EQUIVALENT TRANSISTOR RF Search Results

NTE359

Abstract: 8-32N
Contextual Info: NTE359 Silicon NPN Transistor RF & Microwave Transistor Description: RF Power Transistor 20W − 175 MHz Features: Specified 28 Volt, 175MHz Characteristics Output Power = 20 Watts Minimum Gain = 8.2dB Efficiency = 60% Characterized from 125 to 175MHz Includes Series Equivalent Impedances

Contextual Info: T em ic Semiconductors Symbols and Terminology AQL Acceptable Quality Level see chapter “Quality Data” B. b Base, base terminal C, c Collector, collector terminal Capacitances The transistor equivalent circuit (see chapter “Transistor Equivalent Circuit”) shows the different capacitances in

Contextual Info: PNP SILICON TRANSISTOR BN1L4M DESCRIPTION The BN1 L4M is designed for use in medium speed switching PACKAGE DIMENSIONS circuit. FEATURE in millimeters inches 4 .2 MAX. (0.165 MAX.) Bias resistors built-in type PNP transistor equivalent circuit. 2 .2 MAX.

2sc2240 equivalent

Abstract: 2sc1815 equivalent 2sc3112 equivalent 2sa1015 equivalent 2sc2120 equivalent 2sc2458 equivalent 2Sc1959 equivalent 2SC1627 equivalent 2sc2878 equivalent 2SA1091 equivalent
Contextual Info: Surface Mount Devices 1 Super-Mini Transistors (SOT-23MOD.) Electrical Characteristics (Ta=25’ C) Application Type No. le (mA) PC (mW) TJ rc ) Mark Complementary Remarks (TO-92 Mini-transistor) Equivalent TO-92 Type No. 2SA1162 Low-frequency oompllflcation

2sk112

Contextual Info: 9-97 E4 IFN112 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • LOW NOISE, HIGH GAIN • Equivalent to Japanese 2SK112 Absolute maximum ratings at TA= 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 50 V Continuous Forward Gate Current 10 mA

Contextual Info: Ordering number : ENA1126A FH105A RF Transistor 10V, 30mA, fT=8GHz, NPN Dual MCP6 http://onsemi.com Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly The FH105A is formed with two chips, being equivalent to the 2SC5245A, placed in one package

STA455C

Abstract: STA405A SMA6012 SLA6022 SLA*6022 SMA4031 sla1008 sta421a SLA4031 SLA6030
Contextual Info: ANKEN DISCRETES TRANSISTOR ARRAYS Type No. VcEO lc lcp lif¡ Equivalent (V) (A) min Diagram Circuit VCEO IcOc3) N (V) (A) min Type No. STA301A 60+10 4(8) 1000 1 SMA4020 -60 -4 2000 30 STA302A -50 -4 (-8) 1000 2 SMA4021 -60 -3(-6) 2000 31 STA303A 100 4(8)

equivalent 2SC2655

Abstract: 2SA949 equivalent toshiba audio power amplifier 2Sc2229 equivalent 2SC2873 equivalent 2SA1213 equivalent 2SC2655/Y/c2655 equivalent 2SC2655 equivalent transistor marking M sot89 toshiba transistor marking SA
Contextual Info: TOSHIBA {DI SC RE TE /O PT O} Sb D eT | TCnTESO 0Q07104 0 / — 9097250 TOSHIBA — ^ D I S C R E T E / O P T O _ ~ /' 5 61 07 I 0 4 "" " D 2 f - ¿/ Chip Device For Hybrid IC (2) Power Mini Transistor (Equivalent to SOT-89) Type Application Electrical Characteristic (Ta = 25°C)

motorola rf Power Transistor

Abstract: transistor equivalent table chart 2N6256 AN282A 2N3948 transistor equivalent table AN548A 2N5849 motorola RF Transistor Selection 2N5849
Contextual Info: Order this document by AN282A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN282A SYSTEMIZING RF POWER AMPLIFIER DESIGN Prepared by: Roy Hejhall INTRODUCTION Two of the most popular RF small signal design techniques are: 1. the use of two port parameters, and

