FAIRCHILD OBSOLETE Search Results

10d-9 ntc

Abstract: transistor c113 471D10 8S0765RC C114 transistor DZ15V 25V Electrolytic capacitor eer3540 EER 3540 SWITCHING TRANSISTOR C114
Contextual Info: FS8S0765RCB Fairchild Power Switch FPS Features Description „ Burst Mode Operation to Reduce the Power FS8S0765RCB is a Fairchild Power Switch (FPS) that is specially designed for off-line SMPS of CRT monitors with minimal external components. This device is a

an5043

Abstract: IQX320 I-CUBE
Contextual Info: Fairchild Semiconductor Application Note July 2002 Revised July 2002 Migrating IQX320 Designs to MSX340 Introduction Feature Comparison The Fairchild Semiconductor MSX family of SRAM-based bit-oriented switching devices are next generation products offering feature enhancements from I-Cube’s recently

H11A817B

Abstract: 7805 5V 1A positive voltage regulator KA78L05A 7805 resistor OF 7805 1N4937 7805 power supply regulator 5v Power Supply Design using 7805
Contextual Info: May, 2003 Application Note 9027 TIP-Smart Power Module Test Board II SPM TEST BOARD for use in Isolated Inverter GND Interface using Optocouplers with Two Isolated Power Supplies 2003 Fairchild Semiconductor Corporation 1 Rev. A, May 2003 ©2003 Fairchild Semiconductor Corporation

ceramic capacitor 100nF 104

Abstract: capacitor 100nF 104 shunt resistor schematic diagram washing machines 104 capacitor 100nF capacitor 100nf ceramic capacitor 104 capacitor ceramic capacitor 1uf 600v capacitor 104 ceramic 100uf 16v electrolytic capacitor
Contextual Info: May, 2003 Application Note 9031 DIP-Smart Power Module Test Board III SPM TEST BOARD for use in Direct Interface with CPU without Shunt Resistor 2003 Fairchild Semiconductor Corporation 1 Rev. A, May 2003 C P U ©2003 Fairchild Semiconductor Corporation

carbon resistor

Abstract: carbon film resistor 1K 102 resistor C43102 TLC2274AIN schematic diagram washing machines 5W carbon resistor capacitor 102 50MOHM opamp carbon film resistor 39k datasheet
Contextual Info: May, 2003 Application Note 9029 DIP-Smart Power Module Test Board I SPM TEST BOARD for use in Direct Interface with CPU using 3-Shunt Resistor 2003 Fairchild Semiconductor Corporation 1 Rev. A, May 2003 ©2003 Fairchild Semiconductor Corporation C P

100nf 100 capacitor

Abstract: 1N4937 carbon film resistor
Contextual Info: May, 2003 Application Note 9026 TIP-Smart Power Module Test Board I SPM TEST BOARD for use in Direct Interface with CPU 2003 Fairchild Semiconductor Corporation 1 Rev. A, May 2003 ©2003 Fairchild Semiconductor Corporation 2 C23 102 C22 105 C12 471 C11

FQP60N03L

Abstract: 533B 600B AB-11 MBRD835L RC5058 c 9647
Contextual Info: Application Note 9014 July, 2000 Fairchild QFET for Synchronous Rectification DC to DC Converters by K.S. Oh 1. Introduction Fairchild is currently developing and marketing a new QFET series that has improved RDS on , gate charge, and switching speed characteristics. The superior features of these QFETs are

1E14

Abstract: 2E12 FSPYC264D1 FSPYC264F FSPYC264R FSPYC264R3
Contextual Info: FSPYC264R, FSPYC264F Data Sheet June 2001 2001 Fairchild Semiconductor Corporation Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle PY 64R PY 64F bjec diat den GR ista Cha l wer SF tho yw s diat den GR ista Cha l wer SF , rchi Fairchild Star*Power Rad Hard

3000 watt power amplifier circuit diagram

Abstract: 15 watt power supply circuit diagram power amplifier mmic
Contextual Info: RMPA29000 27-30 GHz 1 Watt Power Amplifier MMIC Description Features The Fairchild Semiconductor RMPA29000 is a high efficiency power amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMPA29000 is a 3stage GaAs MMIC amplifier utilizing Fairchild Semiconductor's advanced 0.15µm gate length Power PHEMT

