EVI 330 Search Results

EE80251S1-0000-A99

Contextual Info: SUNON SPECIFICATION FOR APPROVAL . j CUSTOMER DESCRIPTION DC BRUSHLESS FAN DIMENSIONS 80X80X25 mm MODEL EE80251SI-0000-A99 SUNON SPEC. NO. D08029840G-00 CUSTOMER APPROVAL NO. APPROVED BY CUSTOMER AUTHORIZED / 41 DRAWN Evi r J y CHECKED APPROVED 4 /3

MC10H181

Abstract: MC1672
Contextual Info: B PIN ASSIGNMENT oi ÿ J J i 'è S Z 2 n n n n n n n n < in i i i i i c s s i 350 270 1 Z M m i i i i i i i i i c i c <0 C X X C C at ^ in o o> o j evi o i o i o> oi CO oi I I I O) O ^ 9 r N N N I i i m oi OJ oi i I <- CN CO CO evi CN CM* eg fx. CN CN i I I i

Contextual Info: 3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO 131,072x18 262,144x18 PRELIMINARY IDT72V295 IDT72V2105 Irtegiated D eviœ Technology, lie . FEATURES: • Choose among the following memory organizations: IDT72V295 131,072x 18 IDT72V2105 262,144x 18 • Pin-compatible with the IDT72V255/72V265 and the

Contextual Info: Æutran PRODUCT D EVI CE S .I NC . N-CHANNEL ENHANCEMENT MOS FET 3301 ELECTRONICS WAY • WEST P ALM BEACH, FLORIDA 33407 TEL: 407 8 4 8 - 4 3 1 1 • TLX: 51-343S « F A X : (407) 863-5946 ABSOLUTE MAXIMUM 1000V, 4.4A, 4 . on RATINGS PARAMETER UNITS SYMBOL

72V3680

Contextual Info: Irtegiated D eviœ Technology, lie . 3.3 VOLT HIGH-DENSITY SUPERSYNC II 36-BIT FIFO 4,096 x 36 8,192 x 36 16,384x36 32,768 x 36 65,536 x 36 131,072x36 FEATURES: • Choose among the following memory organizations: IDT72V3660 4,096 x 36 IDT72V3670 8 ,1 9 2x3 6

Contextual Info: 7 DRAWI NG THIS MADE IN DRAWI NG THIRD 15 ANGL E LNPUBLI5HED COPYRIGHT 6 5 3 4 2 PROJECTION RELEASED 19 AMP BY FOR PUBLICATION INCORPORATED. ALL I NTERNATI ONAL RIGHTS DI ST LOC 19 REV I 5 I0N5 00 CM RESERVED. ZONE LTR 5 DE5CRIPTION R EVI SED PER EC DATE

MX23256

Abstract: MX23256-15PC 27256 EPROM 25256 tny 178 tm 1640
Contextual Info: MACRONIX 34Ê INC MX23256/57 D • 5bööööE DDQD17Q 3 .EVI p r e l im in a r y 3 2 ,7 6 8 X 8 STATIC READ ONLY MEMORY T ^ - g - is FEATURES DESCRIPTION . 32,768 X 8-bit organization . Access time - 150 ns max . Current-Operating; 80 mA max Standby: 20 mA max

TRANSISTOR 434

Abstract: BFP650 HOME AUTOMATION USING GSM AN196 BFR380F bf 434 BFP450 ag 20 taiyo BFR380 RF MODULE 434Mhz
Contextual Info: BF R38 0F Dri v er A m pl i fer fo r 434 M Hz I S MBan d A ppl i c ati ons Appl i c ati o n N ote A N 196 Revision: Rev1.1 2010-09-28 RF and P r otec ti on D evi c es Edition 2010-09-28 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG

Cordless Phone circuit diagram

Abstract: 2.4GHz Cordless Phone circuit diagram BFP750 cordless phone circuit S parameters of 5.8 GHz transistor SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR RF MODULE CIRCUIT DIAGRAM dect Cordless Phone system block diagram murata wifi saw filter cordless phone ic
Contextual Info: BF P750 BF P750 a s a Dri ve r A mpl i fi er for 5.8 G Hz Cor dl es s P hon e A ppl i c a t i ons Appl i c ati o n N ote A N 246 Revision: Rev 1.1 2010-09-24 RF and P r otec ti on D evi c es Edition 2010-09-24 Published by Infineon Technologies AG 81726 Munich, Germany

Contextual Info: REV. R EVI SI ON S ECN NO. A DRN. CKD. APP. NEW RELEASE DATE M.C. >— . 0 5 0 TYP 12 PLCS . 1 0 0 TYP; 12 PLCS .692 ± .0 0 7 . 0 7 9 D I A NOM MOUNTING P I N S TYP; 4 PLCS . 1 4 0 ± . 0 0 3 —i TYP T ~ r 0 . 0 7 6 ±.002 TYP; 4 PLCS . 1 7 5 TYP 1 2 80 ± . 0 0 3 _

XC-880-A

Abstract: NSM4000A NSM3915 NSM4000 5252 f 1101 PAGE 29 National Semiconductor CAT 84 XC-556-R nsm1416 NSM3914 XC-88-PD
Contextual Info: Z CCUj OS II o iA a. evi e o c o ^ "'3 '^ '^ r^ -^ '^ r'» -^ '^ -« 3 -T i-^ -^ i-in in i'« -r''r'-C M e M C \ic \je \ic M C M e \ic N C M C \jc N c v jc M e M C M C M c \jc o o o c o e o o o e o c o o o e o o o c o e o e o c o e o o o c b c ò '-'-’- ’- T - ' - T - i - T - i - i - T - i - i - T - i - i n i n n M M n w w w n e o c o e o m w w c o w n n n n w c o n n c o n n w c o w n n M c o n m M c o c o '

XC-554-R

Abstract: NSM3914 NSM4000A XC-556-R NSM3915 XC-55-PC nsm1416 NSM-1416 NSM4000 nsm39148
Contextual Info: Z o iA a. evi C CUj OS II e o c o ^ "'3 '^ '^ r^ -^ '^ r'» -^ '^ -« 3 -T i-^ -^ i-in in i'« -r''r'-C M e M C \ic \je \ic M C M e \ic N C M C \jc N c v jc M e M C M C M c \jc o o o c o e o o o e o c o o o e o o o c o e o e o c o e o o o c b c ò '-'-’- ’- T - ' - T - i - T - i - i - T - i - i - T - i - i n i n n M M n w w w n e o c o e o m w w c o w n n n n w c o n n c o n n w c o w n n M c o n m M c o c o '

tea 1601 t

Abstract: tea1601 TEA1601 PHILIPS tea 1601 C2026 K C2026 Y transistor C2026 2SK2810 J10MM AN00013
Contextual Info: APPLICATION NOTE 26kV/30W High Voltage Generator with TEA1601 Resonic controller AN00013 Philips Semiconductors Philips Semiconductors O:; ,-+, :308%+ +)2)6%836 ;-8, 8)% 6)732-' '3286300)6 Application Note AN00013 Abstract 8LMW VITSVX HIWGVMFIW E ,MKL :SPXEKI +IRIVEXSV ; VIWSRERX 7147 JSV QSRMXSV ERH XIPIZMWMSR ETTPMGEXMSR FEWIH YTSR XLI 8)%

HDMI SWITCH SCHEMATIC

Contextual Info: PRELIMINARY CM20LT Features • • • • • • Product Description Long HDMI cable support with integrated I2C accelerator Low Capacitance DDC for HDMI Compliance Translates I2C level to CMOS level on DDC line Overcurrent output protection for Source

NGA-689

Abstract: AGB3307 GA68
Contextual Info: Quick Reference Guide Using the AGB3307 as a Replacement for the NGA-689 The AGB3307 InGaP HBT Gain Block from ANADIGICS is a wideband device with high linearity, low noise and low distortion that can be used as a replacement for the NGA-689 device from Sirenza Microdevices. Both

W88W

Abstract: NGA-589 AGB3303 ww39
Contextual Info: Quick Reference Guide Using the AGB3303 as a Replacement for the NGA-589 The AGB3303 InGaP HBT Gain Block from ANADIGICS is a wideband device with high linearity, low noise and low distortion that can be used as a replacement for the NGA-589 device from Sirenza Microdevices. Both

AGB3302

Abstract: NGA-489 ga649
Contextual Info: Quick Reference Guide Using the AGB3302 as a Replacement for the NGA-489 The AGB3302 InGaP HBT Gain Block from ANADIGICS is a wideband device with high linearity, low noise and low distortion that can be used as a replacement for the NGA-489 device from Sirenza Microdevices. Both

11ES 04

Abstract: ph 77 H-18 W-10 FCR48 IT 8755 E
Contextual Info: IC dependence of oscillating characteristics uPD784038GC. FCR4.0MC5 - STD Room Temp. Vdd CV3 5 Item a*e Rd Cohml 3300 UPD784038GC. - H-10 FCR4.0MC5 Vdd- 5 CV] (Flg.a-d) Ta- 20 CdegJ Typical Daaping re»I«tance(Rd) dependence of osci lilting characteristic!

10uf electrolytic

Abstract: MS-012AA SC1540 SC1540A
Contextual Info: SC1540 A 300mA And 500mA Low Dropout Voltage Regulators With Enable POWER MANAGEMENT Description PRELIMINARY Features u u u u The SC1540 and SC1540A are high performance low dropout positive voltage regulators designed for use in applications where power management is critical, such

TC-2511

Abstract: tv horizontal output number 2SD1709 m 150 diode
Contextual Info: C o n tin u e d fro m preceding page. Absolute Maamum RaUngsT,= 25"C Type •.Case ■. Applications VcBO Vceo V sbq Ic Kiectriul Chuacurwtica/T,= 25t taso Ti *TC=•2511 Number fens V« au ] Vcs m m £V3 fA] IWj [Ai [VI T0220 T0220 High-Definition Display Hor. Def. Output

Contextual Info: cv V A N A I M A M D T FINAL C 0M 'L:-7/10/12/15 IND:-10/12/15/20 M A C H 5 -5 1 2 /M A C H 5 L V -5 1 2 I S C O M P A N Y MACH5-51 2/1 20-7/10/1 2/1 5 MACH5-512/192-7/10/12/15 MACH5-512/160-7/10/12/15 MACH5-512/256-7/10/12/15 MACH5-512/184-7/10/12/15 MACH5LV-512/120-7/10/12/15

MCH18

Abstract: MCR03 SPA-1118 SPA-1118Z TAJB106K020R
Contextual Info: SPA-1118 Product Description Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

ICX404AL

Abstract: sony ccd 1080 ccd sony super HAD II super had ccd H01-H02 ACXD1267AN X492 ZE12 ccd sony super HAD 2 ccd sony super HAD
Contextual Info: SO N Y ftÄ 6 m m ICX404AL 1 / 3 1 ! E IA Él If ST IC X 404A L{iEIA ^^:i7)^Ä 6m m ( l / 3 M ) Ê H tf T * * # ^ 7 C Ü L /c > i > ? 7 'f ^ C C D ^ f ö t i f f # i'C l'o « p°ICX054BL^^L, 1/ > V , S/N& 7 >f -)V YMMWifrlti Jgjg, * 5 7, D LtLtZo "TIS& H -Í- '> -V 7 ? f ë f ê ÿ ^ L Í 't o

Contextual Info: PANASONIC INDL/ELEK -CIC> 72 6932852 P ANA SON IC ] F § b c]32ßS2 GOGbMAD 7 f " IND LtELECTRON IC 72C 0 64 8 0 D _ > Tan 3304 M N 3 3 4 Æ ) 5 1 2 & S fë f|J± B B D 512-Stage U lt r a L o w V o ltag e O peration B B D H M N 3304 ü ia-i£K&512fô