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    FDMS86252 Search Results

    FDMS86252 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDMS86252
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 16A POWER56 Original PDF 7
    FDMS86252L
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 8-MLP Original PDF 7
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    FDMS86252 Price and Stock

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    onsemi FDMS86252L

    MOSFET N-CH 150V 4.4A 8PQFN
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    DigiKey () FDMS86252L Digi-Reel 5,693 1
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    FDMS86252L Tape & Reel 3,000
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    Rochester Electronics FDMS86252L 5,470 1
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    Avnet Silica FDMS86252L 3,000 18 Weeks 3,000
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    onsemi FDMS86252

    MOSFET N-CH 150V 4.6A/16A 8PQFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () FDMS86252 Cut Tape 4,369 1
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    FDMS86252 Digi-Reel 4,369 1
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    FDMS86252 Tape & Reel 3,000 3,000
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    FDMS86252 Tape & Reel 981
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    Mouser Electronics FDMS86252 3,391
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    FDMS86252 1,199 6
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    Future Electronics () FDMS86252 Reel 3,000
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    FDMS86252 Reel 17 Weeks 3,000
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    Onlinecomponents.com FDMS86252
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    Quest Components () FDMS86252 59,920
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    FDMS86252 59,920
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    FDMS86252 137
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    Avnet Asia FDMS86252 17 Weeks 3,000
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    Fairchild Semiconductor Corporation FDMS86252

    Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A
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    Win Source Electronics FDMS86252 64,100
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    FDMS86252 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDMS86252

    Abstract: rca 505 202tJ
    Contextual Info: FDMS86252 N-Channel PowerTrench MOSFET 150 V, 16 A, 51 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original
    FDMS86252 FDMS86252 rca 505 202tJ PDF

    Contextual Info: FDMS86252 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 16 A, 51 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original
    FDMS86252 PDF

    Contextual Info: FDMS86252L N-Channel Shielded Gate PowerTrench MOSFET 150 V, 12 A, 56 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original
    FDMS86252L PDF

    Contextual Info: FDMS86252 N-Channel PowerTrench MOSFET 150 V, 16 A, 51 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original
    FDMS86252 PDF

    Contextual Info: FDMS86252L N-Channel Shielded Gate PowerTrench MOSFET 150 V, 12 A, 56 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original
    FDMS86252L PDF