FCP2 Search Results

11A 650V MOSFET

Abstract: FCP22N60N FCPF22N60NT
Contextual Info: SupreMOSTM FCP22N60N / FCPF22N60NT tm N-Channel MOSFET 600V, 22A, 0.165Ω Features Description • RDS on = 0.140Ω ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling

FCP20N60

Abstract: FCPF20N60 p channel mosfet 100v 600v 10A ultra fast recovery diode Mosfet 600V, 20A
Contextual Info: SuperFET TM FCP20N60 / FCPF20N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

Contextual Info: FCP25N60N N-Channel SupreMOS MOSFET 600 V, 25 A, 125 mΩ Features Description • RDS on = 107 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from

FCP25N60N

Abstract: F102 DIODE 83A mosfet 600V 25A
Contextual Info: SupreMOS FCP25N60N_F102 TM tm N-Channel MOSFET 600V, 25A, 0.125Ω Features Description • RDS on = 0.107Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling

Contextual Info: SuperFET II FCP260N60E / FCPF260N60E 600V N-Channel MOSFET Features Description ® SuperFET II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower

Contextual Info: FCP22N60N / FCPF22N60NT N-Channel SupreMOS MOSFET 600 V, 22 A, 165 mΩ Features Description o The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction SJ technology employing a deep trench filling process that differentiates it from

FCP22E

Abstract: datasheet 50K potentiometer 10K potentiometer endless potentiometer 6mm 20mm
Contextual Info: LOW-COST ITEM U.S.A. PAT. No.4400687 U.K. PAT. No.2087160 F.R.G. PAT. No.3136765 FRANCE PAT. No.8118538 HONGKONG PAT. No.751 of 1984 SINGAPORE PAT. No.372/84 MODEL FCP22E Conductive Plastic Bushingmount ●Standard Dimensions 22±1 22±1 7.9±0.5 6 -0.05

Philips MF1 IC S50

Abstract: Philips Mifare 1 S50 mf1 s50 Mifare MF1 S50 Specification FCP2 Flip Chip Package FCP2 Philips Mifare 1 S50 specifications MF1 IC S50 mifare s50 mifare s50 MIFARE
Contextual Info: INTEGRATED CIRCUITS ADDENDUM MF1 FCP2 S50 Flip Chip Package Specification Product Specification Revision 3.1 PUBLIC Philips Semiconductors October 2004 Philips Semiconductors Product Specification Rev 3.1 October 2004 Flip Chip Package Specification MF1 FCP2 S50

FCPF22N60NT

Abstract: FCP22N60N
Contextual Info: SupreMOSTM FCP22N60N / FCPF22N60NT tm N-Channel MOSFET 600V, 22A, 0.165Ω Features Description • RDS on = 0.140Ω ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling

mosfet 10a 600v

Abstract: mosfet 600V 20A FCP20N60 FCPF20N60
Contextual Info: TM FCP20N60 / FCPF20N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

Contextual Info: FCP260N60E / FCPF260N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 15 A, 260 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing

Contextual Info: Package outline FCP2: metal flip chip package; 2 leads; 35 mm wide tape SOT732-1 underfill tape A backside tape detail X X reject hole by device testing direction mark underfill tape D 5 10 15 20 mm scale DIMENSIONS mm are the original dimensions UNIT A

MF0 IC U1X

Abstract: philips 22c Specification FCP2 Flip Chip Package SOT732CA2 12NC ordering code philips MF0ICU10
Contextual Info: INTEGRATED CIRCUITS ADDENDUM MF0 FCP2 U1 Flip Chip Package Specification Product Specification Revision 3.0 PUBLIC Philips Semiconductors October 2004 Philips Semiconductors Product Specification Rev 3.0 October 2004 Flip Chip Package Specification MF0 FCP2 U1

Contextual Info: PDF: 2002 Mar 19 Philips Semiconductors Package outline FCP2: metal flip chip package; 2 leads; 35 mm wide tape SOT732-1 X D 10 20 mm A scale detail X DIMENSIONS mm are the original dimensions UNIT A max. D mm 0.3 35.2 34.8 For unspecified dimensions see FCP2-drawing given in the subpackage code.

fcp25n60

Abstract: FCP25N60N
Contextual Info: FCP25N60N_F102 N-Channel SupreMOS MOSFET 600 V, 25 A, 125 mΩ Features Description • RDS on = 107 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology

Contextual Info: FCP260N60E / FCPF260N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 15 A, 260 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing

FCP20N60

Contextual Info: SuperFET TM FCP20N60 / FCPF20N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

underfill

Abstract: FCP2 SOT732-1 sot732
Contextual Info: Package outline Philips Semiconductors FCP2: metal flip chip package; 2 leads; 35 mm wide tape SOT732-1 underfill tape A backside tape detail X X reject hole by device testing direction mark underfill tape D 5 10 15 20 mm scale DIMENSIONS mm are the original dimensions

20N60T

Abstract: mosfet 20n60 sd 20n60 FCP20N60 FCPF20N60 to220f 20n60 to220
Contextual Info: SuperFET TM FCP20N60 / FCPF20N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

FCP20N60

Abstract: mosfet 600V 20A Mosfet 600V, 20A FCPF20N60
Contextual Info: SuperFET FCP20N60 / FCPF20N60 TM 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

Specification FCP2 Flip Chip Package

Abstract: MF0 IC U1X 12NC ordering code nxp sot732ca2
Contextual Info: MF0 FCP2 U1 Flip chip package Rev. 3.1 — 8 February 2007 Product data sheet 073631 PUBLIC 1. General description 1.1 Scope This document specifies the products FCP2U10 and FCP2U11: • The FCP2U10/DH is the integrated circuit MF0ICU10 in the package

FCP22N60N

Contextual Info: FCP22N60N / FCPF22N60NT N-Channel SupreMOS MOSFET 600 V, 22 A, 165 mΩ Features Description • BVDSS > 650V @ TJ = 150oC The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction SJ technology employing a deep trench filling process that differentiates it from

Contextual Info: Type FCP Surface Mount Film Capacitors Stable Stacked Metallized Film PPS Chips for Reflow Soldering The Type FCP’s combination of high capacitance density and excellent high frequency response makes it a great choice for wireless and instrumentation applications.

jcop31

Abstract: PCF7921 NXP PN533 JCOP PN533 MOB4 package JCOP21 JCOP41 P5CN072 pdm1.1
Contextual Info: Smart solutions for smart services ISO 14443 ISO 15693 NXP Contactless Reader Systems Reader ICs MF RC500 100 64 8-bit parallel MF RC530 100 64 8-bit parallel, SPI MF RC531 100 64 8-bit parallel, SPI SL RC400 100 64 8-bit parallel CL RC632 100 64 8-bit parallel, SPI