EQUIVALENT TRANSISTOR UM 66 Search Results

Contextual Info: 5SC D m 023SbQS Q004312 ì IS I E G NPN Silicon Planar Transistor BCY6 6 7 -1 7 -2 .4 SIEMENS AKTIEN6ESELLSCHAF BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for

Mextram

Abstract: GP 004 DIODE 101C 220H 320H PNP TRANSISTor experiments transistor XM
Contextual Info: Paper 9.3 Experience with the New Com pact M E X T R A M M odel for Bipolar Transistors H.C. de GraafF, W.J. Kloosterman, J.A.M. Geelen and M.C.A.M. Koolen Philips Research Laboratories P.O. Box 80000 5600 JA Eindhoven, The Netherlands A bstract Here Qte and Qtc are the emitter and collector de­

LM391 equivalent

Abstract: lm391 IC LM391 JE182 JE722 OF LM391 550JA
Contextual Info: LM391 & National Semiconductor LM391 Audio Power Driver General Description Features The LM391 audio pow er driver is designed to drive external pow er tra n sisto rs in 10 to 100 w att pow er am plifier designs. High pow er supply voltage operation and true high fidelity

Contextual Info: M ay 1998 fo ri . ML4850 Low Current Single Cell Boost Regulator with Detect GENERAL DESCRIPTION FEATURES The M L4850 is a low pow er boost regulator designed for low voltage DC to DC conversion in single cell battery powered systems. The m axim um sw itchin g frequency can

Contextual Info: A pril 1998 PRELIMINARY MgL Micro Linear ML4769 2 Cell, Adjustable Output Boost Regulator with Load Disconnect GENERAL DESCRIPTION FEATURES The M L4769 is a continuous conduction boost regulator designed fo r DC to DC conversion in m ultiple cell battery pow er systems. C ontinuous conduction allows the

tag 8833

Abstract: IC LM 393 N LM 352 voltage regulator Ic 13,56 MHz RFID antenna receiver of rfid tag Bi-phase-L Coding IC LM 393 N pin details 125 kHz RFID tag antenna power supply of uv curing lamp RF inductor 13.56 MHz
Contextual Info: MCRF355 13.56 MHz Passive RFID Device with Anti-Collision Feature Features • • • • • • • • • • • • • Package Type Carrier frequency: 13.56 MHz Data modulation frequency: 70 kHz Manchester coding protocol 154 bits of user memory On-board 100 ms SLEEP timer

TDA1054

Abstract: TDA 1054 M tda 486 ic data TAPE RECORDER bias ac din hfe nv riaa preamplifier circuit diagram DUAL PRE-AMPLIFIER FOR TAPE RECORDER DUAL PREAMPLIFIER WITH ALC XR88C681P/28-F ALC Automatic Level Control
Contextual Info: TDA1054 LINEAR INTEGRATED CIRCUIT PRELIMINARY DATA PREAMPLIFIER FOR CASSETTE RECORDERS WITH ALC • • • • • • E X C E LLE N T V E R S A T IL IT Y in USE V s fro m 4 to 20V HIG H OPEN LOOP G AIN LOW D ISTO R TIO N LOW NOISE LAR G E A U T O M A T IC L E V E L C O N TR O L RANGE

Manchester c source code using PIC

Abstract: rfid attendance system ask fsk psk CB10 MCRF200 MCRF355 MCRF450 RFID FSK RFID reader SOURCE CODE microchip
Contextual Info: Not recommended for new designs. Please use MCRF355 or MCRF450. MCRF200 125 kHz microID Passive RFID Device Features Package Type • Factory programming and memory serialization SQTPSM • One-time contactless programmable (developer kit only) • Read-only data transmission after programming

Contextual Info: A pril 1999 PRELIMINARY MgL Micro Linear ML4869 Medium Current Boost Regulator with Load Disconnect GENERAL DESCRIPTION FEATURES The M L4869 is a co ntin uo us co nd uctio n boost regulator designed fo r DC to DC conversion in m u ltip le cell battery pow er systems. C ontinuous conduction a llo w s the

OF IC 7909

Abstract: xr 2230 UHF transistor GHz marking 4S SOT343 4 pin dual-emitter BFG25AW marking code C1E marking c1e transistor BFG25W BFG25AWX
Contextual Info: Philips Semiconductors Product specification BFG25AW BFG25AW/X; BFG25AW/XR NPN 5 GHz wideband transistor MARKING FEATURES • Low current consumption 100 ^iA to 1 mA TYPE NUMBER • Low noise figure • Gold metallization ensures excellent reliability. CODE

bcy59 equivalent

Abstract: BU108 BUY69 BC326 F011 transistor BSCECC F011 bcy78 equivalent bcy79 equivalent ica 350
Contextual Info: BS9000 NPN Power Transistors TO-3 Package B S Type Num ber VCBO Com m ercial Equivalent Case Outlines A bsolu te M axim um Ratings IC A VEBO PTOT 8 50 5 5 10 6 7 50 70 B S 93 63 B S 93 65 B S 93 63 F014 F191 F016 B D 2 53 , A, B C BU105 BU108 3 5 0 to 900

Contextual Info: T • bb53131 □ D3333tl 330 HIAPX N APIER PHILIPS/DISCRETE b'lE D Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The

Contextual Info: RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Semiconductor April 1999 Data Sheet 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs File Num ber 3948.4 Features • 0.30A, 60V These are intelligent monolithic power circuits which

T2140

Abstract: chip die hp transistor 0099E planar*el BF 212 transistor
Contextual Info: HEW LETT-PACKARD/ CflPNTS b lE ]> • 4447584 Whp% H EW LETT mittm PA CK A RD 402 ■HPA Chip Outline1 Features • • • • o o m ? 1! ! AT-21400 20 GHz NPN Silicon Bipolar Oscillator Transistor Fundamental Oscillation to > 20 GHz Low Phase Noise Compared to GaAs FETs

RF2155

Contextual Info: RFEM RF2155 M ICRO-DEVICES 3 V PR O G R A M M A B LE G A IN POW ER A M P L IF IE R T y p ic a l A p p lic a t io n s • Analog Communication Systems • Driver Stage for Higher Power Applications • 900M Hz Spread Spectrum Systems • 3V Applications 2 POWER AMPLIFIERS

t 3866 transistor equivalent transistor

Abstract: ML4868E lt 7245
Contextual Info: December 1994 PRELIMINARY % ,M ic r o L in e a r ML4868 High Frequency, Low Voltage Boost Regulator GENERAL DESCRIPTION FEATURES The ML4868 is a high frequency boost regulator designed for DC to DC conversion in 2 to 3 cell battery powered systems. The maximum switching frequency can exceed

transistor CD 910

Abstract: BFT11 RF2155 BATWING sop-16
Contextual Info: RF2155 MICRO »DEVICES 3V PROGRAMMABLE GAIN POWER AMPLIFIER T yp ical A p plicatio ns • Analog Communication Systems Driver Stage for Higher Power Applications • 900MHz Spread Spectrum Systems 3V Applications • 400MHz Industrial Radios Product Description

bc109 equivalent

Abstract: BC107 equivalent transistors EQUIVALENT TRANSISTOR bc108 bc108 equivalent BC177 equivalent BC107 equivalent BC178 equivalent equivalent of BC178 2n3963 equivalent transistor equivalent bc108
Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. D evice Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra

BFG590W

Abstract: 3094 npn
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG590W BFG590W/X; BFG590W/XR NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors August 1995 Philips Semiconductors Product specification BFG590W BFG590W/X; BFG590W/XR

transistor 667

Abstract: BFR93A Philips FA 261 transistor bf 422 NPN BFR91A BFT93 BF 194 transistor transistor BF 257 transistor bf 184 BF 184 transistor
Contextual Info: WÊt 7 1 1 G û 2 t Philips Semiconductors OOb^mfl 2T2 • R H I N ^ P ro d u c ^ p e c ific a tio n NPN 6 GHz wideband transistor S= PINNING FEATURES DESCRIPTION PIN • High power gain • Low noise figure • Very low intermodulation distortion 1 base 2

STR M 6559

Abstract: 9632 transistor str 6559 4609 IC equivalent BFG67W STR 5564
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors August 1995 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR

Contextual Info: M ay 1998 MgL Micro Linear ML4865 High Voltage High Current Boost Regulator GENERAL DESCRIPTION FEATURES The M L4865 is a high voltage, continuous conduction boost regulator designed for DC to DC conversion in m ultiple cell battery powered system s. C ontinuous

transistor bt 808

Abstract: transistor 1548 b
Contextual Info: b b S a ^ l 00250bb 3b0 H A P X Philips Semiconductors N AMER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES Product specification b?E T> BFQ67 PINNING • High power gain PIN • Low noise figure 1 base DESCRIPTION • High transition frequency 2

d2494

Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
Contextual Info: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in