FBE063 Search Results

29LV641

Abstract: 29LV640D
Contextual Info: A D V A N C E IN F O R M A T IO N AMDil Am29LV640DU/Am29LV641 DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation Compatibility with JEDEC standards

29lv641

Contextual Info: AMD£I ADVANCE INFORMATION Am29LV640DU/Am29LV641 DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 2.7 to 3.6 volt read, erase, and program operations

Contextual Info: Am29DL640D 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank.

S29JL064H

Abstract: S29PL064J 29F400 flash
Contextual Info: Am29DL640H Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new and current designs, S29JL064H for TSOP packages and S29PL064J (for FBGA packages) supersede AM29DL320H as the factory-recommended migration path. Please refer to each respective datasheets for specifications and ordering information. Availability of this document is retained for reference and historical

asme SA388

Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
Contextual Info: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ

AM29DL640G

Abstract: S29JL064H S29PL064J
Contextual Info: Am29DL640G Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new and current designs, S29JL064H for TSOP packages and S29PL064J (for FBGA packages) supersede AM29DL640G as the factory-recommended migration path. Please refer to each respective datasheets for specifications and ordering information. Availability of this document is retained for reference and historical

LV065MU

Abstract: 101R 120R
Contextual Info: Am29LV640MU Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG

Contextual Info: Am29DL640H Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

Contextual Info: Am29LV640D/Am29LV641D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

eeprom parallel st

Contextual Info: Am29DL640H Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

Contextual Info: Am29LV640D/Am29LV641D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

Contextual Info: Am29LV640MU Data Sheet For new designs, S29GL064M supersedes Am29LV640MU and is the factory-recommended migration path for this device. Please refer to the S29GLxxxM Family Datasheet for specifications and ordering information. July 2003 The following document specifies Spansion memory products that are now offered by both Advanced

Spansion S29JL064

Contextual Info: S29JL064H 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory Data Sheet S29JL064H Cover Sheet For new designs involving Fine-pitch Ball Grid Array (FBGA) packages, S29PL064J supersedes S29JL064H and is the factory

101R

Abstract: 120R 121R AM29LV065DU101R AM29LV065DU120R AM29LV065DU121R AM29LV065DU90R ei 280000
Contextual Info: Am29LV065D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

Contextual Info: Am29LV065D 64 Megabit 8 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control DISTINCTIVE CHARACTERISTICS • Single power supply operation — 3.0 to 3.6 volt read, erase, and program operations ■ VersatileIOTM control — Device generates output voltages and tolerates input

S29JL064H

Abstract: S29PL064J
Contextual Info: Am29DL640D Data Sheet This product has been retired and is not available for designs. For new and current designs involving TSOP packages, S29JL064H supersedes Am29DL640D and is the factoryrecommended migration path. Please refer to the S29JL064H datasheet for specifications and ordering information.

amd part marking

Abstract: S29JL064H S29PL064J
Contextual Info: Am29DL640D Data Sheet For new designs involving TSOP packages, S29JL064H supersedes Am29DL640D and is the factory-recommended migration path. Please refer to the S29JL064H datasheet for specifications and ordering information. For new designs involving Fine-pitch BGA FBGA packages, S29PL064J supersedes Am29DL640D and is the

LV065MU

Contextual Info: ADVANCE INFORMATION Am29LV065MU 64 Megabit 8 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations

LV065MU

Contextual Info: ADVANCE INFORMATION Am29LV640MU 64 Megabit 4 M x 16-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 V for read, erase, and program operations

l640du90r

Abstract: L640DU90RI L640DU90
Contextual Info: PRELIMINARY Am29LV640D/Am29LV641D 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation — 3.0 to 3.6 volt read, erase, and program operations ■ VersatileI/O control

Contextual Info: Am29DL640D 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank.

Contextual Info: Am29LV640D/Am29LV641D 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation — 3.0 to 3.6 volt read, erase, and program operations ■ VersatileI/O control

A15F6

Abstract: AM29LV641DL90
Contextual Info: ADVANCE INFORMATION Am29LV640DU/Am29LV641DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation — 2.7 to 3.6 volt read, erase, and program operations

Contextual Info: ADVANCE INFORMATION Am29LV065MU 64 Megabit 8 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations