ADVA Search Results

Low Drop Out Regulators

Abstract: 7585C DIL 16
Contextual Info: o UCC2930-3\UCC3930-3 IIMTKORATKO C IR C U IT S ADVANCED INFORMATION UNITRODE Cellular Telephone Power Converter DESCRIPTION FEATURES BiCMOS Low Power RF/Cellular power management Negative 2.5 Volt @ 5 m A regulator for GaAs MESFET Separate Micro-power 3.3 V logic

toshiba p300

Abstract: kd qa
Contextual Info: INTEGRATED T O SH IB A 8 -B IT CIRCUIT TECHNICAL TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC74ACT299P/F/FW DATA SILICON MONOLITHIC PIPO SHIFT REGISTER WITH ASYNCHRONOUS CLEAR The TC74ACT299 is an advanced high speed CMOS 8-BIT PIPO SHIFT REGISTER fabricated with silicon gate and

TC74AC373

Contextual Info: INTEGRATED T O SH IB A CIRCUIT TECHNICAL TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC74AC37BP/F/FW/FS DATA SILICON MONOLITHIC OCTAL D -TYP E LATCH WITH 3 -STATE OUTPUT The TC74AC373 is an advanced high speed CMOS OCTAL LATCH with 3 - STATE OUTPUT fabricated with silicon

74ALS05

Abstract: diode sy 106 diode sy 180 10
Contextual Info: TOSHIBA TENTATIVE TC74VHC05F/FN/FT TO SH IBA C M O S DIGITAL INTEGRATED CIRCUIT SILICON M O N O LITH IC TC74VHC05F, TC74VHC05FN, TC74VHC05FT HEX INVERTER OPEN DRAIN _ The TC74VHC05 is an advanced high speed CMOS INVERTER fabricated with silicon gate C2MOS technology.

Contextual Info: TOSHIBA UTOPIA Multiplexer/ De-Multiplexer 1 9 9 T C 3 5 8 8 5 T B R e v i s i o n DAT A TOSHIBA AMERICA ELECTRONIC COMPONENTS, I NC 1. 1 BOOK 9 TO SH IB A Preliminary TC35885TB The contents of this technical data are su bject to change w itho ut advance notice due to

A9RV

Abstract: 5s a315 A327
Contextual Info: TOSHIBA TC514900AJLL-70/80 524,288 WORD X 9 BIT DYNAMIC RAM DESCRIPTION The TC514900AJLL is the new generation dynamic RAM organized 524,288 word by 9 bit. The TC514900AJLL utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

UFNF430

Abstract: diode ed 2437 UFNF432
Contextual Info: POWER MOSFET TRANSISTORS U F N F 4 3 0 U F N F 4 3 1 500 Volt, 1.5 Ohm N-Channel U F N F 4 3 2 U F N F 4 3 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rostom and a high transconductance.

K2545

Abstract: cx 2808 tlc2652 TLC2652A D3157
Contextual Info: TLC2652, TLC2652A Advanced LinCMOS1 PRECISION CHOPPER-STABILIZED OPERATIONAL AMPLIFIERS D3157, SEPTEMBER 1988 0008, JG, or P PACKAGE Extremely Low Offset Voltage . . 1 nV Max TOP VIEW Extremely Low Change in Offset Voltage with Temperature . . . 0.003nV/°CTyp

UC494

Contextual Info: SSSSSÄ UNITRODE UC494A UC495A UC494AC UC495AC Advanced Regulating Pulse Width Modulators FEATURES • Dual u n com m itted 40V, 2 0 0 m A output tran sistors » 1% a ccu rate 5V reference • Dual error am p lifie rs • W ide range, v a riab le dead tim e

260-pin

Contextual Info: TOSHIBA TC55V1864J/FT-10/12/15 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 18 BIT CMOS STATIC RAM Description TheTC55V1864J/FT is a 1,179,648 bit high speed CMOS static random access memory organized as 65,536 words by 18 bits and operated from a single 3.3V : upply. Toshiba’s advanced CMOS technology and circuit design enable high speed operation.

AC5947N

Abstract: HDSP-6508 AC5947NF 75498 AC5947 DIGITAL IC 7493 ic 7493 supply voltage power supply current 12 pin 4 digit 7 segment display SN7694N
Contextual Info: ADVANCED C IR C U IT S PRELIM INARY AC5947N 18-SEGMENT D IS P L A Y DRIVER 12/11/79 N O R N F D U AL-IN-LINE PACKAGE TO P VIEW On chip latches for the A S C II input data ’C Output enable for display blanking and duty cycle dimming u *[ »C •c ’[

ic 6283 circuit diagram

Abstract: amplifier ic 6283 amplifier circuit using 6283 d 6283 ic
Contextual Info: IN T E G R A T E D C IR C U I T S UC1853 UC2853 UC3853 U N IT R Q D E ADVANCED INFORMATION High Power Factor Preregulator Complete 8-pin Power Factor Solution Reduced External Components RMS Line Voltage Compensation Precision Multiplier/Squarer/Divider Internal 75kHz

Contextual Info: TOSHIBA TC74LVX4245FS Dual Supply Octal B u s Transceiver The TC74LVX4245 is a dual supply, advanced high speed C M O S O CTAL B U S T R A N SC E IV E R fabricated with silicon gate C M O S technology. Designed for use as an interface between a 5V bus and a

Contextual Info: TOSHIBA TC7WH74FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7WH74FU D-TYPE FLIP FLOP WITH PRESET AND CLEAR The TC7WH74FU is an advanced high speed CMOS D-FLIP FLOP fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent

TC514170BJ-80

Abstract: tc514170 TC514170BJ80
Contextual Info: TOSHIBA TC514170BJ-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514170BJ is the new generation dynam ic RAM organized 262,144 word by 16 bit. The TC514170BJ utilizes T oshiba’s CM OS silicon gate process technology as well as advanced circuit techniques

Contextual Info: TEXAS INSTR -C LI N/I NTFO *ìl 8961724 TEXAS INSTR LIN /IN TFC dË J 5 ^ 1 7 2 4 007 5115 2 91D ADVANCE INFORMATION 75912 SN7S609 DUAL FLUX-REGULATING ACTUATOR T -5 2 -1 3 -4 5 2.6-A Current Capability per Channel K V SINGLE-IN-LINE PACKAGE (TOP VIEW)

ufn440

Abstract: UFN441
Contextual Info: POWER MOSFET TRANSISTORS UFN440 UFN441 UFN442 UFN443 500 Volt, 0.85 Ohm N-Channel FEA TU RES D ESCRIPTIO N • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low R dscow and a high transconductance.

TC5117800bnt-60

Abstract: TC5117800B
Contextual Info: TOSHIBA TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM Description The TC5117800BNT is the fast page dynamic RAM organized 2,097,152 words by 8 bits. The TC5117800BNT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,

UFN432

Abstract: mosfet UFN432 UFN 432 UFN431 UFN433
Contextual Info: POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel UFN430 UFN431 UFN432 UFN433 FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance.

TC160G

Abstract: toshiba LGA Nand TC170C14 TC26SC TC170C1 TC170C29
Contextual Info: TOSHIBA TC170C CMOS Standard Cell 0.7\xm , 5.0V ASICs The 0.7nm, 5V TC170C allows higher area efficiency, system performance and device integration with lower power than previous generation 5V standard cell products Benefits • Advanced 0.7 micron CMOS process with fast 250ps gate

Contextual Info: TOSHIBA TC7SH04F/FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7SH04F, TC7SH04FU INVERTER The TC7SH04 is an advanced high speed CMOS INVERTER fabricated with silicon gate C2MOS technology. It achieves The high speed operation similar to equivalent

ac201

Abstract: ac199
Contextual Info: TC74ACT175P/F/FN QUAD D-TYPE FLIP FLOP WITH CLEAR The TC74ACT17S is an advanced high speed CMOS QUAD D -T Y P E F L IP -F L O P fabricated with silicon gate and double-layer m etal w iring CMOS technology. It achieves the high speed operation sim ilar to equivalent

TLCS-90

Contextual Info: TO SH IBA TMP90C846 CMOS 8-BIT MICROCONTROLLER TMP90C846F 1. OUTLINE AND CHARACTERISTICS The TMP90C846 is an advanced 8-bit microcontroller developed for application in the control of HDD/FDD high-speed mechanisms. The built-in functions include a high­ speed A/D converter minimum sampling rate: 400ns @ 10MHz with an external start

2N6797

Contextual Info: POWER MOSFET TRANSISTORS JTX JTXV 200 Volt, 0.4 Ohm N-Channel DESCRIPTION The U nitrode power M O SFET design u tilizes the m ost advanced technology available. This efficien t design ach ieves a very low Rosiom and a high transconductance. FEATURES • Fast Sw itching