F422
Abstract: F423 F421 F-423 ir f422 UFNF422
Contextual Info: UNITRODE CORP 9347963 TS UNITRODE CORP DE 1 ^ 3 4 7 ^ 3 92D 10875 UFNF420 UFNF421 UFNF422 UFNF423 POWER MOSFET TRANSISTORS 500 Volt, 3.0 Ohm FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability
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D01Gfl75
UFNF420
UFNF421
UFNF422
UFNF423
UFNF423
F422
F423
F421
F-423
ir f422
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tr f422
Abstract: F422 F423 UFNF422 ufnf420 F421
Contextual Info: POWER MOSFET TRANSISTORS [J ™? 500 Volt, 3.0 Ohm UFNF422 UFNF423 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rdsioih and a high transconductance. FEATURES • Fast Switching
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UFNF422
UFNF423
UFNF420
UFNF421
tr f422
F422
F423
F421
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MRF485
Abstract: MRF477 Motorola transistors MRF475 Motorola transistors MRF485 MRF466 MRF476 Motorola transistors MRF477 UHF-800 mrf464 MRF475
Contextual Info: "W . CASE 211-07 CASE 211-09 .380" Flange] CASE 145A-09 (.380' Stud CASE 145A-10 (.500'’ Stud) CASE 211-11 (.500'' Flange; BIPOLAR TRANSISTORS Motorola’s broad line of bipolar RF Power Transistors are de signed for operation in RF Power Amplifiers. These transistors
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Distorti1-11
MRF421
MRF475
O-22GAB
MRF412
IMRF410
MRF485
MRF401
45A-09
MRF426
MRF477
Motorola transistors MRF475
Motorola transistors MRF485
MRF466
MRF476
Motorola transistors MRF477
UHF-800
mrf464
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IRF423
Abstract: ir*420 SM 3117 circuit diagram IRF420 IRF421 IRF422
Contextual Info: Standard Power MOSFETs IRF420, IRF421, IRF422, IRF423 File N u m b e r 1571 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 2.0A and 2.5A, 450V-500V rDs on = 3.0 O and 4.0 fi Features:
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IRF420,
IRF421,
IRF422,
IRF423
50V-500V
IRF422
IRF423
IF422
ir*420
SM 3117 circuit diagram
IRF420
IRF421
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MRF485
Abstract: mrf477 MRF475 MRF476 Motorola transistors MRF476 Motorola transistors MRF475 Motorola transistors MRF455 MRF466 MRF455 MRF460
Contextual Info: "W . CASE 211-07 CASE 211-09 .380" Flange] CASE 145A-09 (.380' Stud CASE 145A-10 (.500'’ Stud) CASE 211-11 (.500'' Flange; BIPOLAR TRANSISTORS Motorola’s broad line of bipolar RF Power Transistors are de signed for operation in RF Power Amplifiers. These transistors
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MRF476
T0-220AB
MRF453
MRF455/A
MRF454
MRF475
MRF449
MRF450/A
MRF497
O-220AB
MRF485
mrf477
Motorola transistors MRF476
Motorola transistors MRF475
Motorola transistors MRF455
MRF466
MRF455
MRF460
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SOT 86 MARKING 03
Abstract: transistor bf 422 41 BF transistor BF420S transistor bf 422 NPN BH Rf transistor BF 422 92Z MARKING CODE SBF422 BF422S
Contextual Info: I TELEFUNKEN ELECTRONIC 1 ?E D m ß^GDTb DDG^MOB 1 BF 420 S • BF 422 S TIILKPtM iN ] electronic Crtaliv« Ttchootoo« r - Silicon NPN Epitaxial Planar RF Transistors 3 / - * 3 Applications: Video B-class power stages in TV-receivers .Features; • B F4 2 0 S complementary to BF 421 S
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BF420S
T0126
15A3DIN
SOT 86 MARKING 03
transistor bf 422
41 BF transistor
BF420S
transistor bf 422 NPN
BH Rf transistor
BF 422
92Z MARKING CODE
SBF422
BF422S
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MRF245
Abstract: PT8828 BFY70 J0303 CM-501 sd1238 2N6096 RF Transistor S10-12 2N4932 BLY94
Contextual Info: 960. 1215 MHz class C pulse for DME/IFF/TACAN transistors pour applications D M E /IFF/TAC A N puisées, classe C TYPE PACKAGE CONFIG. V cc V SD 1528 .280 4L STU D (A) S D 1528-1 .280 4LSL (A) S D 1528-8 .250 2LFL HERM SD 1530 .280 4L STU D (A) SD 1530-1
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CB-403)
CB-410)
CB-303)
CB-4111
CB-306)
CB-407)
1CB-404)
CB-408)
CB-409)
52N6082
MRF245
PT8828
BFY70
J0303
CM-501
sd1238
2N6096
RF Transistor S10-12
2N4932
BLY94
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mrf245
Abstract: SD1416 PT9788 PT8710 2N5642 BLY94 PT8811 BLX66 PT8740 2N4072
