FCK 111 Search Results

Contextual Info: . IBM13M64734HCA 64M x 72 Two-Bank Registered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 64Mx72 Synchronous DRAM DIMM • Performance: DIMM CAS Latency fCK Clock Frequency fCK Clock Cycle tAC Clock Access • • •

0364404CT3C

Abstract: 0364164PT3C-10 0364804CT3C 0364164PT3C-360 03644B 0364804CT3C-260 0364804PT3C-10 0364804CT3C-360
Contextual Info: IBM0364404 IBM0364804 IBM0364164 IBM03644B4 Advanced 64Mb Synchronous DRAM - Die Revision C Features • Multiple Burst Read with Single Write Option • Automatic and Controlled Precharge Command • High Performance: fcK I Clock Frequency -80, C L= 3 | 125

Contextual Info: IBM0316409C IBM0316809C IBM0316169C 16Mbit Synchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option CAS latency = 3 -10 -11 -12 -13 Units • Automatic and Controlled Precharge Command fcK Clock Frequency 100 91 83 77

11-CQ2

Contextual Info: IBM13N4649JC IBM13N4739JC PRELIMINARY 4M X 64/72 2 Bank Unbuffered SDRAM Module Features • 168 Pin emerging JEDEC Standard, Unbuffered Byte Dual In-line Memory Module • 4Mx64/72 Synchronous DRAM DIMM • Performance: CAS Latency fcK Clock Frequency tcK

PC100-322-620

Abstract: PC-100-322-620 PC133-333-520 PC100-222-620 P-TSOPII-54 39S256400AT-8A SMD MARKING CODE t15
Contextual Info: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM Preliminary Datasheet • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125

Contextual Info: . IBM13M64734CCA 64M x 72 2-Bank Registered/Buffered SDRAM Module Preliminary Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 64Mx72 Synchronous DRAM DIMM • Performance: -260 Device Latency fCK Clock Frequency tAC Clock Access Time

Contextual Info: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM Preliminary Information • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125

0364804PT3B

Contextual Info: I =¥= = = = ’= IBM0364404 IBM0364804 IBM0364164 IBM03644B4 P relim inary -68 64Mb S ynchronous DRAM - Die R evision B Features • Programmable Wrap: Sequential or Interleave • High Performance: • Multiple Burst Read with Single Write Option I fcK i Clock Frequency

P-TSOPII-54

Contextual Info: HYB 39S128400/800/160DT L 128-MBit Synchronous DRAM 128-MBit Synchronous DRAM Preliminary Target Specification 10.01 High Performance: • Multiple Burst Read with Single Write Operation -6 -7 -7.5 -8 Units fCK 166 143 133 125 MHz • Automatic and Controlled Precharge

204 pin so-DIMM DDR3 connector

Abstract: SO-DIMM DDR3 ECC NT2GC64B8HA1NS-BE NT1GC64BH8A1PS-BE ddr3 2gb pc3-10600 sodimm 204 connector PCB footprint
Contextual Info: NT1GC64BH8A1PS / NT2GC64B8HA1NS 1GB: 128M x 64 / 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333 64Mx16 1GB / 128Mx8 (2GB) SDRAM A-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency PC3-8500

DDR3 soDIMM pinout 204 pins

Abstract: nanya ddr3 DDR3 soDIMM pinout 204 pins ECC sodimm ddr3 connector PCB footprint 204 pin so-DIMM DDR3 connector PC3-8500 SO-DIMM DDR3 ECC DDR3 SO-DIMM pinout DDR3 DIMM pinout nanya 2gb DDR3 DIMM
Contextual Info: NT1GC64BH8A0PS-BE / NT2GC64B8HA0NS-BE 1GB: 128M x 64 / 2GB: 256M x 64 PC3-8500 Unbuffered DDR3 SO-DIMM Preliminary Edition Based on DDR3-1066 64Mx16 1GB / 128Mx8 (2GB) SDRAM A-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency

PC3-10600

Contextual Info: NT1GC72B89A0NF / NT2GC72B8PA0NF NT1GC72B89A1NF / NT2GC72B8PA1NF 1GB: 128M x 72 / 2GB: 256M x 72 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM with ECC Based on DDR3-1066/1333 128Mx8 SDRAM A-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency

NT5SV16M16BS-75B

Abstract: NT5SV32M8BS NT5SV16M16BS-6K NANYA NT5SV32M8BT-75B NT5SV16M16BT-75B
Contextual Info: NT5SV64M4BS / NT5SV64M4BT NT5SV32M8BS / NT5SV32M8BT NT5SV16M16BS / NT5SV16M16BT 256Mb Synchronous DRAM • • • • • • • • • • • • • • • • Features • High Performance: 6K 75B Units CL=3 CL=3 fCK Clock Frequency tCK Clock Cycle

Contextual Info: . IBM13M64734CCA 64M x 72 2-Bank Registered/Buffered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 64Mx72 Synchronous DRAM DIMM • Performance: -260 Device Latency fCK Clock Frequency tAC Clock Access Time 2 -360 -360 Units

4715-01

Contextual Info: IBM13N1649NC IBM13N1809NC Preliminary 1M X 64/80 1 Bank Unbuffered SDRAM Module Features • • 168 Pin emerging JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module 1Mx64/80 Synchronous DRAM DIMM • Performance: CAS Latency fcK tcK Uc Clock Frequency

NT1GC64BH8A1PS-BE

Contextual Info: NT1GC64BH8A1PS / NT2GC64B8HA1NS 1GB: 128M x 64 / 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333 64Mx16 1GB / 128Mx8 (2GB) SDRAM A-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency PC3-8500

Contextual Info: . IBMB6M32734CGA Preliminary 32Mx72 One Bank Registered DDR SDRAM Module Features • 184-Pin Registered 8-Byte Dual In-Line Memory Module • 32Mx72 Double Data Rate DDR SDRAM DIMM (32M X 4 SDRAMS) • Performance: PC1600 3.5 Units DIMM CAS Latency 3 fCK

IBMN364164

Abstract: IBMN364804 IBMN364164CT3C-68 IBMN364404 IBMN364164CT3C-360
Contextual Info: . IBMN364164 IBMN364804 IBMN364404 64Mb Synchronous DRAM - Die Revision C Features • Programmable Wrap: Sequential or Interleave • High Performance: -68 -75A, -260, -360, Units CL=3 CL=3 CL=2 CL=3 fCK Clock Frequency 150 133 100 100 MHz tCK Clock Cycle

Contextual Info: IBM13T4644MPE IBM13T4644MPD One Bank 4M x 64 SDRAM SO DIMM Features fcK j Clock Frequency 100 I MHz \ • Programmable Operation: - CAS Latency: 2, 3 - Burst Type: Sequential or Interleave - Burst Length: 1, 2, 4, 8, Full-Page FullPage supports Sequential burst only

Contextual Info: NT5SV64M4BS / NT5SV64M4BT NT5SV32M8BS / NT5SV32M8BT NT5SV16M16BS / NT5SV16M16BT 256Mb Synchronous DRAM • • • • • • • • • • • • • • • • Features • High Performance: 6K 75B Units CL=3 CL=3 fCK Clock Frequency tCK Clock Cycle

Contextual Info: HYB39S6440x/80x/16xT 64MBit Synchronous DRAM SIEM EN 64 MBit Synchronous DRAM Advanced Information • High Performance: Multiple Burst Operation -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns Automatic Command and Read with Single Controlled Write

Contextual Info: . IBM13Q13734BCA 128M x 72 Registered SDRAM Module Features • 200-Pin JEDEC Standard, Registered 8-Byte Dual In-line Memory Module • 128M x 72 Synchronous DRAM DIMM • Performance: CAS Latency = 2* fCK Clock Frequency tCK2 Clock Cycle tAC2 Clock Access Time

204 pin so-DIMM DDR3 connector

Abstract: NT1GC64BH ddr3-1333 2gb pc3-10600
Contextual Info: NT1GC64BH8A1PS / NT2GC64B8HA1NS 1GB: 128M x 64 / 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333 64Mx16 1GB / 128Mx8 (2GB) SDRAM A-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency PC3-8500

Contextual Info: NT5SV64M4BS / NT5SV64M4BT NT5SV32M8BS / NT5SV32M8BT NT5SV16M16BS / NT5SV16M16BT 256Mb Synchronous DRAM • • • • • • • • • • • • • • • • Features • High Performance: 6K 75B Units CL=3 CL=3 fCK Clock Frequency tCK Clock Cycle