F2 W SOT23 Search Results
F2 W SOT23 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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BAV99 |
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Switching Diode, 100 V, 0.215 A, SOT23 | Datasheet | ||
TBAV70 |
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Switching Diode, 80 V, 0.215 A, SOT23 | Datasheet | ||
TBAS16 |
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Switching Diode, 80 V, 0.215 A, SOT23 | Datasheet | ||
TBAW56 |
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Switching Diode, 80 V, 0.215 A, SOT23 | Datasheet | ||
BAV70 |
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Switching Diode, 100 V, 0.215 A, SOT23 | Datasheet |
F2 W SOT23 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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RF2364
Abstract: RF2365 f236 sot23-5 rf amplifier p12
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RF2365 RF2365 RF2364 f236 sot23-5 rf amplifier p12 | |
L282 ST
Abstract: L281 L282 TL431 TS3431 SOT-23-3Lpackage sot23 L282 ST TL431 SOT-23 MARKING AKV
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TS3431 100mA OT23-3L TL431 TS3431 OT23-3 L282 ST L281 L282 TL431 SOT-23-3Lpackage sot23 L282 ST TL431 SOT-23 MARKING AKV | |
Contextual Info: 62 7 BFU520A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU520A is part of the BFU5 family of transistors, suitable for small signal to medium |
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BFU520A BFU520A AEC-Q101 | |
Contextual Info: 62 7 BFU530A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU530A is part of the BFU5 family of transistors, suitable for small signal to medium |
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BFU530A BFU530A AEC-Q101 | |
Contextual Info: 62 7 BFU550A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU550A is part of the BFU5 family of transistors, suitable for small signal to medium |
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BFU550A BFU550A AEC-Q101 | |
Contextual Info: AH373 Internal Pull-up Hall Effect Latch Features General Description - 2.2V to 20V DC operation voltage - Built-in pull-up resistor - 25mA output sink current - Operating temperature: −40°C ~ +125°C - Package: SIP3, SOT23 AH373 is a single-digital-output Hall-effect sensor |
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AH373 AH373 | |
Contextual Info: AH375 Single Phase Hall Effect Latch Features General Description - 2.2V to 20V DC operation voltage - Temperature compensation - Wide operating voltage range - Open drain pre-driver - 25mA maximum sinking output current - Package: SIP3, SOT23 AH375 is an integrated Hall effect latched sensor |
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AH375 AH375 | |
SOT23 hall
Abstract: REGULATOR AVR R 129 Rev A AH337
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AH337 AH337 SOT23 hall REGULATOR AVR R 129 Rev A | |
EDSD-1L8MM-REEL
Abstract: QFn 64 tape carrier
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OT-23 OT-223, 481-D EIA-418 356mm EDSD-1L8MM-REEL QFn 64 tape carrier | |
vogt transformer s3
Abstract: A43AB VOGT A8 vogt f6 MC145575FU VOGT B1 vogt transformer k2 TQ3330 BC860C Motorola ti01 sot23
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MC145575/D MC145575FU TN98121000 MC14557E vogt transformer s3 A43AB VOGT A8 vogt f6 VOGT B1 vogt transformer k2 TQ3330 BC860C Motorola ti01 sot23 | |
BFS17PContextual Info: BFS17P NPN Silicon RF Transistor 3 For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17P MCs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage |
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BFS17P VPS05161 Jul-12-2001 BFS17P | |
KF5N50
Abstract: kf12n60 IC 1N4007 diode 400V 4A TO220IS 1N4007 diode bridge MB6S mje13005 DF06 IC kf13n50
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OT-23 FLP-14 KTC3003 1N4007 DO-41 MJE13003 MJE13005 O-126 KF5N50 kf12n60 IC 1N4007 diode 400V 4A TO220IS 1N4007 diode bridge MB6S DF06 IC kf13n50 | |
