F UD Search Results

a7y transistor

Abstract: RASH UD61466 A7X k
Contextual Info: Maintenance only UD61466 64K x 4 DRAM Features F Dynamic random access memory F F F F F F F F F F F 65536 x 4 bits manufactured using a CMOS technology RAS access times 70 ns/80 ns TTL-compatible Three-state outputs bidirectional 256 refresh cycles 4 ms refresh cycle time

RASH

Abstract: transistor a7y UD61466
Contextual Info: Maintenance only UD61466 64K x 4 DRAM Features F Dynamic random access memory F F F F F F F F F F F 65536 x 4 bits manufactured using a CMOS technology RAS access times 70 ns/80 ns TTL-compatible Three-state outputs bidirectional 256 refresh cycles 4 ms refresh cycle time

a7y transistor

Abstract: RASH soj20 Package UD61256 tsu a7y
Contextual Info: UD61256 Maintenance only 256K x 1 DRAM Features Description F Dynamic random access memory F F F F F F F F F F 262144 x 1 bit manufactured using a CMOS technology RAS access times 70 ns, 80 ns TTL-compatible Three-state output 256 refresh cycles 4 ms refresh cycle time

240VP

Contextual Info: S3-PD S 3 - U D • f i ' i M i 0 .5 % R 0. ÍP D , ± 14 UD> ■ Ii n ■ & tè S ÍÍÉ J j (4 - 20mA, 500 ft > I L - il V!i Î A ' fím f f ë 1} m m f f l ï â • f t f t i!N 4 6 2 7 7 - " Î i ï ï & m S m m Z f à m h iä f f ii 4K r ii J0 Æ. ■

mp4505

Abstract: AY 1 - 1320 1C-30
Contextual Info: MP4505 o o =/UD>NPNHBSJWB; * - U 5 > y ^ 4 « A 0 * * > • * - F 7 - f y . R f S A f f F* 4 y * I« ft • ( 8 IP * * » * * « » ) 12 P in > ft •* ■ * •. : g a f ? * « * C4fâl8«lf»)PT-5W (T»-2ôX) • : Ic<x>c)-SA ( * * ) • : h rK- i o o o ( * * >

Contextual Info: ^UD^PNP P C T 75S (*-• j y O X -f V O a > 7 2SB1024 \-ymm) > i f ffl f 7 - a /f 7 | , - f f ix : [• 'T 'f 7'ffi mm JLQ.3MAX. O 1# Ä : • hF E =2000 (S / J') ( V CE= - 2 V , täfom ErfM ft^o : I c = - 1 A ) v CE(s a t ) = -i.5V ( * * ) 2 S II1 4 1 4 ¿ a y

2SC555

Abstract: UHF/VHF 100MHZ
Contextual Info: 2SC 5/UD>NPN X t î t t s / P iu y i s - J - B h ^ y y z ? 555 _ SILICON NPN EPITAXIAL PLANAR TRANSISTOR O U H F - V H F * « A I t IB m O o « « i S t v . ' f f i f j a i O ' M ffiSLftm m ¡e « * is <pi ¡e » m & /b UHF-VHF Power Ampl i f i e r , F r equenc y M u l t i p l i e r ,

Contextual Info: ;9.29,4 ><?<4DEB8 ;<:; A@G8B B8=4I 9OK[\YOZ f f f f f f f f f f f f f Heha Pk5AG8:;<8> F 7 8 Heha Pk5A88=@:; 6@?D46D 74D4 6@<= Ekjp]_p ]nn]jcaiajp 8C3 8D3 8E Ekjp]_p naoeop]j_a 9C3 9D3 9E 877i i]t5/]p 8C =XFE0 Ekjp]_p i]pane]h Ekeh lksan Cllnkt5 75><XC Uaa kn`anejc ejbk5

Contextual Info: %1& 0,&52:$9 &20321(176 ,1'(5 *8,'( 5(6,67,9( 3$'6 : SHDN S  $YHUDJH SRZHU : )UHTXHQF\ UDQJH  0DOH ,PSHGDQFH 8 '& ²  *+] á 5   á 5   á 5   /2: 32:(5 7(50,1$7,216 : SHDN S  $YHUDJH SRZHU :

5G651

Abstract: 79LO 3NW2 6LQ5
Contextual Info: QJOLVK 'DQVN F &RS\ULJKW F &RS\ULJKW URZ URZ 1RUVN 6YHQVND 6XRPL 1HGHUODQGV F &RS\ULJKW    U NNH UDG UDG ULYL ULM U NNH UDG UDG ULYL ULM /LVW /LVWH /LVWH /LVWD  /LMVW 7EO 7DEHO 7DEHOO 7DEHOO 7DXO

02-AUG-02

Contextual Info: HY5PS12423 L F HY5PS12823(L)F HY5PS121623(L)F 512Mb DDR-II SDRAM HY5PS12423(L)F HY5PS12823(L)F HY5PS121623(L)F Rev. 0.52/Nov. 02 1 HY5PS12423(L)F HY5PS12823(L)F HY5PS121623(L)F REVISION HISTORY Revision No. Revision Date Page of Revsion Description of Change

MG20Q6EK1

Abstract: Burr-Brown IC data book free download 95A6 mg20Q6EK
Contextual Info: S/UD^NPNEMffiTOGTRts;^-^ o * - 9 • « ¿ • ?- UV hy h 7 MG20Q6EK1 K 5 - Í yffl 3 t t T f c * 3, W % ft 9&6mmilLZti r ^ i - r 0 • n ia i7 > j- s m >; y t - k ^ ^ « l r i ' à t o • iîiE t t f f it t f f i& P K t '. : h p E= 100 JR/J' ( Ic = 20 A )

Contextual Info: HY5PS12423 L F HY5PS12823(L)F HY5PS121623(L)F 512Mb DDR-II SDRAM HY5PS12423(L)F HY5PS12823(L)F Rev. 0.52/Nov. 02 1 HY5PS12423(L)F HY5PS12823(L)F HY5PS121623(L)F REVISION HISTORY Revision No. Revision Date Page of Revsion Description of Change 0.2 June.02 page3

MA342-M

Abstract: MA344 MA348 MA353 MA360 MA363 MA365 MA366 MA368
Contextual Info: - 198- m s tt £ MA 342 —M fôT MA344 fêT MA3 48 MA353 fôT MA360 tëT fâT MA363 MA365 fôT MA366 tôT MA367 tôT MA368 fôT MA370 fôT MA371 fôT MA372 «T MA840 «T MV201 ND3Q48-3D BS m ^ rm m f t * S fe Ct, C j * pF p Vrm Vr (mW) (V) (V) min typ AFC

2SB502A

Abstract: 2SB503A 2SB50 2SD103 2sb502a-y 150X150X2 16 LF 660A 2SB503A-R TRANSISTOR K5C k5c transistor
Contextual Info: 2S b 5 ^ 2SB 5 O V 3 y p N P = m m w f r - * f f i h ^ y v 7 s 5 i i I *f f l fi INDUSTRIAL APPLICATIONS O o A udio Pow er A m p lifie r and R eg u lato r A p pli ca tio n e • 3 ^ » Ö W# 2 • ; • X i y ? ï Pc=25W v C E sat ifE E rfS W ; = VK BO =

hyb18t512160BC-3

Abstract: HYB18T512 HYB18T512800BF-2.5 800E HYB18T512400B DDR2-667C HYB18T512800BF37 HYB18T512160BC3S
Contextual Info: May 2007 HYB18T512400B[C/F] HYB18T512800B[C/F] HYB18T512160B[C/F] 512-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.1 Internet Data Sheet HYB18T512[40/80/16]0B[C/F] 512-Mbit Double-Data-Rate-Two SDRAM HYB18T512400B[C/F], HYB18T512160B[C/F], HYB18T512800B[C/F]

ED 78A

Abstract: SH565
Contextual Info: Chip Inductors &KLS ,QGXFWRUV 6HULHV 7\SH Japan &KLS 5  5  1' 1& 1$ )& )$ )% 6$ 3( 3& 3$ ($ 5) 6L]H  ( 6L]H  1' 6L]H  & 6L]H  $ 6L]H  )% 6L]H  1RQ ZLQGLQJ 5) ( DQG ZLUH ZRXQG W\SH FKLS LQGXFWRUV IRU DXWRPDWLF PRXQWLQJ DQG KLJKGHQVLW\ PRXQWLQJ

Contextual Info: -í % —F / Light Emitting Diodes LA-121 LA-121 A K ' > V - X t £ , A K Series LA-121 AK Series Two color High Luminance LED Numeric Displays • Dimensions U nit: mm • K / Selection Guide 0/3-5 t 'J f p / f 7 1> f S T 't 3 J: 9 I C x '- t f - f > ¿f f t * 2 f e f g

Contextual Info: 86,.6 ;9<91AB?5 9<A5?;5491A5 >=D5? ?5:1F 6LHYZWLX Heha Ok5AG8:;?8 f f f f f f f Heha Ok5AS<78<;<8? Heha Ok5AERE7@7797:779? /FE pula0 ERE7@7797:779@ /CE pula0 3=<A13A 41A1 3=9: Ekjp]_p ]nn]jcaiajp 8C38E Ekjp]_p naoeop]j_a 9C39E 877i i]t5/]p 8C =WFE0 Ekjp]_p i]pane]h

Contextual Info: HY5PS12423 L F HY5PS12823(L)F 512Mb DDR-II SDRAM HY5PS12423(L)F HY5PS12823(L)F Rev. 0.51/Oct. 02 1 HY5PS12423(L)F HY5PS12823(L)F REVISION HISTORY Revision No. Revision Date Page of Revsion Description of Change 0.2 June.02 page3 added tCK on the operating frequency table

2SC241

Abstract: 2SC2464 cjgl
Contextual Info: 104 - - m íBt i l fâ T • 2 S C 2 4 0 4 B É Æ fê tt a tt Ä ft i i m 3 f T MHz lc(ntA) 15 C re (p F ) 0 .8 0 IF t i l B E Ä Ä , Pc(mW) 150 PG (dB) Y7V'S'S Tj CC) 150 NF(dB) RF i § t S , t '- f t 2 S C 2 41 □ —A f f i â : Ä i s & i f t a f f l (am ¡ a s * w s , J I

Contextual Info: HY5DU56422C L F HY5DU56822C(L)F HY5DU561622C(L)F 256M DDR SDRAM HY5DU56422C(L)F HY5DU56822C(L)F HY5DU561622C(L)F This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

hynix DDR2-533

Abstract: HY5PS121621 HY5PS12821
Contextual Info: HY5PS12421 L F HY5PS12821(L)F HY5PS121621(L)F 512Mb DDR2 SDRAM HY5PS12421(L)F HY5PS12821(L)F HY5PS121621(L)F This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

DDR2-5335

Contextual Info: HY5PS12421 L F HY5PS12821(L)F HY5PS121621(L)F 512Mb DDR2 SDRAM HY5PS12421(L)F HY5PS12821(L)F HY5PS121621(L)F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.