ESAC25 Search Results

power Diode 200V 10A

Abstract: diode 10a 400v esac25 FAST RECOVERY DIODE 10A 400V
Contextual Info: ESAC25 C,N,D (10A) (200V to 400V / 10A) Outline drawings, mm 10+0.5 4.5±0.2 1.32 1.2 14 -0.5 3.7±0.2 15±0.2 2.7±0.1 Ø3.6±0.2 6.4±0.2 FAST RECOVERY DIODE 0.4 0.8 2.7 2.54 5.08 Features JEDEC EIAJ High voltage by mesa design High reliability TO-220AB

Contextual Info: ESAC25 C,N,D (10A) (200V to 400V / 10A) Outline drawings, mm 10+0.5 4.5±0.2 1.32 1.2 14 -0.5 3.7±0.2 15±0.2 2.7±0.1 Ø3.6±0.2 6.4±0.2 FAST RECOVERY DIODE 0.4 0.8 2.7 2.54 5.08 Features JEDEC EIAJ High voltage by mesa design High reliability TO-220AB

power Diode 200V 10A

Abstract: ESAC25 ESAC25C ESAC25D ESAC25N
Contextual Info: ESAC25 C,N,D (10A) (200V to 400V / 10A) Outline drawings, mm 10+0.5 4.5±0.2 1.32 1.2 14 -0.5 3.7±0.2 15±0.2 2.7±0.1 Ø3.6±0.2 6.4±0.2 FAST RECOVERY DIODE 0.4 0.8 2.7 2.54 5.08 Features JEDEC EIAJ High voltage by mesa design High reliability TO-220AB

4i fut 6

Contextual Info: ESAC2SM C,N,D ( 1 Q A ) MW-M'&ïè : Outline Drawings FA ST RECO VERY DIODE : Features Insutated package by fully m olding. • jty - m mwm&m High voltage by mesa design. Connection Diagram • f t f lU S t t High reliability ESAC25M-DDC Applications °—

a106 diode

Abstract: diode A106
Contextual Info: ESAC25 C, INI, a a s s P ( 1 0 A ) ti*?*-? i t i » - K FAST RECOVERY DIODE 14$^: : Features High voltage by mesa design. 'A f K & f i m m m m High reliability Connection Diagram IffliSs : Applications ESAC25-DDC ° - ► f - ° ® ° — —

Contextual Info: TH09/2479 TH97/2478 www.eicsemi.com ESAC25 C,N,D IATF 0113686 SGS TH07/1033 FAST RECOVERY DIODES TO-220AB PRV : 200 - 400 Volts Io : 10 Amperes 0.154(3.91)DIA. 0.148(3.74) 0.055(1.39) 0.045(1.14) 0.145(3.68) 0.135(3.43) 0.113(2.87) 0.103(2.62) FEATURES :

a106 diode

Abstract: diode A106 ESAC25D A-106 ESAC25 ESAC25-ODC
Contextual Info: ESAC25 C, INI, D (ioa) FAST RECOVERY DIODE Features High voltage by mesa design. • AflMKtt High reliability m w m & m Connection Diagram : Applications ESAC25-ODC °— N — ° ESAC25-DDN © o — H ^ - ► l— ° ® ►! î@> | — °(D High speed power switching.

power Diode 200V 10A

Abstract: ESAC25M esac25
Contextual Info: ESAC25M C,N,D (10A) (200V to 400V / 10A) Outline drawings, mm FAST RECOVERY DIODE 10.5 Max. 4.5Max. Ø3.2+0.2 -0.1 6.0 Min. 3.7 17.0 ±0.3 4.7 2.0 13.0 1.2 0.4 0.8 2.7 2.54 5.08 Features JEDEC EIAJ Insulated package by fully molding High voltage by mesa design

T810

Abstract: s 360 d
Contextual Info: E S A C 2 5 M C , N , D ( io a ) : Outline Drawings -MAX. FAST RECOVERY DIODE j f 1 4 * « : Features JEDEC Insulated package by fully m olding. EIAJ High voltage by mesa design. SC-67 m m & m Connection Diagram 'K f K M t t High reliability ESAC25M -CTX

Contextual Info: ESAC25-04D Diodes High-Speed Center-Tapped Doubler I O Max.(A) Output Current10 V(RRM)(V) Rep.Pk.Rev. Voltage400 t(rr) Max.(s) Rev.Rec. Time400n @I(F) (A) (Test Condition)100m @I(R) (A) (Test Condition)100m V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)2.5

ESAC25

Abstract: ESAC25-02 ESAC25-04
Contextual Info: ESAC25 C,N,D FAST RECOVERY DIODES TO-220AB PRV : 200 - 400 Volts Io : 10 Amperes 0.154(3.91)DIA. 0.148(3.74) 0.055(1.39) 0.045(1.14) 0.145(3.68) 0.135(3.43) 0.113(2.87) 0.103(2.62) FEATURES : * High voltage by mesa design * High High speed switching 0.635(16.13)

a106 diode

Abstract: diode A106 ESAC25 X-1-80 A-106 A106
Contextual Info: ESAC25 C, INI, D (ioa) FAST RECOVERY DIODE Features High voltage by mesa design. • AflMKtt High reliability m w m & m Connection Diagram : Applications ESAC25-ODC °— N — ° ESAC25-DDN © o — H ^ - ► l— ° ® ►! î@> | — °(D High speed power switching.