HT7044A-1
Abstract: HT7027A-1 HT7039A-1 HT7050A-1 0c sot89 HT7033A-1 HT7022A-1 HT7024A-1 HT70XXA-1 marking code w2 sot23-5
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HT70XXA-1 OT23-5 HT70XXA-1 HT7044A-1 HT7027A-1 HT7039A-1 HT7050A-1 0c sot89 HT7033A-1 HT7022A-1 HT7024A-1 marking code w2 sot23-5 | |
BFS17PContextual Info: BFS17P NPN Silicon RF Transistor 3 For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17P MCs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage |
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BFS17P VPS05161 BFS17P | |
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Contextual Info: HT70xxA-2 TinyPowerTM Voltage Detector Features • Low power consumption · Output voltage accuracy: tolerance ± 1% · Low temperature coefficient · Built-in hysteresis characteristic · High input voltage range up to 24V · TO92, SOT89 and SOT23-5 package |
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HT70xxA-2 OT23-5 HT70xxA-2 | |
Contextual Info: HT70xxA-2 TinyPowerTM Voltage Detector Features • Low power consumption · Output voltage accuracy: tolerance ± 1% · Low temperature coefficient · Built-in hysteresis characteristic · High input voltage range up to 24V · TO92, SOT89 and SOT23-5 package |
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HT70xxA-2 OT23-5 HT70xxA-2 | |
Contextual Info: HT70xxA-1 TinyPowerTM Voltage Detector Features • Low power consumption · Output voltage accuracy: tolerance ± 3% · Low temperature coefficient · Built-in hysteresis characteristic · High input voltage range up to 24V · TO92, SOT89, SOT23 and SOT23-5 package |
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HT70xxA-1 OT23-5 HT70xxA-1 | |
IrL 1540 N
Abstract: 1540MHz F1540 ATC100 UGF15030 Cree Microwave ZENER 26v 10UF 22UF
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UGF15030 26VDC, 1540MHz, UGF15030F UGF15030 IrL 1540 N 1540MHz F1540 ATC100 Cree Microwave ZENER 26v 10UF 22UF | |
potentiometer 1k ohmContextual Info: UGF09085 90W, 865-880 MHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband Commercial and Industrial applications in the frequency band 865 to 890 MHz. Rated with a minimum output power of 90W, it is ideal for large signal common source |
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UGF09085 MRF9085. 26VDC, 880MHz, UGF09085F UGF09085 potentiometer 1k ohm | |
Contextual Info: TSH110-TSH111-TSH112-TSH113-TSH114 Wide band low noise operational amplifiers Features TSH110: SOT23-5 ● Low noise: 3nV/√Hz ● Low supply current: 3.2mA ● 47mA output current ● Bandwidth: 100MHz ● 5V to 12V supply voltage ● Slew rate: 450V/µs |
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TSH110-TSH111-TSH112-TSH113-TSH114 TSH110: OT23-5 100MHz TSH111: OT23-5, TSH112: | |
st body marking TSH113IDT
Abstract: k309 TSH110 TSH111 TSH112 TSH113 TSH114 TSSOP14 SOT23-5 MARKING 56 marking st sot23-5 f
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TSH110-TSH111-TSH112-TSH113-TSH114 TSH110: OT23-5 100MHz 50V/s TSH111: OT23-5, TSH112: st body marking TSH113IDT k309 TSH110 TSH111 TSH112 TSH113 TSH114 TSSOP14 SOT23-5 MARKING 56 marking st sot23-5 f | |
capacitor 0805 avx
Abstract: 08055C103KATDA J940 08053G105ZATEA Bipolar NPN Transistor sot23 MRF21010
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MRF21010 MRF21010 capacitor 0805 avx 08055C103KATDA J940 08053G105ZATEA Bipolar NPN Transistor sot23 | |
TT2222
Abstract: pDS4102-DL2A b8 sot23-3 AF14 LVCMOS15 LVCMOS25 LVCMOS33 tps64203dvb spi flash programmer sot23 Marking f7
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ebug11 TPS78601KTT TT2222 pDS4102-DL2A b8 sot23-3 AF14 LVCMOS15 LVCMOS25 LVCMOS33 tps64203dvb spi flash programmer sot23 Marking f7 | |
8J marking
Abstract: diode IR 100 8K
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MMBZ5221B MMBZ5259B 350mW OT-23 OT-23, MIL-STD-202, DS18011 8J marking diode IR 100 8K |