Contextual Info: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —

MRF392

Abstract: TRANSISTOR Z4 3142 equivalent J044 Z1 Transistor 6 pin transistor Z6 Z6 82 mini cap 744A-01 LX125
Contextual Info: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —

vhf linear amplifier mrf245

Abstract: amplifier mrf245 mrf247 OMRON lzn2 MRF240 2N6084 equivalent MRF245 DATA SPEC NF2-12 LZN2-UA-DC12 mrf245
Contextual Info: Order this document by AN791/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN791 A SIMPLIFIED APPROACH TO VHF POWER AMPLIFIER DESIGN Prepared by: Helge O. Granberg RF Circuits Engineering This note discusses the design of 35-W and 75-W VHF linear amplifiers. The construction technique

MFRC52x

Abstract: AN166510 - Amplifier antenna matching calculation RFSim99 antenna matching 13,56 mhz calculation AN10893 13.56MHZ RFID nxp nxp proximity antenna design antenna matching calculation NXP antenna design guide 13.56 power amplifier nxp
Contextual Info: AN10893 RF Amplifier for NXP contactless MFRC52x Rev. 1.0 — 4 November 2009 182010 Application note PUBLIC Document information Info Content Keywords RFID, Antenna Design, RF Amplifier, Antenna Matching, contactless reader Abstract This application notes provides guidance on antenna and RF amplifier

transistor s parameters noise

Abstract: BF 145 transistor
Contextual Info: SIEGET
25 BFP 450 NPN Silicon RF Transistor 3
For medium power amplifiers 4
Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2
Transition frequency f T = 24 GHz
Gold metallization for high reliability

acs sot-343

Abstract: spice germanium diode RF POWER TRANSISTOR NPN 3GHz marking BFP 620 sot-343 VPS0560
Contextual Info: BFP 620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz

Transistor Equivalent list

Abstract: transistor A5G "RF MOSFET" DU2860U 300 Amp mosfet resistor 300 ohms equivalent transistor rf mosfet 800 v DU2860
Contextual Info: s2zz-f rgy= e -A5g =r- -=- an AMP company RF MOSFET 2 - 175 MHz Power Transistor, 6OW, 28V DU2860U v2.00 Features A 4Gl. N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices

20 amp MOSFET transistor

Abstract: MOSFET POWER TRANSISTOR DU2880V
Contextual Info: an AMP company RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz DU2880V Features . N-Channel Enhancement Mode Device l DMOS Structure l Lower Capacitances for Broadband Operation l High Saturated Output Power l Lower Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C

HALL EFFECT 21E

Abstract: thyristor aeg transistor SMD 12E transistor Common Base configuration TRANSISTOR SMD MARKING CODE 2s aeg thyristor NPN transistor bc 148 lg smd transistor diode marking code YF MARKING SMD TRANSISTOR GG
Contextual Info: RF Transistors Data Book 1997 Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. For example: B Material

Siemens DIODE E 1240

Abstract: AMS 3630 Code "A06" RF Semiconductor SIEMENS BFP420 Transistor MJE 540 HA 12432 SOT343-3 BFP420 application notes BFP420 A06 ff 0401 transistor
Contextual Info: S IE M E N S SIEGET 25 BFP420 NPN Silicon RF Transistor • • • • • • For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.05 dB at 1.8 GHz Outstanding Gms = 20 dB at 1.8 GHz Transition Frequency 1j = 25 GHz Gold metalization for high reliability

SIEMENS BFP405

Abstract: marking A06 transistor A06
Contextual Info: SIEMENS SIEGET 25 BFP405 NPN Silicon RF Transistor • • • • • • For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 22 dB at 1.8 GHz Transition Frequency fT = 25 GHz Gold metalization for high reliability

Transistor Equivalent list

Abstract: SEMCO 20 amp MOSFET transistor DU1260T
Contextual Info: .-I -=c z an AMP company = RF MOSFET Power Transistor, 6OW, 12V 2 - 175 MHz DU1260T v2.00 Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices

transistor power rating 5w

Abstract: DU2805S transistor Pout 5W B62152A
Contextual Info: e ec=.- = :-=s = = = -r-= =z r = an AMP company RF MOSFET 2 - 175 MHz Power Transistor, 5W, 28V DU2805S v2.00 Features l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Koise Figure Than Bipolar Devices

Transistor Equivalent list

Abstract: resistor 300 ohms "RF MOSFET" Rf power transistor mosfet DU2880U mosfet 400 mhz equivalent transistor rf CAPACITOR z j k voltage MOSFET POWER TRANSISTOR
Contextual Info: RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz DU2880U Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C

Marking ANs

Abstract: Transistor C 5198 b 514 transistor BFP450
Contextual Info: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P. 1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency fT = 24 GHz • Gold metalization for high reliability