FBGA 63 SOLDERING Search Results

transistor smd G46

Abstract: fluke 52 k/j Thermocouple 7512 pin diodes in micro semi data sheet smd transistor marking ey SMD MARKING CODE h5 MCP Technology Trend BGA-64 pad AMD reflow soldering profile BGA SMD MARKING CODE l6 BGA Solder Ball 0.6mm
Contextual Info: FBGA User’s Guide Version 4.2 -XO\  7KH IROORZLQJ GRFXPHQW UHIHUV WR 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG

29LV160TE

Abstract: 29lv800ta Micron 512MB NOR FLASH 29F800TA 29F033C 29f400tc TSOP 48 Package 29f160te Micron 32MB NOR FLASH 29f002tc
Contextual Info: T H E Home Products P O S S I B I L I T I E S A R E I N F I N I T E Contacts Contents Introduction to Flash Memory MEMORY SOLUTIONS NOR-Flash MirrorFlashTM FCRAMTM – Fast Cycle Ram MCP – Multi-Chip Packages Packaging Technology NOR-FLASH, MIRRORFLASHTM,

Contextual Info: HY57V283220T-I/ HY5V22F-I 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T-I / HY5V22F-I is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T-I / HY5V22F-I is organized as

HY5V52CF

Contextual Info: HY5V52CF 4 Banks x 2M x 32Bit Synchronous DRAM Preliminary DESCRIPTION The Hynix HY5V52CF is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V52CF is organized as 4banks of 2,097,152x32.

Contextual Info: HY5V52CFP 4 Banks x 2M x 32Bit Synchronous DRAM Document Title 4Bank x 2M x32Bit Synchronous DRAM Revision History Revision No. History Draft Date Remark Preliminary 0.1 Initial Draft May. 2003 0.2 1 Deleted Preliminary 2) Defined Input/Output Cap. Spec.

HY5V52CFP

Abstract: HY5V52CFPH
Contextual Info: Preliminary HY5V52CFP 4 Banks x 2M x 32Bit Synchronous DRAM Revision History 0.1 : New generation This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for use of circuits described. No patent licenses are implied.

LQFP 128 pin Socket

Abstract: IE-703107-MC-EM1 IE-V850E-MC IE-V850E-MC-A D70F3107
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

4 Banks x 1m x 32Bit Synchronous DRAM

Contextual Info: HY57V283220 L T(P)/ HY5V22(L)F(P) 4 Banks x 1M x 32Bit Synchronous DRAM Revision History Revision No. History 0.1 Defined Preliminary Specification 0.2 1) 2) 3) 4) 5) 6) 0.3 Defined IDD Spec. 0.4 Delited Preliminary. 0.5 Changed IDD Spec. 0.6 133MHz Speed Added

HY57V283220

Contextual Info: HY57V283220 L T(P)/ HY5V22(L)F(P) 4 Banks x 1M x 32Bit Synchronous DRAM Revision History Revision No. History 0.1 Defined Preliminary Specification 0.2 1) 2) 3) 4) 5) 6) 0.3 Defined IDD Spec. 0.4 Delited Preliminary. 0.5 Changed IDD Spec. 0.6 133MHz Speed Added

MT47H512M8

Contextual Info: 4Gb: x4, x8 TwinDie DDR2 SDRAM Functionality TwinDie DDR2 SDRAM MT47H1G4 – 64 Meg x 4 x 8 Banks x 2 Ranks MT47H512M8 – 32 Meg x 8 x 8 Banks x 2 Ranks For the latest component data sheets, refer to Micron’s Web site: www.micron.com Functionality Options

HY5V66EF6P

Abstract: HY5V66EF6
Contextual Info: 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. 0.01 History Initial Draft Draft Date Remark Dec. 2004 Preliminary June. 2005 Preliminary 1. Editorial chage 0.80Typ -> 0.45 +/-0.05 page12, Ball Dimension

data sheet for all smd components

Abstract: DO 213 AA smd SMD Transistor A12 data sheet SMD Transistor g15
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD98421 HIGH-SPEED ADDRESS SEARCH ENGINE DESCRIPTION The µPD98421 is a CAM Content Addressable Memory with a capacity of 64 bits x 8192 entries. Equipped with three types of search modes, this memory can search data at high speeds. One of these search modes, Longest

MT47H512M8

Contextual Info: 4Gb: x4, x8 TwinDie DDR2 SDRAM Features TwinDie DDR2 SDRAM MT47H1G4 – 64 Meg x 4 x 8 Banks x 2 Ranks MT47H512M8 – 32 Meg x 8 x 8 Banks x 2 Ranks Features Options • Configuration – 64 Meg x 4 x 8 banks x 2 ranks – 32 Meg x 8 x 8 banks x 2 ranks

HY5V62DF

Contextual Info: 64Mb Synchronous DRAM based on 512K x 4Bank x32 I/O Document Title 4Bank x 512K x 32bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 1 Inicial Version Release Jan. 2005 Preliminary 0.2 1) Corrected OREDERING INFORMATION Jan. 2005

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

6 pin 2D 1002 ring COUNTER

Abstract: nec 10f
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4481162, 4481182, 4481322, 4481362 8M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The µPD4481162 is a 524,288-word by 16-bit, the µPD4481182 is a 524,288-word by 18-bit, the µPD4481322 is a 262,144-word by 32-bit and the µPD4481362 is a 262,144-word by 36-bit ZEROSB static RAM fabricated with

DO 213 AA smd

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

marking code micron label

Contextual Info: ADVANCE‡ 64Mb MULTIBANK ASYNC/PAGE FLASH 16Mb ASYNC CellularRAM MEMORY FLASH AND CellularRAM COMBO MEMORY MT28C64416W18AFY Low Voltage, Wireless Temperature Features Figure 1: 68-Ball FBGA Stacked die Combo package • Includes one 64Mb Flash device • Includes one 16Mb CellularRAM device

nec 10f

Abstract: PD4481161
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4481161, 4481181, 4481321, 4481361 8M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD4481161 is a 524,288-word by 16-bit, the µPD4481181 is a 524,288-word by 18-bit, the µPD4481321 is a 262,144-word by 32-bit and the µPD4481361 is a 262,144-word by 36-bit ZEROSB static RAM fabricated with

HY57V283220

Abstract: HY57V283220T HY5V22FP
Contextual Info: HY57V283220T/ HY5V22FP 4 Banks x 1M x 32Bit Synchronous DRAM Revision History 0.1 : New generation This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for use of circuits described. No patent licenses are implied.

09005aef82f1e6e2

Contextual Info: 512Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H128M4 – 32 Meg x 4 x 4 banks MT47H64M8 – 16 Meg x 8 x 4 banks MT47H32M16 – 8 Meg x 16 x 4 banks Options1 Features • • • • • • • • • • • • • • • • • • • Configuration

Contextual Info: 512Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H128M4 – 32 Meg x 4 x 4 banks MT47H64M8 – 16 Meg x 8 x 4 banks MT47H32M16 – 8 Meg x 16 x 4 banks Options1 Features • • • • • • • • • • • • • • • • • • • Configuration

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid