EUTECTIC Search Results

diode 028

Abstract: 1n4148 die MIL-PRF-19500 1N4148-1 HCR4148D HCR4148M HCR4148MTX
Contextual Info: OPTEK Product Bulletin HCR4148 September 1996 Surface Mount Switching Diode Types HCR4148D, HCR4148M, TX, TXV Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • Constructed from ceramic, metal, and glass for rugged environments • Eutectic mounted silicon die.

MFK Series

Contextual Info: Soldering Surface Mount Reflow Surface Mount Capacitors. Recommended Reflow Soldering Conditions The following conditions are recommended for reflow soldering of surface mount capacitors onto a glass epoxy circuit board of 90 x 50 x 0.8 mm with resist by cream solder (eutectic solder).

DM6030HK

Abstract: MAAP-000077-SMB004 AN3016 DM4030LD MAAP-000077-PED000 MAAP-000077-PKG001 MAAP-000077-SMB001 MAAPGM0077-DIE
Contextual Info: Amplifier, Power, 13W 0.7-2.5 GHz MAAP-000077-PED000 Rev — Preliminary Datasheet Features ♦ 13 Watt Saturated Output Power Level ♦ Eutectically Mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage 6-10V Operation

sac 405

Abstract: WLCSP flip chip IPACK2005 sensors mttf WLCSP chip mount SAC405 thetaja wlcsp "sac 405"
Contextual Info: The Effect of Electromigration on Eutectic SnPb and Pb-free Solders in Wafer Level-Chip Scale Packages Joanne Huang1, Stephen Gee2, Luu Nguyen2, King-Ning Tu1 1 Department of Materials Science and Engineering, University of California - Los Angeles, Los Angeles,

LED LASER

Abstract: ausn submount
Contextual Info: LSUB Vishay Electro-Films Ceramic Submount for High Power LED FEATURES • Ultra-low thermal resistance • Eutectic or epoxy LED die attach pads • Surface-mounted component assembly APPLICATIONS The LSUB series substrates are ceramic LED package bases designed to provide thermal management for high

Contextual Info: LNE1 Die Specifications LNE1 G D S Backside: Source All dimensions in mils. Bonding Pads3 Dimensions Recommended Assembly Material 2 Die Geometry Length1 Width LNE1 30 30 Thickness 11 ± 1.5 Backside Metal Au Material Al-Si Notes: 1. Maximum values 2. Standard Au back is alloyed for optimum eutectic die attach. Ag backing is optional.

A210C

Abstract: CTX4
Contextual Info: Surface Mount TCXO • 4.0 mm max. height • Wide temperature range CARDINAL COMPONENTS CTX4 • Various input supply voltage options • Eutectic reflow soldering possible Part Numbering Example: CTX4 L Z - A3 B3 - 15.360 CTX4 L Z A3 B3 15.360 SERIES CTX4

Contextual Info: Recommended Reflow Soldering Profile Limiting Values* The below temperature profile for moisture sensitivity characterization is based on the IPC/JEDEC joint industry standard: J-STD-020D-01. Profile Feature SnPb eutectic assembly Pb-free assembly Average ramp-up rate Tsmax to Tp

Contextual Info: MAAP-000078-PED000 Amplifier, Power, 12W 2.0—6.0 GHz M/A-COM Products Preliminary: Rev B Features ♦ 12 Watt Saturated Output Power Level ♦ Eutectically Mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage 8-10V Operation

x-band power amplifier

Abstract: DM6030HK
Contextual Info: Amplifier, Power, 16W 1.3-2.5 GHz MAAP-000076-PED000 Rev A Preliminary Datasheet Features ♦ 16 Watt Saturated Output Power Level ♦ Eutectically Mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage 6-10V Operation

DM6030HK

Contextual Info: MAAP-000074-PED000 Amplifier, Power, 8W 2.0-8.0 GHz Rev A Preliminary Datasheet Features ♦ 8 Watt Saturated Output Power Level ♦ Eutectically mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage 6-10V Operation

Contextual Info: raOEXyXgTT ÄTFÄ[L N - C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .019" (0.483mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2% .

2N2606

Contextual Info: » M © ? ©ÄY£\[L© P -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 Backside Contact: 3,000 À Gold ASSEM BLY RECOMMENDATIONS 016" (0.406mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.

Contextual Info: Ä 1TM, Q ( N -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 .017" i f t l (0.432mm) Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS . 016 " (0.406mm) Die Size- It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2% .

Contextual Info: THIN FILM BACK CONTACT RESISTORS MSBC SERIES The M S B C series back contact chip resistor offers designers a space-saving design in a . 0 2 0 " x . 0 2 0 " size that requires only one wire bond. The chip backside provides the other contact with eutectic or conductive epoxy attachment to the

BGA PROFILING

Abstract: fine BGA thermal profile M21131 hot air bga M21151 M21161 M21141G reflow hot air BGA M21136 M21151V
Contextual Info: 211xx-APP-002-A April 2006 SMT BGA Ball Grid Array Eutectic Solder Balls Application Note Products Affected: M21131, M21131V, M21136, M21141G4, M21141G5, M21151, M21151V, M21156, M21161G4, M21161G5 Introduction The objective of this application note is to provide the basic SMT design and process requirements necessary to

transistor CD 910

Contextual Info: PRELIMINARY DATA SHEET SSDI y oo S P T 3571 HIGH FREQUENCY TRANSISTOR NPN CASE STYLE 14830 VALLEY VIEW LA MIRADA, CA.90638 213 921-9660 TWX 910-583-4807 FAX 213-921-2396 FEATURES ► t t 900 MHz fT MIN, 4 GHz fT MAX GOLD EUTECTIC DIE ATTACH LOW NOISE FIGURE < 4 dB

2N5911

Abstract: Junction-FET 2N5397 2N5398 2N5912 U257 FS3D
Contextual Info: -Ælitron [F> ®®[yj Tr N -C H A N N E L J U N C T IO N FET Devices. Inc. CHIP NUMBER IN CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS . Hr (0.533mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.

2N2606

Abstract: 2N3376 2N3378 2N3698 2N2608 2N3695
Contextual Info: -Ætttron Devices, Inc. P -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS _ .016" _ 0.406mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.

IC 7424

Abstract: SFT5094 pnp transistor 600V TRANSISTOR 714
Contextual Info: SFT5094 SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSD1 (7734) • Fax: (714) 522-7424 1 Amp 600 Volts PNP TRANSISTOR Designer’s Data Sheet FEATURES: Low Profile Surface Mount Package 200° C O perating, Eutectic Die Attach

UC734

Abstract: 2N4116 2N3823 fet 2N3823 2n5105 2N5485 2NS105 2N3452 2N5104
Contextual Info: Contran e^@[D iij(gTr a i m , ( IM-CHAIMIMEL J U N C T I O N FE T Devices. CHIP NUMBER CONTACT METALLIZATIOIM Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 À Gold ASSEMBLY RECOMMENDATIONS It is advisable that: (0.305mm) a) the die be eutectically mounted with gold silicon preform 98/2%.

Contextual Info: PHOTODIODE InGaAs PIN photodiode G9230-01 Uses small package with no wire Features Applications l Easy to handle since there are no wires on chip AnSn eutectic bonding Optical fibers can be brought closer to the chip l Miniature package: 2 x 2 × 1 mm l High sensitivity: 0.95 A/W Typ. (λ=1.55 µm)

OPA9437EU

Abstract: Au Sn eutectic
Contextual Info: Infrared LED Chip OPA9437EU GaAlAs/GaAs 1. Material Substrate GaAs P Type Epitaxial Layer GaAlAs(N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy (Au/Sn Eutectic Metal) Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF

eutectic

Contextual Info: VF53 Die Specifications VF53 G S Backside: Drain All dimensions in mils. Bonding Pads3 Dimensions Recommended Assembly Material 2 Die Geometry Length1 Width VF53 30 56 Thickness 8 ± 1.0 Backside Metal Au Material Al/Si Notes: 1. Maximum values 2. Standard Au back is alloyed for optimum eutectic die attach. Ag backing is optional.