Contextual Info: 88. 108 MHz class C for FM tansmitters émetteurs/réémetteurs FM, classe C TYPE SD 1457 SD 1460 PACKAGE CONFIG. Vcc CE CE 28 28 . 500 4LFL . 500 4LFL Pout W (V) > THOMSON-CSF fo (MHz) Pin (W) Gp (dB) (% ) 108 108 7,5 20 > 10 9 75 75 75 160 r!c .380 4L FL
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SD2N6082
BM80-12
SD1416
MM1601
MRF631
SD1144
PT8549
SD1214
N5054
2N3553
mrf245
PT9788
PT8710
2N5642
BLY94
PT8811
BLX66
PT8740
2N4072
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2N918
Abstract: SD1076 PT8811 MRF245 RF Transistor S10-12 PT8828 PT8710 sd-1076 PT9780 transistor pt4544
Contextual Info: 130. 175 MHz class C for FM mobile applications p\ communications mobiles FM, classe C TYPE PACKAGE CONFIG. V cc V .280 4LSL (B) XO-72 SL TO-117 SL .280 4LSL (B) .280 4LSL (B) CE CE CE CE CE 7,5 7,5 7,5 7,5 7,5 2N 4427 SD 1484-10 SD 1127 2N 6080 SD 1574
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BAM20
22N6082
BM80-12
SD1416
MM1601
MRF631
SD1144
PT8549
SD1214
N5054
2N918
SD1076
PT8811
MRF245
RF Transistor S10-12
PT8828
PT8710
sd-1076
PT9780
transistor pt4544
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BFY70
Abstract: PT8828 CM45-12A THB598 PT8811 BLY22 sd1451 MRF245 PT8710 PT9780
Contextual Info: wideband VHF - UHF class C for E C M and radio links applications applications large bande VHF-UHF, classe C, contre mesure et faisceaux hertziens PACKAGE TYPE C O NFIG. Pout Frequency Pin range W (W) (M Hz) Vcc (V) 1H0MS0N-CSF GP min (dB) m in (% ) m ax
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2N6082
BM80-12
SD1416
MM1601
MRF631
SD1144
PT8549
SD1214
N5054
2N3553
BFY70
PT8828
CM45-12A
THB598
PT8811
BLY22
sd1451
MRF245
PT8710
PT9780
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upd6500
Abstract: F922 uPD65007 F981 IC tr f422 F661 CMOS GATE- NEC f422 f962 f791
Contextual Info: SEC CMOS-4L 1.5-M ICRON LOW-VOLTAGE CMOS GATE ARRAYS NEC Electronics Inc. February 1990 Description Figure 1. Sample CMOS-4L Packages NEC’s CMOS-4L family of 1.5-micron gate arrays are high-density, low-voltage application-specific integrated circuits ASICs that offer unique solutions for batterydriven circuits. Supply voltages ranging from 1.0 V to 5.5
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b556
Abstract: PD67000 2222 kn a PD67030 B558 pd67020 F314 AN b559 F304 F424
Contextual Info: N E C 6427S2S N E C ELECTRONICS INC TÖ Ô Ê | L.M275ES QQlTTñM fl J ~ D V - ^ /Z - ìS ' Bi-CMOS-4 ADVANCED PROCESS b ì-c m o s g a t e a r r a y s ELECTRONICS INC 98D 17984 NEC Electronics Inc. February 1988 Description Features The Bi-CM O S-4 gate arrays feature the high speed of
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6427S2S
M275ES
bM27525
I7993
T-45W/-/5
b556
PD67000
2222 kn a
PD67030
B558
pd67020
F314 AN
b559
F304
F424
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pin diagram of full adder using Multiplexer IC
Abstract: tr f422 UPD65000 fj01 F713 f422 F715 PD65080 F-661 F-642
Contextual Info: N E C ELECTRONICS INC 7 5 D E ] b4E75B5 ODDfiBlfi 3 SEC NEC Electronics Inc. T-42-11 09 % ¿tPD65000 CMOS-3 SERIES cm os g a te a r r a y s 2 -m ic ro n January 1985 Description The//PD65000 (CMOS-3) series of gate arrays are lowpower, high-speed devices featuring 2-micron silicon
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b4E75B5
T-42-11
uPD65000
NECEL-000246-0185
pin diagram of full adder using Multiplexer IC
tr f422
fj01
F713
f422
F715
PD65080
F-661
F-642
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F483
Abstract: f422 b0w4 NEC VOLTAGE COMPARATOR IC LIST F-637
Contextual Info: SEC V CMOS-5R 1.2-MICRON CMOS GATE ARRAYS NEC Electronics Inc. PRELIMINARY January 1990 Description Figure 1. Package Photo N EC 's C M O S -5R fa m ily com bines preconfigured static RAM blocks w ith a standard gate array architecture. By integrating m em ory and gate array logic on a single IC, the
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16k-bit
64k-bit
IP-8001
F483
f422
b0w4
NEC VOLTAGE COMPARATOR IC LIST
F-637
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D65842
Abstract: diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys
Contextual Info: SEC CMOS-8L 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary Description O cto b er 1992 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family are ultra-high perform ance, sub-micron gate arrays, targeted for applications
