Fairchild