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    FDD603AL Search Results

    FDD603AL Datasheets (3)

    Fairchild Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDD603AL
    Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF 108.04KB 5
    FDD603AL
    Fairchild Semiconductor N-Channel, Logic Level Field Effect Transistor Original PDF 238.78KB 8
    FDD603AL
    Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF 232.64KB 4

    FDD603AL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDD603AL

    Contextual Info: FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This


    Original
    fdd603al PDF

    603AL

    Abstract: marking 603AL transistor
    Contextual Info: EMI C O N D U C T O R tm FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, D M O S technology. This


    OCR Scan
    fdd603al603almarking 603al transistor PDF

    CBVK741B019

    Abstract: F63TNR FDD603AL FDD6680
    Contextual Info: FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This


    Original
    fdd603alcbvk741b019f63tnrfdd6680 PDF

    1B marking transistor

    Abstract: st ld 33 FDD603AL transistor themal
    Contextual Info: E M IC O N D U C T O R tm FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T his N-Channel logic level enhancem ent m ode power fie ld e ffe c t tra n s is to r is produced using F a irc h ild ’s proprietary, high cell density, DM OS technology. This


    OCR Scan
    fdd603al1b marking transistorst ld 33transistor themal PDF

    SS*2n60b

    Abstract: FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A
    Contextual Info: Discrete MOSFET TO-252 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-252(DPAK) N-Channel FDD3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDD6512A 20 Single - 0.021 0.031


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    o-252fdd3706fdd6512afdd6530a+13rfd20n03smfdd6676isl9n306ad3stfdd6672afdd66ss*2n60bfdd5614pfqd7p20sfr9224fqd14n15irfr420ama8630mosfet to-252 PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


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    ao4405ao4407ao4408ao4409+16ao4410ao4411ao4413ao4415ao4422ao4700irf1830girf1830transistor irf1830gapm2054n equivalentapm2054nap85l02hap70n03s2sk3683ap70l02h2sk2696 PDF

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Contextual Info: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


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    sc70-6ot-23fdr8321lfdr8521l+13fdfs2p106afdfs2p103fdfs2p102ssp6n60airf650irf540 mosfet with maximum vds 12vssp2n60bsss7n60bssr2955irfs630assp4n60asss3n90airf634a PDF