EU02Z Search Results

EU02

Abstract: EU01 EU01A EU01Z EU02A EU02Z
Contextual Info: Fast-Recovery Rectifier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter Type No. VRM (V) EU01Z 200 EU01 400 EU01A 600 EU02Z 200 EU02 400 EU02A 600 EU 1Z 200 EU 1 400 EU 1A 600 I F (AV) (A) IFSM (A) Tj (°C) Tstg (°C) IR (µA)

Contextual Info: Fast-Recovery Rectifier Diodes Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter VRM （V） Type No. EU01Z 200 EU01 400 EU01A 600 EU02Z 200 EU02 400 EU02A 600 EU 1Z 200 EU 1 400 EU 1A 600 I F（ AV） （A） IFSM （A） Tj Tstg

EU02Z

Contextual Info: SANKEN ELECTRIC CO., LTD. EU02Z 1. Scope The present specifications shall apply to an EU02Z. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 041221 1／5 61426-01 SANKEN ELECTRIC CO., LTD.

EU02

Contextual Info: EU02Z-EU02A High Efficiency Rectifiers VOLTAGE RANGE: 200- 600 V CURRENT: 1.0 A DO - 41 Features Low cos t Diffused junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with freon, Alcohol, lsopropand and s im ilar solvents

EU02A

Abstract: EU02 EU02Z
Contextual Info: BL GALAXY ELECTRICAL EU02Z Z -EU02A(Z) VOLTAGE RANGE: 200- 600 V CURRENT: 1.0 A HIGH EFFICIENCY RECTIFIER FEATURES DO - 41 Low cos t Diffused junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with freon, Alcohol, lsopropand and

Contextual Info: Part Number IFSM A Tj (°C) 50Hz ( ) is with Half-cycle Sinewave Heatsink Single Shot t rr 1 (µs) VR = VRM VR = VRM Ta (°C) max max IF / I FP (mA) 2 (µs) IF / I FP (mA) Rth (j- ) Mass Fig. Rth (j-c) (g) No. (°C/W) 15 –40 to +150 2.5 0.25 10 150 100

10zrl

Contextual Info: General-purpose Diodes Rectifier Diodes • Surface-mount Type Absolute Maximum Ratings Part No. VRM V 1.0 1.0 10 –40 to +150 0.98 1.0 10 30 –40 to +150 1.0 1.0 10 45 –40 to +150 0.98 1.0 10 I FSM (A) 0.9 30 –40 to +150 SFPM-62 1.0 45 SFPM-54 0.9

GH-3S

Contextual Info: SANKEN ELECTRI C U S A HE Fast Recovery Diodes IV r m : 1 0 0 — D I ? 741 ODDDI ET fi | • I o : 0 .3 - 1 5 0 0 V T RH/ES/RS/RH/GU/RU/GH/EU V rsm V V rm (V) Io (A) Type N o \ ^ RH 1Z RH 1 RH 1A RH 1B RH 1C ES01Z ES01 ES01A ES01F ES 1Z ES 1 ES 1A ES 1F

Contextual Info: 5-2. Fast Recovery Rectifier Diodes Axial Type Ta = 25°C Absolute Maximum Ratings Type No. RC 2 EH 1Z VRM IF (AV) IFSM (V) (A) (A) 2000 0.20 20 VF (V) IR (µA) trr1 (µs) trr2 (µs) (°C) max max max max –40 to +150 2.00 10 4.0 1.30 Tj (Ta = 25°C) Absolute Maximum Ratings

AS01

Abstract: AU01 AU01Z AU02 AU02Z EU01 EU01Z EU02 EU02Z FMU-12S
Contextual Info: 4-2 Fast Recovery Diodes ●Thru-Hole VRM V 200 400 IF (AV) (A) Package Axial Values in parentheses are for the products with heatsinks (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave Tstg (°C) VF (V) max IF (A) IR

ry2a

Abstract: LM3661TL-1.40
Contextual Info: 4-2 Fast Recovery Diodes ●Thru-Hole VRM V 200 400 IF (AV) (A) Values in parentheses are for the products with heatsinks (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave Tstg (°C) VF (V) max IF (A) IR IR(H) (µA) (µA)

RU 1

Abstract: RH 1Z RU 4 RF 1A RH 1A Fast Recovery Diodes
Contextual Info: 4-2 Fast Recovery Diodes ●Thru-Hole VRM V 200 400 IF (AV) (A) Values in parentheses are for the products with heatsinks (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave Tstg (°C) VF (V) max IF (A) IR IR(H) (µA) (µA)