J-STD-005

Abstract: IPC-SM-782 MO-220
Contextual Info: August 2001 Application Note 7525 PCB Land Pattern Design and Surface Mount Guidelines for MicroFET Packages Scott Pearson Fairchild Semiconductor , Jim Benson (Intersil Corporation) Introduction Fairchild’s MicroFET™ package is a relatively new packaging concept that is currently experiencing rapid acceptance. It offers a variety of benefits including reduced lead inductance, a small sized "near chip scale" footprint,

15 watt power supply circuit diagram

Contextual Info: RMPA39200 37-40 GHz 1.6 Watt Power Amplifier MMIC PRODUCT INFORMATION Description Features The Fairchild Semiconductor RMPA39200 is a high efficiency power amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMPA39200 is a 3stage GaAs MMIC amplifier utilizing Fairchild Semiconductor's advanced 0.15µm gate length Power PHEMT

Contextual Info: RMPA39000 37-40 GHz GaAs MMIC Power Amplifier PRODUCT INFORMATION Description Features The Fairchild Semiconductor RMPA39000 is a high efficiency power amplifier designed for use in point to point radio, point to multi point communications, LMDS and other millimeter-wave applications. The RMPA39000 is a 3stage GaAs MMIC amplifier chip utilizing Fairchild Semiconductor's advanced 0.15 µm gate length Power PHEMT

all mosfet equivalent book

Abstract: P-Channel Depletion Mosfets free transistor equivalent book free all transistor equivalent book n mosfet depletion 600V P-Channel Depletion Mode Field Effect Transistor fairchild power bjt datasheet MOSFET 800V 10A vmosfet n Power mosfet depletion
Contextual Info: November 2,1999 AN9010 MOSFET Basics April 1999 R & D 2 Group Fairchild Korea Semiconductor CONTENTS 1. History of Power MOSFETs. 2 2. FETs . 2

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FSYC163D FSYC163D1 FSYC163D3 FSYC163R FSYC163R1 FSYC163R3
Contextual Info: FSYC163D, FSYC163R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

6680a

Abstract: F011 F63TNR F852 FDS6680A L86Z SOIC-16
Contextual Info: October 2001 FDS6680A Single N-Channel, Logic Level, PowerTrench MOSFET GeneralDescription Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize

2E12

Abstract: 3E12 FSYE33A0D1 FSYE33A0R3 FSYE33A0R4 Rad Hard in Fairchild for MOSFET
Contextual Info: FSYE33A0D, FSYE33A0R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

1E14

Abstract: 2E12 FSYC264D FSYC264D1 FSYC264D3 FSYC264R FSYC264R1 FSYC264R3 Rad Hard in Fairchild for MOSFET
Contextual Info: FSYC264D, FSYC264R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

2E12

Abstract: FSYA9150D FSYA9150D1 FSYA9150D3 FSYA9150R FSYA9150R1 Rad Hard in Fairchild for MOSFET
Contextual Info: FSYA9150D, FSYA9150R Data Sheet Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

6680a

Abstract: FDS6680A SOIC-16
Contextual Info: October 2001 FDS6680A Single N-Channel, Logic Level, PowerTrench MOSFET GeneralDescription Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize

Si4822DY

Abstract: SOIC-16
Contextual Info: January 2001 Si4822DY Single N-Channel, Logic Level, PowerTrench MOSFET GeneralDescription Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize

2005Z

Abstract: IRF840B IRF series 2005 Z IRFS840B
Contextual Info: IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

2E12

Abstract: 3E12 FSYA450D FSYA450D1 FSYA450D3 FSYA450R FSYA450R1 Rad Hard in Fairchild for MOSFET
Contextual Info: FSYA450D, FSYA450R p Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

SSM1N45B

Contextual Info: SSM1N45B SSM1N45B 450V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

Si4874DY

Abstract: SOIC-16
Contextual Info: January 2001 Si4874DY Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize