F631 Search Results

f630

Abstract: F631 hamming code-error detection correction 74F630 74F631 N74F630D N74F630N N74F631D N74F631N
Contextual Info: FAST 74F630, F631 Error Detection Correction 16-Bit Parallel Error Detection and Correction 'F630 — 3-State ('F631 — Open-Collector) Preliminary Specification FAST Products FEA TURES • H ig h -im p e d a n c e NPN b a s e in p u t fo r re d u c e d lo a d in g (2 0 jiA in

Contextual Info: FAST 74F630, F631 Signetics Error Detection Correction 16-Bit Parallel Error Detection and Correction 'F630 — 3-State ('F631 — Open-Collector) Preliminary Specification FAST Products FEATURES • High-impedance NPN base input for reduced loading (20/oA in

Contextual Info: n iT m b e r C -16V Ï9 -E D IM EN SIO N S IN m . r w — 0 0 NOT SCA LE PRIN T 250 SEV/& FASTDNTRBfofl + 43 MAX. - f = Z Z ZI Z Z Z Z L ORDER N.R f63173-1 „ -2 •• -3 —<4 . -5 „ -6 . -7 -8 " ~3 1-163/73 -0 y/~ y; / / //~ t \ r r w :. // '/r 5 ECTfONJB-B

f630

Abstract: 74F630 74F631 F631 N74F630N N74F631D N74F631N
Contextual Info: FAST 74F630, F631 Sìgnetics Error Detection Correction 16-Bit Parallel Error Detection and Correction F 630 — 3-State ('F631 — Open-Collector) Preliminary Specification FAST Products FEATURES • High-impedance NPN base input for reduced loading (20/jA In

8251a usart interface from z80

Abstract: UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4
Contextual Info: L4E75BS DÜHBÖGb 3ÔÔ B I N E C E CB-C7, 5-VOLT 0.8-M ICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. August 1993 Description Figure 1. Integrated HDD Solution with CBC7 Cell-Based ASIC with Embedded 78K3 MPU, Compiled SRAMs and A/D Converters CB-C7 cell-based product family is a 0.8-micron drawn

transistor f422

Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
Contextual Info: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for

BFU 450

Abstract: BV EI 481 1300 J33CA BV EI 305 2800 5SMCJ28A 1.5SMCJ100CA 5SMCJ33A BHN 43 CY10 1.5SMCJ30CA
Contextual Info: 1.5SMCJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR V O LTA G E -5 .0 -1 7 0 Volts Peak Pulse Power-1500 W atts FEATU RES • For surface m ounted applications in order to optim ize board space • Low profile package • Built-in strain relief • Glass passivated ju n ctio n

F483

Abstract: f422 b0w4 NEC VOLTAGE COMPARATOR IC LIST F-637
Contextual Info: SEC V CMOS-5R 1.2-MICRON CMOS GATE ARRAYS NEC Electronics Inc. PRELIMINARY January 1990 Description Figure 1. Package Photo N EC 's C M O S -5R fa m ily com bines preconfigured static RAM blocks w ith a standard gate array architecture. By integrating m em ory and gate array logic on a single IC, the

transistor f422

Abstract: transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK
Contextual Info: i O 1993 iir n r, . . NEC E le ctro n ics Inc. Prelim inary Description CMOS-8LCX 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS c ro s s c h e c k te s t s u p p o rt February 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family are ultra-high perform­

Contextual Info: This information is given as an indication. In the continual goal to improve our products, we reserve the right to make any modifications judged necessary irfcSii llJCl RADI ALL Microwave components 22GHz SMA OPTIONS : INDICATOR TECHNICAL DATA SHEET LATCHING

74F161 PC

Abstract: 74F163PC 74f500 74f558 74F164PC 74F548PC 74F138d 74F547PC transistor f630 74F253DC
Contextual Info: F a ir c h ild A d v a n c e d S c h o t t k y T L $ 3. HANDLING PRECAUTIONS FOR SEMICONDUCTOR COMPONENTS The follow ing handling precautions should be observed for oxide isolation, shallow junction processed parts, such as FAST or 100K ECL: 1. All Fairchild devices are shipped in conducting foam or anti­

