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    EUDYNA TAPE Search Results

    EUDYNA TAPE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LMX2325TMX-G
    		Rochester Electronics LLC LMX2325 - RoHS - T/R, PLL Freq Synthesizer PDF Buy
    HSCHD02AR0001R
    		Amphenol Communications Solutions HSC Right Angle plug,Tape and Reel,Black housing PDF
    HSDNBSPPCB14WBA
    		Amphenol Communications Solutions HSD Right plug,Tape and Reel,Cream white housing PDF
    HSCHD02BR1001R
    		Amphenol Communications Solutions HSC Right Angle plug,Tape and Reel,Blue housing PDF
    HSCHD02CR2001R
    		Amphenol Communications Solutions HSC Right Angle plug,Tape and Reel,Brown housing PDF

    EUDYNA TAPE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Eudyna Devices

    Abstract: fmm106
    Contextual Info: FMM1061VJ GaAs MMIC FEATURES • Operation to 6.0 GHz • Input Frequency divide by 4, OUT and OUT • -5V or+5V DC Single Power Supply • External 50 ohm Load Driving Capability • Small 10 pin Hermetic SMT-10 Package (VJ) • Tape and Reel available


    Original     		FMM1061VJ SMT-10 FMM1061VJ Eudyna Devices fmm106 PDF

    EUDYNA

    Contextual Info: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the


    Original     		FLU17XM FLU17XM EUDYNA PDF

    FLU35XM

    Abstract: Eudyna Devices
    Contextual Info: FLU35XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=35.5dBm Typ. • High Gain: G1dB=12.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU35XM is a GaAs FET designed for base station applications in the


    Original     		FLU35XM FLU35XM V4888 Eudyna Devices PDF

    "Frequency Divider"

    Abstract: FMM1103VJ Eudyna Devices
    Contextual Info: FMM1103VJ GaAs Microwave Frequency Divider FEATURES • Operation to 12.0 GHz • Input Frequency divide by 8, OUT and OUT • -5V or+5V DC Single Power Supply • External 50 ohm Load Driving Capability • Small 10 pin Hermetic SMT-10 Package (VJ) • Tape and Reel available


    Original     		FMM1103VJ SMT-10 FMM1103VJ Voltag4888 "Frequency Divider" Eudyna Devices PDF

    FLU10XM

    Contextual Info: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the


    Original     		FLU10XM FLU10XM V4888 PDF

    FLU17XM

    Contextual Info: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the


    Original     		FLU17XM FLU17XM V4888 PDF

    Contextual Info: FLU35XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=35.5dBm Typ. • High Gain: G1dB=12.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU35XM is a GaAs FET designed for base station applications in the


    Original     		FLU35XM FLU35XM Gate-Sour88 PDF

    Contextual Info: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the


    Original     		FLU10XM FLU10XM PDF

    FHX76LP

    Contextual Info: FHX76LP Super Low Noise HEMT FEATURES • Low Noise Figure: NF=0.40dB Typ. @f=12GHz • High Associated Gain: Gas=13.5dB (Typ.)@f=12GHz • High Reliability • Small Size SMT Package • Tape and Reel Packaging Available DESCRIPTION TM The FHX76LP is a low noise SuperHEMT product designed for DBS


    Original     		FHX76LP 12GHz FHX76LP Tota4888 PDF

    TM 1628 Datasheet

    Abstract: FHX76LP 083-6 s-parameter s11 s12 s21 10000 RM1101
    Contextual Info: FHX76LP Super Low Noise HEMT FEATURES • Low Noise Figure: NF=0.40dB Typ. @f=12GHz • High Associated Gain: Gas=13.5dB (Typ.)@f=12GHz • High Reliability • Small Size SMT Package • Tape and Reel Packaging Available DESCRIPTION TM The FHX76LP is a low noise SuperHEMT product designed for DBS


    Original     		FHX76LP 12GHz FHX76LP Tota4888 TM 1628 Datasheet 083-6 s-parameter s11 s12 s21 10000 RM1101 PDF