esac31-02d

Abstract: d5kc40 D8LCA20R
Contextual Info: HIGH•SPEED DIODES Item Number Part Number 10 Max A VRRM (V) t" Max (s) VF IF Max @ Test (V) (A) Package Style Fast-Recovery Rectifiers, Center-Tapped Positive (Co nt' d) 5 10 15 20 SCPAR1F S441DA S447DA SCPAR2F SCPAR4F SCPAR05FF SCPAR10FF SCPAR15FF ESAG73-03C

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

Solitron J775-2

Abstract: BT196 SS14 TOSHIBA 1n5822 TOSHIBA SS550 BT127 SE140 NSR8140S NBS25-400 1N4007 toshiba
Contextual Info: CROSS REFERENCE INDUSTRIAL R u t No. 10D05 iœ i îœ i 10D2 1 302 im 1004 10D4 10D6 10 6 IO » im 11DQ03 11DQ04 11DQ05 11DQ06 15B4B41 15D4B41 15G4B41 15J4B41 1B4B42 im a im o naco in n o 1G4B42 lHi 117 1BB 1J4B42 1*1217 1*12171 1K1217B 1N1218 1K1218A 1*12188

erc24-06

Abstract: ERA21-06 ERC30-02 ERB29-04 ERC48 ERD07-15 ERC24 ERC35-02 ERC38-06 ERD32-01
Contextual Info: COLLMER SEMICONDUCTOR INC 5SE D • HHañTTS Ü0Ü13S3 T ■ very “Quick Reference” Selection Guide 50-100 VOLT Part Number ERA32-01 ERB32-01 ERC30-01 ERD32-01 - 0 3 -O I 200VOLT trr/ns Pkg. Part Number lo A trr/ns Pkg. lo(A) trr/ns Pkg. 1.0 15 1.5 3.0

ERC24-06

Abstract: ERA21-06 ERA18 era-84 ERA15-04 ESAD75-02 ERC24-04
Contextual Info: V -V F U J I M IN I AXIAI. DIODI? S E R IE S T PLAN General purpose D iode T Y P lì -~ FRD FRD SOD Low loss FRD FRD FRD ZENER n FRA15-01 ERA15-02 ERA15-04 MM 15-06 ERA15-08 ERA15-10 BRA-18-02 ERA48-04 100 V 200 200 400 EIÏA22-02 ERA22-04 ERA22-0G ERA22-08

Contextual Info: Fast Recovery Diodes Dual package Ratings and characteristics Type Maximum rating Vrrm lo * 1 Ifsm Thermal rating Tj and Tag Amps. °C Dimensions Characteristics Ta=25°C V fm Irrm *2 Max, Volts Max. mA trr *3 /us Rthj-c °C/W Grams Fig. No. Mass Volts Amps.

ESAD25-02C

Contextual Info: /TÉ# < H fü il —K / Rectifier Diodes K Fast Recovery Diodes FRD' 2 in one-package Wf £ Device typs SM3 to n s , « s im m I V » c Thermaî rating Charactertsiica T a - 2 S t V fm tefiM *3 trr IfBW*2 Tj and Tstg Amos t ' M ax Volts Max pA ac. rating

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

ERD29-08

Abstract: esc023 ERA22-02 ERA22-04 ERA22-06 ERA22-08 ERA22-10 ERA34-10 ERD37-08 ERB43-02
Contextual Info: 整流ダイオード / Rectifier Diodes • 高速整流ダイオード Fast Recovery Diodes（FRD） シングル リードタイプ 1 in one-package, lead type 形 式 Device type SMD 絶対最大定格 対応品 Maximum rating VRRM IF AV ＊1 Volts Amps.

ERG81-004

Abstract: ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 ERB81-004 era-84 YG811S0 YG802C06
Contextual Info: Schottky-barrier diodes Connection Package V rrm Volts 40 45 60 90 Lead Single SC If s m (Amps.) 0.6 25 1.0 50 1.0 50 1.0 30 1.0 30 1.0 30 2.0 80 2.0 100 2.0 60 2.0 60 3.0 120 3.0 80 3.0 80 1.0 40 1.0 30 1.0 30 K-pack 5.0 80 TO-22QAB 5.0 120 5.0 10 TO-220F17 *

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

YG902C2

Abstract: TO-220F15 ESAB33-02CS ESAB34M-02C ESAB92-02 ESAB92M-02 ESAB92M-03 KP923C2 KS923C2 TP901C2
Contextual Info: Fast Recovery Diodes Dual package Ratings and characteristics Type M aximum rating rrm io -M-t Volts Am ps. V Ifsm Therm al rating Tj and Tstg Am ps. “C 200 5 Tc=103°C 5 (Tc=125°C) 50 50 TP901C2 200 5 (Tc=125°C) TP901C3 ESAB92-02 ESAB92M-02 300 5 (Tc=125°C)