MEXTRAM Search Results

TRANSISTOR SUBSTITUTION 1993

Abstract: volterra VOLTERRA VT c1e2 hp8566A BFR520 CT-20 ED-11 TRANSISTOR SUBSTITUTION BFR520 transistor
Contextual Info: IEEE JOURNAL ON SOLID-STATE CIRCUITS, VOL. 31, NO. 1, JANUARY 1996 114 Advanced Modeling of Distortion Effects in Bipolar Transistors Using the Mextram Model Leo C. N. de Vreede, Henk G. de Graaff, Koen M outhaan, Student M em ber, IEEE, M arinus de Kok, Joseph L. Tauritz, M ember, IEEE, and Roel G. F. Baets, M ember, IE E E

volterra

Abstract: VOLTERRA VT b2c2 poon Modelling VOLTERRA -VSC1294-LF.D.G.B BFR520 CT-20 BFR520 transistor quasi
Contextual Info: 1994 Bipolar/BiCMOS Circuits & Technology Meeting 3.2 Advanced modelling of distortion effects in bipolar transistors using the Mextram model L.C.N. de Vreede, H.C. de Graaff, K. Mouthaan, M. de Kok, J.L. Tauritz and R.G.F. Baets Delft University of Technology, Dept, of Electrical Engineering

Practical statistical simulation for efficient circuit design

Abstract: kopin
Contextual Info: P1: SFK Trim: 247mm x 174mm CUUK1544-09 9 CUUK1544/Fager Top: 12.653mm Design: Engg C Gutter: 16.871mm 978 0 521 76210 6 June 14, 2011 Practical statistical simulation for efficient circuit design Pete Zampardi, Yingying Yang, Juntao Hu, Bin Li, Mats Fredriksson,

AN11436

Contextual Info: 62 7  % BFU530X NPN wideband silicon RF transistor Rev. 1 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU530X is part of the BFU5 family of transistors, suitable for small signal to medium

Contextual Info: 62 7  % BFU520 NPN wideband silicon RF transistor Rev. 2 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU520 is part of the BFU5 family of transistors, suitable for small signal to medium

Contextual Info: AN11426 BFU550W ISM 866 MHz LNA design Rev. 1 — 24 January 2014 Application note Document information Info Content Keywords BFU520, BFU530, BFU550 series, ISM-band, 433MHz 866MHz Abstract This document describes an ISM Frequency LNA design on BFU5xxW Starter kit

lm 7803

Abstract: "BJT Transistors" TRANSISTOR as BC 158 BJT Transistors bipolar BC transistor 60GHz transistor AVALANCHE TRANSISTOR 60Ghz TRANSISTOR 30GHZ 30GHZ
Contextual Info: IEEE BCTM 10.1 A Comprehensive Bipolar Avalanche Multiplication Compact Model for Circuit Simulation WJ. Kloosterman, J.C.J. Paasschens, and R.J. Havens Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands tel.: +31 40 2744093, email: Willy.Kloosterman@philips.com

BFU590G

Contextual Info: 62 7  BFU590G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium

Contextual Info: BFU520Y Dual NPN wideband silicon RF transistor Rev. 1 — 20 February 2014 Product data sheet 1. Product profile 1.1 General description Dual NPN silicon RF transistor for high speed, low noise applications in a plastic, 6-pin SOT363 package. The BFU520Y is part of the BFU5 family of transistors, suitable for small signal to medium

UPC8236

Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Contextual Info: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

TRANSISTOR SUBSTITUTION

Abstract: ED42 Scans-008492 Mextram
Contextual Info: Efficient Param eter Extraction for the M EX TR A M M odel W .J. Kloosterman, J.A.M. Geelen and D.B.M. Klaassen Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands tel.: +31 40 744093, email: kloosteb@prl.philips.nl A b stract

Mextram

Abstract: GP 004 DIODE 101C 220H 320H PNP TRANSISTor experiments transistor XM
Contextual Info: Paper 9.3 Experience with the New Com pact M E X T R A M M odel for Bipolar Transistors H.C. de GraafF, W.J. Kloosterman, J.A.M. Geelen and M.C.A.M. Koolen Philips Research Laboratories P.O. Box 80000 5600 JA Eindhoven, The Netherlands A bstract Here Qte and Qtc are the emitter and collector de­

Contextual Info: BFU520XR NPN wideband silicon RF transistor Rev. 1 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package. The BFU520XR is part of the BFU5 family of transistors, suitable for small signal to

BFU590G

Contextual Info: 62 7  BFU580G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU580G is part of the BFU5 family of transistors, suitable for small signal to medium

Contextual Info: AN11425 BFU550W ISM 433 MHz LNA design Rev. 1 — 24 January 2014 Application note Document information Info Content Keywords BFU520, BFU530, BFU550 series, ISM-band, 433MHz 866MHz Abstract This document describes an ISM Frequency LNA design on BFU5xxW Starter kit

Contextual Info: 62 7  BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium

BGA7130

Abstract: LTE repeater
Contextual Info: ON 8 BGA7130 HV S 400 MHz to 2700 MHz 1 W high linearity silicon amplifier Rev. 1 — 9 October 2012 Product data sheet 1. General description The MMIC is a single-stage amplifier, offered in a leadless surface-mount package. It delivers 30 dBm output power at 1 dB gain compression and a superior performance up to

BA 7891 NG

Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
Contextual Info: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进

Contextual Info: 62 7  % BFU520 NPN wideband silicon RF transistor Rev. 1 — 20 February 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.

Contextual Info: 62 7  % BFU520X NPN wideband silicon RF transistor Rev. 2 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU520X is part of the BFU5 family of transistors, suitable for small signal to medium

Contextual Info: 62 7  % BFU550X NPN wideband silicon RF transistor Rev. 1 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU550X is part of the BFU5 family of transistors, suitable for small signal to medium

Contextual Info: 62 7  BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium

Contextual Info: AN11381 BFU550A ISM 433 MHz LNA design Rev. 1 — 21 January 2014 Application note Document information Info Content Keywords BFU520, BFU530, BFU550 series, ISM-band, 433MHz 866MHz Abstract This document describes an ISM Frequency LNA design on BFU5xxA Starter kit

Contextual Info: 21  BGA6130 +9 6 400 MHz to 2700 MHz 1 W high efficiency silicon amplifier Rev. 2 — 12 February 2014 Product data sheet 1. General description The MMIC is a one-stage amplifier, offered in a low-cost leadless surface-mount package. At 3.6 V it delivers 29.5 dBm output power at 3 dB gain compression with