    FHX76LP

    Abstract: NF04 065mm Eudyna Packaging
    Contextual Info: FHX76LP Super Low Noise HEMT FEATURES • Low Noise Figure: NF=0.40dB Typ. @f=12GHz • High Associated Gain: Gas=13.5dB (Typ.)@f=12GHz • High Reliability • Small Size SMT Package • Tape and Reel Packaging Available DESCRIPTION TM The FHX76LP is a low noise SuperHEMT product designed for DBS


    Original     		FHX76LP 12GHz FHX76LP Temperatur4888 NF04 065mm Eudyna Packaging PDF

    Eudyna Devices X BAND power amplifiers

    Abstract: FSX017LG Eudyna Devices
    Contextual Info: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION


    Original     		FSX017LG FSX017LG 12GHz. U4888 Eudyna Devices X BAND power amplifiers Eudyna Devices PDF

    FLU35XM

    Contextual Info: FLU35XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=35.5dBm Typ. • High Gain: G1dB=12.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU35XM is a GaAs FET designed for base station applications in the


    Original     		FLU35XM FLU35XM V4888 PDF

    Eudyna Devices

    Abstract: ml marking FMM1062ML eudyna an
    Contextual Info: FMM1062ML GaAs MMIC FEATURES • Low Power Consumption: 60mW Typ. • Operation to 6.0 GHz • Input Frequency divide by 4, OUT and OUT • -3V (or+3V) DC Single Power Supply • External 50 ohm Load Driving Capability • Small 6-pin Plastic Package for SMT applications (ML)


    Original     		FMM1062ML FMM1062ML Paramete4888 Eudyna Devices ml marking eudyna an PDF

    FHX04LG

    Abstract: FHX04 FHX05LG FHX06LG low noise hemt 2-18G 12GAS
    Contextual Info: FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		FHX04LG, 12GHz FHX04) FHX05LG, FHX06LG 2-18GHz FHX04LG FHX04 FHX05LG low noise hemt 2-18G 12GAS PDF

    FSU02LG

    Abstract: Eudyna Devices FUJITSU RF 053 DC bias of gaas FET
    Contextual Info: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


    Original     		FSU02LG FSU02LG Dissipa4888 Eudyna Devices FUJITSU RF 053 DC bias of gaas FET PDF

    FSU01LG

    Abstract: Eudyna Devices
    Contextual Info: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package


    Original     		FSU01LG FSU01LG Eudyna Devices PDF

    FHX35LP

    Abstract: FHX35LG WG 924 FHX35
    Contextual Info: FHX35LG Super Low Noise HEMT FEATURES • Low Noise Figure: 1.2B Typ. @f=12GHz • High Associated Gain: 10.0dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		FHX35LG 12GHz FHX35LG 2-18GHz reliabili4888 FHX35LP WG 924 FHX35 PDF

    Contextual Info: FHX35LG Super Low Noise HEMT FEATURES • Low Noise Figure: 1.2B Typ. @f=12GHz • High Associated Gain: 10.0dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		FHX35LG 12GHz FHX35LG 2-18GHz the88 PDF

    Contextual Info: FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		FHX04LG, 12GHz FHX04) FHX05LG, FHX06LG 2-18GHz PDF

    FHX13LG

    Abstract: FHX13 FHX14LG
    Contextual Info: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg ≤ 0.15µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		FHX13LG, FHX14LG 12GHz FHX13) FHX14LG 2-18GHz FHX13LG FHX13 PDF

    08/bup 3110 transistor

    Contextual Info: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		FHC40LG FHC40LG 2-12GHz 08/bup 3110 transistor PDF

    high power FET transistor s-parameters

    Abstract: ED-4701 FLU35ZM High Power GaAs FET
    Contextual Info: FLU35ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=35.5dBm typ. ・High Gain: G1dB=11.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU35ZM is a GaAs FET designed for base station and CPE


    Original     		FLU35ZM FLU35ZM high power FET transistor s-parameters ED-4701 High Power GaAs FET PDF

    Contextual Info: FLU10ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=29.5dBm typ. ・High Gain: G1dB=13.0dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU10ZM is a GaAs FET designed for base station and CPE


    Original     		FLU10ZM FLU10ZM PDF