Contextual Info: S E M IC O N D U C TO R PRELIMINARY tm FDS6690S N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level M O SFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state

bv0T

Abstract: 658X
Contextual Info: N E C ELECTRONICS INC b7E D • b4E75S5 QQ3T701 4bD HINECE CMOS-8L 3 -V O LT, 0.50-M IC R O N cm os g a te a r r a y s ä I M t L NEC Electronics Inc. P re lim in a r y Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high per­

D65806

Abstract: 9215K1
Contextual Info: tFEB i 7 1993 CMOS-8 5 VOLT, 0 .65-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary January 1993 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are ultra-high performance, sub-m icron gate arrays, targe te d fo r a pp lications

J18M

Abstract: itt 2222 marking code F302 L-423 d 65632 "Single-Port RAM" marking L442 em 288 NEC uPD 65658 RU4D
Contextual Info: <S *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CM OS-6V and CMOS-6X are ultra-high perform ­

Digital IC CMOS 16x1 mux

Abstract: PART NUMBERING NEC IC DECODER ic tba 810 f34 function generator 80c42 F981 IC NEC VOLTAGE COMPARATOR IC LIST 3volt inverter 765 floppy disk controller 16x1 mux
Contextual Info: b42?525 00437T3 TTT « N E C E |^ | 1^1 t w C B-C7, 3-VO LT 0.8-M IC R O N c e l l - b a s e d c m o s a s ic NEC Electronics Inc. C Preliminary Description The CB-C7,3-volt cell-based product family is intended for low power portables and battery-operated products. A

Contextual Info: 123456789ABCA2DE7FC44A97  !"#"$7 81#%!4 •1BC7! 4A9-.97/049.23/62C74 )+6978,4$76C*4#A9-.97/041.239A414 ·1D73.24A9-.97/04AC9443!13341=844 $#

Contextual Info: INTEGRATED CIRCUITS l y i E I TI im m Xilinx has acquired the entire Philips CoolRurtner Low Power CPLD Product Family, For more technical or sales information^ please see; 8 £«& ^S l 8 ft « »0» X ft »« www.xillnx.com XCR3960 960 macrocell SRAM CPLD

transistor f422

Abstract: transistor f423 BKDF f422 transistor B00J f422 F423 fet 13187 RJ4B ru4f
Contextual Info: N E C ELECTRONICS INC b7E D NEC NEC Electronics Inc. I b *427525 Q D 3 ci 7 n bTD « N E C E CMOS-8LCX 3-VOLT, O.5O-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT Prelim inary Description O c to b e r 1 9 9 3 Figure 1. Various CMOS-8LCX Packages N EC 's 3-volt C M O S -8L C X family consists of ultra-high

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

ru4f

Abstract: F422 F423 rj8b "Single-Port RAM" TT 2246 RU89 BE09 L737 f425
Contextual Info: *,yt * *W¿ NEC NEC Electronics Inc. C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform ­

DB95

Contextual Info: 1 1111111111111 111111 1 1111111111111 1 1111111111111 1 1111111111111 1 1 A123456789AABCDCEFCAFBAAAAA A AAAAAAAA A AAAAAAAA A AAAAAAAA A AAAAAAAA A A CA5E 3CD1AEA89 F !"#$%A89A&' 5 *A'BA1EEA !"ACCDCB A(+63&,6A(&+A A

diode ru4d

Abstract: ru4f bvde RJ4B 364-pin ITT 2222 A rj8b diode ru4d compatible "RJ-49" FWB1
Contextual Info: C M O S -8 L 3 -V O L T , 0 .5 0 -M IC R O N C M O S G A TE A R R A YS NEC Electronics Inc. P r e lim in a r y Description February 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS- 8 L family consists of ultra-high per­ fo rm a n c e , s u b -m ic ro n g a te a rra y s , ta rg e te d fo r

bv0T

Abstract: F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d
Contextual Info: CMOS-8L 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high