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    FDMS7694 Datasheets (1)

    Fairchild Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDMS7694
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V POWER56 Original PDF 7
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    onsemi FDMS7694

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    Fairchild Semiconductor Corporation FDMS7694

    Trans MOSFET N-CH Si 30V 13.2A 8-Pin PQFN EP T/R
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    FDMS7694 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FDMS7694 N-Channel PowerTrench MOSFET 30 V, 9.3 mΩ Features General Description „ Max rDS on = 9.3 mΩ at VGS = 10 V, ID = 13.2 A „ Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		fdms7694 PDF

    Contextual Info: FDMS7694 N-Channel PowerTrench MOSFET 30 V, 9.5 mΩ Features General Description „ Max rDS on = 9.5 mΩ at VGS = 10 V, ID = 13.2 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or


    Original     		fdms7694 PDF

    FDMS7694

    Abstract: PF353
    Contextual Info: FDMS7694 N-Channel PowerTrench MOSFET 30 V, 8 mΩ Features General Description „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 14 A „ Max rDS(on) = 13 mΩ at VGS = 4.5 V, ID = 11 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		fdms7694pf353 PDF

    FDMS7694

    Abstract: V1522
    Contextual Info: FDMS7694 N-Channel PowerTrench MOSFET 30 V, 9.5 mΩ Features General Description „ Max rDS on = 9.5 mΩ at VGS = 10 V, ID = 13.2 A „ Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 11 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		fdms7694v1522 PDF

    Contextual Info: FDMS7694 N-Channel PowerTrench MOSFET 30 V, 9.5 mΩ Features General Description ̈ Max rDS on = 9.5 mΩ at VGS = 10 V, ID = 13.2 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or


    Original     		fdms7694 PDF