FA4 MARKING Search Results

marking code FA12

Abstract: resister 10Kohm SM2964 SM2964C16 SM2964C25 SM2964C40 mov7
Contextual Info: SyncMOS Technologies Inc. SM2964 December 1998 8 - Bit Micro-controller with 64KB flash embedded Product List SM2964C16, 16 MHz 64KB internal flash MCU SM2964C25, 25 MHz 64KB internal flash MCU SM2964C40, 40 MHz 64KB internal flash MCU Features Working voltage:4.5V through 5.5V

Q62702-P1610

Abstract: Q62702-P1611 Q62702-P1614 Q62702-P1615 Q62702-P1638 Q62702-P1639
Contextual Info: SFH 325 SFH 325 FA fpl06867 NPN-Silizium-Fototransistor im SMT SIDELED-Gehäuse Silicon NPN Phototransistor in SMT SIDELED-Package 0.7 2.8 2.4 4.2 3.8 2.4 (R1) fplf6867 (1.4) 3.8 3.4 (2.9) Cathode marking Anode (0.3) Cathode 2.54 spacing (2.85) 1.1

2SC4179

Contextual Info: Transistors IC SMD Type NPN Silicon Epitaxia 2SC4179 Features High gain bandwidth product. Low output capacitance. Low noise figure. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V

Contextual Info: Opto Semiconductors 0.3 min 2.1 1.7 1.0 0.9 5.4 5.0 1.7 1.5 2.4 3.4 3.0 0.3 max 3.0 2.6 2.3 2.1 SFH 3211 SFH 3211 FA fpl06899 NPN-Silizium-Fototransistor im  SMT TOPLED RG-Gehäuse Silicon NPN Phototransistor in  SMT TOPLED RG-Package 0.0.1 Cathode/Collector marking

Contextual Info: SILICON TRANSISTOR 2SC4179 FM /A M RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters • High Gain Bandwidth Product: f-j- = 250 MHz TYP. • Low O utput Capacitance: CQb = 1.8 pF TYP. • Low Noise Figure: NF * 2.0 dB TYP.

BF900

Abstract: marking BP LED 103BF Fototransistor fototransistor led Q62702-P1057 Q62702-P1058 Q62702-P1192 Q62702-P85-S2 Q62702-P85-S3
Contextual Info: BP 103 B BP 103 BF .NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor NEW: Silicon NPN Phototransistor with Daylight Filter BP 103 B BP 103 BF Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

npn phototransistor sfh 309

Abstract: SFH 256 diode p1000 Fototransistor fototransistor led P1000 diode Q62702-P999 transistor 309 Q62702-P1000 Q62702-P174
Contextual Info: SFH 309 SFH 309 F NPN-Silizium-Fototransistor NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor Silicon NPN Phototransistor with Daylight Filter SFH 309 SFH 309 F Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified

Contextual Info: Opto Semiconductors NPN-Silizium-Fototransistor im SMT TOPLED RG-Gehäuse SFH 3211 SFH 3211 FA Silicon NPN Phototransistor in SMT TOPLED® RG-Package Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified. Wesentliche Merkmale

GEO06351

Abstract: Q62702-P3587 Q62702-P3588 Q62702-P957 Q62702-P958
Contextual Info: NPN-Silizium-Fototransistor; mit Tageslichtsperrfilter Silicon NPN Phototransistor; with Daylight Filter SFH 303 SFH 303 FA SFH 303 SFH 303 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm SFH 303 und bei 880 nm (SFH 303 FA)

sfh siemens

Abstract: npn phototransistor sfh 309 380nm SFH 309
Contextual Info: SIEMENS NPN-Silizium-Fototransistor NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor Silicon NPN Phototransistor with Daylight Filter SFH 309 SFH 309 F Area not flat 4,5t-” Collector Transistor Cathode (Diode) 'Chip position

Hall sensors marking code D

Abstract: 502a hall sensor TRANSISTOR SMD MARKING CODES SMD marking codes Hall sensors 4 Pin SMD Hall sensors SMD codes Hall sensors linear TRANSISTOR SMD MARKING CODE ag SMD Hall sensors code C transistor smd code marking KEY hall 502a
Contextual Info: General Literature S p eci a l To p i c s Hall Sensors: Ordering Codes, Packaging, Handling Edition Nov. 9, 2007 GL000002-003EN Hall Sensors: Ordering Codes, Packaging, Handling Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable.

f41 marking

Contextual Info: SIEMENS NPN-Silizium-Fototransistor NPN-Silizium-Fototransistor mit Tageslichtsperrfilter SFH 303 SFH 303 F Silicon NPN Phototransistor Silicon NPN Phototransistor with Daylight Filter Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherwise specified

Q62702-P1610

Abstract: Q62702-P1611 Q62702-P1614 Q62702-P1615 Q62702-P1638 Q62702-P1639 Q62702-P3603 Q62702-P3604 OHF01924
Contextual Info: NPN-Silizium-Fototransistor im SMT SIDELED -Gehäuse Silicon NPN Phototransistor in SMT SIDELED®-Package SFH 325 SFH 325 FA SFH 325 SFH 325 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1150 nm SFH 325 und bei

Contextual Info: NPN-Silizium-Fototransistor im SMT TOPLED -Gehäuse Silicon NPN Phototransistor in SMT TOPLED®-Package SFH 320 SFH 320 FA SFH 320 SFH 320 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1150 nm SFH 320 und bei 880 nm (SFH 320 FA)

Q62702-P0961

Abstract: Q62702-P0988 Q62702-P1606 Q62702-P1607 Q62702-P3601 Q62702-P3602 Q62702-P390 Q62702-P393
Contextual Info: NPN-Silizium-Fototransistor im SMT TOPLED-Gehäuse Silicon NPN Phototransistor in SMT TOPLED-Package SFH 320 SFH 320 FA SFH 320 SFH 320 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1150 nm SFH 320 und bei

502a hall sensor

Abstract: hall sensor smd 502A TO-92UA SMD Hall sensors code se micronas ordering codes SMD Hall sensors code C to92ua hal 502a
Contextual Info: Hall Sensors: Ordering Codes, Packaging, Handling Edition Sept. 12, 2001 6200-249-2E Hall Sensors: Ordering Codes, Packaging, Handling Contents Page Section Title 3 3 4 4 4 4 5 6 6 7 1. 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 Ordering Codes for Hall Sensors Overview

Phototransistor bp 101

Abstract: fototransistor led bf 252 SFH 207 Q62702-P1057 Q62702-P1058 Q62702-P1192 Q62702-P85-S2 Q62702-P85-S3 Q62702-P85-S4
Contextual Info: SIEMENS NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor NEW: Silicon NPN Phototransistor with Daylight Filter BP 103B BP 103 BF Area not flat Emitter _ 2 5 .2 _ J 2 4.2 Collector 8.2 Approx. weight 0 .2 g

Contextual Info: Barrier Strip Filtered Terminal Blocks The barrier strip filtered terminal block is designed to provide excellent EMI/RFI filtering of AC and DC power lines and control lines. This terminal block is available in various sizes, with terminals for soldering or spade lugs.

Contextual Info: SILICON TRANSISTOR 2SC1009A F M /A M RF AMPLIFIER. M IXER, OSCILLATOR. CONVERTER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in m illim eters • High Gain Bandwidth Product: f j » 250 MHz TYP. 2 .e ± 0 -2 • Low Output Capacitance: C0b = 1.0 pF TYP.

.3211

Abstract: FA4 MARKING
Contextual Info: NPN-Silizium-Fototransistor im SMT TOPLED RG-Gehäuse Silicon NPN Phototransistor in SMT TOPLED RG-Package SFH 3211 SFH 3211 FA SFH 3211 SFH 3211 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1150 nm SFH 3211 und bei

Contextual Info: NPN-Silizium-Fototransistor im SMT TOPLED RG-Gehäuse Silicon NPN Phototransistor in SMT TOPLED® RG-Package SFH 3211 SFH 3211 FA SFH 3211 SFH 3211 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1150 nm SFH 3211 und bei

DRAM11

Abstract: ADVA 186-ball NOR Flash
Contextual Info: S72WS-S based MCP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode MirrorBit Eclipse NOR Flash on Bus 1 Mobile SDRAM on Bus 2 Data Sheet Advance Information S72WS-S based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

SC74A

Abstract: 74a diode 2SA20 chdtc114e transistor circuit BD NPN transistors CHUMH11 marking FG9 CIRCUIT79
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Equivalent Collector Collector to Current Emitter Voltage IC VCEO V mA DC Current Gain HFE @ VCE / IC Min-Max V / mA Saturation Voltage Collector to Emitter VCE SAT @ IC / IB

Q62702-P3604

Abstract: Q62702-P1610 Q62702-P1611 Q62702-P1614 Q62702-P1615 Q62702-P1638 Q62702-P1639 Q62702-P3603
Contextual Info: NPN-Silizium-Fototransistor im SMT SIDELED -Gehäuse Silicon NPN Phototransistor in SMT SIDELED®-Package SFH 325 SFH 325 FA SFH 325 SFH 325 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1150 nm SFH 325 und bei