Contextual Info: 4-2 Fast Recovery Diodes ●Thru-hole VRM V 100 200 IF (AV) (A) 600 Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave T stg (°C) VF (V) max IF (A) IR IR(H) (µA) (µA) V R=VRM VR=V RM max max Ta (°C) trrq (µs) IF/IRP (mA) trrw (µs) IF/IRP (mA)

2am smd transistor

Abstract: transistor smd 4z HALL SENSOR A 22L 78Mos EL 14v 4c 78 MOS GENERAL SEMICONDUCTOR MARKING mJ SMA ED smd transistor marking 12W TRANSISTOR SMD MARKING CODE 1P TRANSISTOR SMD MARK CODE 7a
Contextual Info: High-side Power Switch with Diagnostic Function SI-5155S External Dimensions unit: mm ● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels

SK 18752

Abstract: 2SC5586 SK 18751 sla6101 sk c4467 STR20012 SLA6102 sk A1186 SK C5071 fn651
Contextual Info: SANKEN 半导体 CONTENTS 目 录 1 集成电路 1-1 1-2 2 1-1-2 开关式稳压集成电路 . 41 1-1-3 多路输出型稳压集成电路 . 93

fmu 22 u

Abstract: AS01 AU01 AU01Z AU02 AU02Z EU01 EU01Z EU02 EU02Z
Contextual Info: 4-2 Fast Recovery Diodes ●Thru-Hole VRM V 200 400 IF (AV) (A) Package Axial Values in parentheses are for the products with heatsinks (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave Tstg (°C) VF (V) max IF (A) IR

Varistor RU

Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

AS01Z

Abstract: AU01Z AU02Z ES01Z EU01Z EU02 EU02Z FMU-12S FMU-22S FMU-32S
Contextual Info: I F AV (A) Part Number IFSM (A) Tj (°C) 50Hz ( ) is with Half-cycle Sinewave Heatsink Single Shot IF / I FP (mA) 2 (µs) IF / I FP (mA) Rth (j- ) Mass Fig. Rth (j-c) (g) No. (°C/W) 15 –40 to +150 2.5 0.25 10 150 100 0.4 10/10 0.18 10/20 20 0.2 54 EU 1Z

EQUIVALENT BYD33D

Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
Contextual Info: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and

2SC5586

Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

SBLF10100CT

Abstract: SBLF1030CT-SBLF10100CT SB320-SB3A0 sbl20100 SMD 1N60 RN1Z 1N4139-1N4146 MTZJ 188 US2A-US2M LR kbpc3510
Contextual Info: CONTENTS TABLE OF CONTENTS ……………………C NUMERICAL INDEX ……………………L SYMBOLS AND TERMS ……………………S HIGH RELIABILITY EXPERIMENT ……………………U trr REVERSE RECOVERY TIME MEASUREMENT CIRCUIT ……………………V

HVR-1X 7 diode

Abstract: FMS-3FU HVR-1X 6 diode MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR FMPG5F rk36 diode rk14 diode HVR-1X 7 diode RU 3AM HVR-1X diode
Contextual Info: DIODES RECTIFIER DIODES Absolute Maximum Ratings Type No. VRM IO IFSM V (A) (A) Elec. Char. at 25°C VF 200 SFPM-54 400 SFPM-62 200 SFPM-64 Abs. Max. Ratings Type No. Max. @ IF(µA) (V) SFPM-52 IR 0.9 30 1.0 1.0 45 0.98 (A) VRM IO IFSM (V) (A) (A) Max. 10

AS01

Abstract: AS01Z AU01Z AU02Z ES01Z EU01Z EU02Z FMU-12S FMU-22S FMU-32S
Contextual Info: Part Number IFSM A Tj (°C) 50Hz ( ) is with Half-cycle Sinewave Heatsink Single Shot t rr 1 (µs) VR = VRM VR = VRM Ta (°C) max max IF / I FP (mA) 2 (µs) IF / I FP (mA) Rth (j- ) Mass Fig. Rth (j-c) (g) No. (°C/W) 15 –40 to +150 2.5 0.25 10 150 100

AS01Z

Abstract: FMU-22S AU01Z AU02Z ES01Z EU01Z EU02 EU02Z FMU-12S FMU-32S
Contextual Info: Part Number IFSM A Tj (°C) 50Hz ( ) is with Half-cycle Sinewave Heatsink Single Shot t rr 1 (µs) VR = VRM VR = VRM Ta (°C) max max IF / I FP (mA) 2 (µs) IF / I FP (mA) Rth (j- ) Mass Fig. Rth (j-c) (g) No. (°C/W) 15 –40 to +150 2.5 0.25 10 150 100