ESC Search Results

TC5316200bP

Abstract: TC5316200BP/BF
Contextual Info: TOSHIBA TC5316200BP/BF SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS MASK ROM D escription The TC5316200BP/BF is a 16,777,216 bit read only memory organized as 1,048,576 words by 16 bits when BY I t is logical high, and organized as 2,097,152 words by 8 bits when BYTE is logical low.

ufn440

Abstract: UFN441
Contextual Info: POWER MOSFET TRANSISTORS UFN440 UFN441 UFN442 UFN443 500 Volt, 0.85 Ohm N-Channel FEA TU RES D ESCRIPTIO N • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low R dscow and a high transconductance.

Contextual Info: 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 7 RELEASED FOR PUBLICATION BY TYCO ELECTRONIC5 CORPORATION. LOC GP ALL RIGHTS RESERVED. REVISIONS D IST 00 LTR D ESCRIPTION EC 0S11 - 0 1 5 1 - 0 4 LED P O S IT IO N A 2 LED P O S IT IO N 3\ 1 2. OF ASSEMBLY 7.87

TC5716200D-150

Abstract: 5716200D
Contextual Info: TOSHIBA TC5716200D-150, -200 SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY D escription T heT C 5716200D is a 16,777,216 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It is

Tyco faston 250 series

Contextual Info: THIS DRAWING IS UNPUBLISH ED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. G DIST R E V IS IO N S 86 LTR L D ESCRIPTION REDRAW N DATE DWN APVD 25AUG04 JR TM D 1 \ A S T E R IS K * FDR PHDS BRONZE V E R S IO N ONLY.

4I601

Contextual Info: 4 T H IS DRAWING IS U N P U B LIS H E D . C COPYRIGHT 2 3 R ELEASED POR PUBLICATIO N BY TYCO ELECTRONICS CORPORATION. - A LL RIGHTS R E S E R V E D . R E V IS IO N ' LOG D IS T AF 5 0 LTR D ESC R IPTIO N REV PER 0 G 6 3 —0 0 4 9 —02 A DWN APVD 0 7 J U N 2 0 0 2 RF

TCK-1000

Abstract: D038 toshiba M7
Contextual Info: TO SH IBA THM Y6480F1 BEG-80 TEN TA TIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388, 6 O8-W O RD B Y 64-BIT SYN CH R O N O U S DRAM M ODULE D ESCRIPTIO N The THMY6480F1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

206460-1

Contextual Info: 4 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAW IN G IS U N P U B L I S H E D COPYRIGHT 19 RE LEA S E D FOR P U B L ICA TI ON BY AMP INCORPORATED. ALL INTERNATIONAL LOC ,19 FT RIGHTS RESERVED. DIST REVISIONS 4 ZONE LTR c D D o cm o CM F o DATE D ESCRIPTION

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONIC5 CORPORATION. ALL RIGHTS RESERVED. LOC D IST AD 00 R E V IS IO N S LTR D ESCRIPTION DATE OWN JDP DD 05JAN05 RELEASED PER EC O SI 2 - 0 5 4 0 - 0 4 APVD A+.008[0.20] .000 B+

FHDC400

Abstract: tc8560
Contextual Info: BOARD PRODUCTS FHDC400 Hard Disk Controller Board 1. G E N E R A L D ESC R IP T IO N FHDC400 is a h ard disk controller board which is used to operate on IBM PC/XT type bus interface level is CMOS and has CMOS type drive interface. 2. FEA T U R ES □ Low power consum ption

PHR0402

Abstract: PH-R-04 PHR 0603 PHR1206 sfernice
Contextual Info: Space Applications Only PHR www.vishay.com ESCC Vishay Sfernice 4001/023 Qualified High Precision (5 ppm, 0.01 %), Thin Film Chip Resistors FEATURES • Load life stability at ± 70 °C for 2000 h: 0.15 % under Pn • Low temperature coefficient down to ± 5 ppm/°C

2SC3686

Contextual Info: Product Specification www.jmnic.com 2SC3686 Silicon NPN Power Transistors ESCRIPTION ・High breakdown voltage ・High reliability adoption of HVP process . ・Fast speed ・Adoption of MBIT process. ・With TO-3PN package APPLICATIONS ・Ultrahigh-definition color display horizontal

2SC3678

Contextual Info: Product Specification www.jmnic.com 2SC3678 Silicon NPN Power Transistors ESCRIPTION ・High Voltage Switching ・With TO-3PN package APPLICATIONS ・ Switching Regulator ・ General Purpose PINNING PIN ESCRIPTION 1 Base 2 Collector;connected to mounting base