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jPD65800
D65842
diode ru4d
136-Pin
CMOS7
BV09
180 nm CMOS standard cell library Synopsys
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D65806
Contextual Info: W So 1393 C M O S -8 5 -V O L T , 0 .6 5 -M IC R O N CM OS GATE ARRAYS NEC NEC Electronics Inc. April 1993 Description Figure 1. Sample CMOS-8 Packages NEC’s 5-volt CMOS-8 family are ultra-high performance, s u b -m ic ro n gate a rra y s , ta rg e te d fo r a p p lic a tio n s
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65-micron
D65806
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D65806
Abstract: 9215K1
Contextual Info: tFEB i 7 1993 CMOS-8 5 VOLT, 0 .65-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary January 1993 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are ultra-high performance, sub-m icron gate arrays, targe te d fo r a pp lications
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65-MICRON
xPD65800
D65806
9215K1
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J18M
Abstract: itt 2222 marking code F302 L-423 d 65632 "Single-Port RAM" marking L442 em 288 NEC uPD 65658 RU4D
Contextual Info: <S *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CM OS-6V and CMOS-6X are ultra-high perform
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bv0T
Abstract: F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d
Contextual Info: CMOS-8L 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high
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50-MICRON
PD658xx
bv0T
F423
FV06
RJ4B
83YL-9164B
"Single-Port RAM"
B00J
transistor f423
bewf
diode ru4d
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bv0T
Abstract: 658X
Contextual Info: N E C ELECTRONICS INC b7E D • b4E75S5 QQ3T701 4bD HINECE CMOS-8L 3 -V O LT, 0.50-M IC R O N cm os g a te a r r a y s ä I M t L NEC Electronics Inc. P re lim in a r y Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high per
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b4E75S5
QQ3T701
nPD658xx
bv0T
658X
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transistor f422
Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
Contextual Info: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for
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50-MICRON
PD658xx
transistor f422
transistor f423
f422 transistor
transistor f421
BV09
F423
fet 13187
RJ4B
L442
bvoe
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transistor f422
Abstract: transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK
Contextual Info: i O 1993 iir n r, . . NEC E le ctro n ics Inc. Prelim inary Description CMOS-8LCX 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS c ro s s c h e c k te s t s u p p o rt February 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family are ultra-high perform
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iPD658xx
transistor f422
transistor f423
F422 transistor
transistor f421
nec product naming rule
BK-DK
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kd 2060 transistor
Abstract: saia factory 124
Contextual Info: 60 years of Know-How CATALOG 1 rs-485 OFFER of measuring instruments and Electronics Manufacturing Services WWW.LUMEL.COM.PL To meet the expectation of our customers we continuously take care of improving the quality management system. It takes place at every activity level, from the identification of the customer’s needs, through the production
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rs-485
kd 2060 transistor
saia factory 124
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omron plc CPU 41 e rs232 pin configuration
Abstract: transistor f422 PYC35 RGB 5050 IP65
Contextual Info: Panel Builder Guide 2014 Components for panels and cabinets industrial.omron.eu Welcome to our world Our best-in-class devices for your panels and cabinets Welcome to Omron’s world of advanced industrial automation. The PANEL BUILDER GUIDE is your essential tool to pre-select
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Y209-EN2-02A
PanelBuilderGuide2014
omron plc CPU 41 e rs232 pin configuration
transistor f422
PYC35
RGB 5050 IP65
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