AM29DL640G Search Results

AM29DL640G

Abstract: S29JL064H S29PL064J
Contextual Info: Am29DL640G Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new and current designs, S29JL064H for TSOP packages and S29PL064J (for FBGA packages) supersede AM29DL640G as the factory-recommended migration path. Please refer to each respective datasheets for specifications and ordering information. Availability of this document is retained for reference and historical

Contextual Info: PRELIMINARY Am50DL128CG Stacked Multi-Chip Package MCP Flash Memory and SRAM Two Am29DL640G 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and 64 Mbit (4 M x 16-Bit) Pseudo Static RAM with Page Mode DISTINCTIVE CHARACTERISTICS

Contextual Info: PRELIMINARY Am50DL128CG Stacked Multi-Chip Package MCP Flash Memory and SRAM Two Am29DL640G 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and 64 Mbit (4 M x 16-Bit) Pseudo Static RAM with Page Mode DISTINCTIVE CHARACTERISTICS

210000h

Contextual Info: PRELIMINARY Am50DL128CG Stacked Multi-Chip Package MCP Flash Memory and SRAM Two Am29DL640G 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and 64 Mbit (4 M x 16-Bit) Pseudo Static RAM with Page Mode DISTINCTIVE CHARACTERISTICS

PAL 0007 E amplificador

Abstract: FLB073-73-Ball
Contextual Info: PRELIMINARY Am49DL640BG Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL640G 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (512 K x 16-Bit) Pseudo Static RAM with Page Mode DISTINCTIVE CHARACTERISTICS

FNA093

Abstract: 29f016 MCP AC
Contextual Info: PRELIMINARY Am55DL128C8G Stacked Multi-Chip Package MCP Flash Memory and SRAM Two Am29DL640G 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memories and 64 Mbit (4 M x 16-Bit) Fast Cycle RAM and 8 Mbit (512K x 16-Bit) Static RAM

Contextual Info: PRELIMINARY Am50DL128BG Stacked Multi-Chip Package MCP Flash Memory and SRAM Two Am29DL640G 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and 32 Mbit (2 M x 16-Bit) Pseudo Static RAM with Page Mode DISTINCTIVE CHARACTERISTICS

Contextual Info: PRELIMINARY Am42DL6402G Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL640G 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features

AMD K7 data sheet

Abstract: transistor marking A21 PAL 0007 E amplificador
Contextual Info: ADVANCE INFORMATION Am29DL640G 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while

Contextual Info: PRELIMINARY Am29DL640G 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while

D640G90P

Abstract: D640G90 32Kword
Contextual Info: Am29DL640G 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank.

Contextual Info: PRELIMINARY Am29DL642G 128 Megabit 8 M x 16-Bit CMOS 3.0 Volt-only Simultaneous Read/Write Flash Memory DISTINCTIVE CHARACTERISTICS • Two 64 Megabit (Am29DL640G) in a single 63-ball 12 x 11 mm Fine-pitch BGA package (features are described herein for each internal Am29DL640G)

Contextual Info: Am29DL640G Data Sheet For new designs involving TSOP packages, S29JL064H supersedes Am29DL640G and is the factory-recommended migration path. Please refer to the S29JL064H Datasheet for specifications and ordering information. For new designs involving Fine-pitch BGA FBGA packages, S29PL064J supersedes Am29DL640G and is the

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Contextual Info: PRELIMINARY Am42DL6404G Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL640G 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features

Contextual Info: PRELIMINARY Am29DL642G 128 Megabit 8 M x 16-Bit CMOS 3.0 Volt-only Simultaneous Read/Write Flash Memory DISTINCTIVE CHARACTERISTICS • Two 64 Megabit (Am29DL640G) in a single 63-ball 12 x 11 mm Fine-pitch BGA package (features are described herein for each internal Am29DL640G)

Contextual Info: Am29DL640G 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank.

00011X

Contextual Info: PRELIMINARY Am42DL6402G Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL640G 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features

Contextual Info: Am29DL640G 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank.

D640G90

Contextual Info: Am29DL640G 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank.

Contextual Info: PRELIMINARY Am50DL128BG Stacked Multi-Chip Package MCP Flash Memory and SRAM Two Am29DL640G 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and 32 Mbit (2 M x 16-Bit) Pseudo Static RAM with Page Mode DISTINCTIVE CHARACTERISTICS

CompactCellTM Static RAM

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

M420000000

Abstract: FSB073 3FE00
Contextual Info: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector

FTA073

Contextual Info: Am50DL128BH Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and