TBD CABLE

Abstract: taclane redcom Cisco 3725 lan rj45 color code diagram EIA-470B CA9079 RS-232 trackball db25m pinout DB50 connector
Contextual Info: TDC Theater Deployable Communications Baseline Requirements Document Initial Communications Element - Voice/NIPRNET Module v2 Nov 2003 ESC/NI4T 5 Eglin Street Hanscom AFB, MA 01731 Approved for public release; distribution is unlimited. FA8726-04-R-0002

RS232

Abstract: RS-232 Drivers Receivers SP494 transceiver rs232 driver receiver
Contextual Info: Sipe* ' CofporMcn^ SIGNAL PROCESSING EXCELLENCE For Inform ation on any o f the fo llow in g SIPEX Interface Products, please c ontact the SIPEX Literature Department at 508 667-8700. Model D escription 200 Series P roducts S P200. +5V High-Speed RS232 Transceiver with 0.1 nF Capacitors (5 Drivers, 0 Receivers)

Contextual Info: Package Name T ype Inserted S tand ard Packag e nam e Sym bol D escription T h rou gh H ole Lead 1-direction Z P Zig-Zag IN L IN E PA CK A G E P 2.54mm 100M IL Zig Zag inline T h rou gh H ole Lead 1-direction C P G A PIN GRID A R RA Y C 2.54mm (100M IL)

Contextual Info: SIERRA se m ico n d u cto r DTMF Transceiver SC11280 DTMF Transceiver SC11280 P IN D ESCR IPTIO NS PIN NAME 1 IN+ Non-inverting op-amp input. 2 IN- Inverting op-amp input. 3 4 GS Gain Select. Gives access to output of front end differential amplifier for connection of

cxk59289

Contextual Info: SONY CXK59289P/M 32,768-word x 9-bit High Speed CMOS Static RAM * under - 20/25 developm ent D escription The static 9 -b it, from C X K 5 9 2 8 9 P /M is a high speed CMOS RAM w hich consists o f 32 ,7 6 8 -w o rd x It operates at 2 0 n s / 2 5 n s access time

TC518129AFwl

Contextual Info: TOSHIBA TC518129APL/AFL/AFWL-80LV/lOLV/12LV TC518129AFTL80LV/lOLV/12LV SILICON GATE CM O S 131,072 W ORD x 8 BIT C M O S PSEUDO STATIC RAM D escription The TC5181 29A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV

k613

Abstract: 2SK013 2SK613 2SK613-3 sony IT 243 sony m-100
Contextual Info: Sony. 2SK613 Silicon N-Channel Junction FET U n it: mm P a cka g e O u tlin e D escrip tion M aking the best of Epitaxy and Pattern latest technology, 2 S K 6 13 accom plishes so far unattain­ able levels of performance. Usage with head am plifiers for video cam eras

SDIP-42P-02

Contextual Info: CX20206 S O N Y 8 bit 35 MSPS RGB 3-Channel D/A Converter TTL input D escription CX20206 is an 8 b it high-speed D/A con­ verter fo r video band use. It has an outpuVinput equivalent to 3 channels of R, G and B. It is suitable for use of digital TV, graphic display,

Contextual Info: SÏLONEX s SLED -563L SLED -563F SLED -563E SLED-563L 7 00nm V I S I B L E EMITTER SLED-563F SLED-563E ttrf' 0. 2 1 0 G eneral D escription 0.5 00 The S i l o n e x SLED-563 i s a h i g h o u t p u t G a lliu m A r s e n id e P h o sp h o ru s e m i t t e r w hich

Contextual Info: MGA-S Non resettable fuses www.schurter.com/PG01_2 Surface Mount Fuse for Space Application, ESCC QPL Listed 125 VAC • 125 VDC · Super-Quick-Acting FF escription Applications - ESCC QPL Listed, see www.escies.org - Full data sheet available on request

2SK736

Contextual Info: R á 7 7 525 N E C E C ELECTRONICS INC ELE CT RO NI CS INC _ ~Tfl D T-3^ - 98D 18908 »F§m57S2S □□IflTOfl ñ N-CHANNEL M O S FIELD EFFECT POWER TRANSISTOR 2SK736 D ESCRIPTIO N The 2SK736 is N-Channel MOS Field Effect Power Transistor PA C KAG E D IM EN SIO N S