EQUIVALENT IR 2010 Search Results

Contextual Info: CUS520 Schottky Barrier Diode Silicon Epitaxial CUS520 1. Applications • High-Speed Switching 2. Features 1 Low reverse current: IR(2) = 5 µA (max) (2) General-purpose USC package, equivalent to SOD-323 and SC-76 packages. 3. Packaging and Internal Circuit

Contextual Info: CES520 Schottky Barrier Diode Silicon Epitaxial CES520 1. Applications • High-Speed Switching 2. Features 1 Low reverse current: IR(2) = 5 µA (max) (2) Small and compact ESC package, equivalent to SOD-523 and SC-79 packages. 3. Packaging and Internal Circuit

FGE0500

Abstract: FGE2000 FGE2500 F100K ECL 300 series and design guide Fairchild 100K series ECL Fairchild ZN 1010 1240 picosecond la 4440 LA 4440 circuit diagram PS-1050
Contextual Info: FGE Series ECL Gate Arrays F A IR C H IL D A Schlumberc J/n A 005596 January 1986 n Description 0r>y ^ Gate Array Division FiC The FGE Series of ECL gate arrays are the fastest silicon gate arrays commercially available. These advanced ECL gate arrays, ranging from 100 to 2840 equivalent gates, offer

RB050M-30

Abstract: RSX201VA-30 RB080L-30 RSBC6.8CS RSAC6.8CS RB055L-30 RB050M RSAC16CS EDZ TE61 27B ROHM tfz diodes
Contextual Info: 2010 Product Catalog Discrete Semiconductors Schottky Barrier Diodes Zener Diodes Schottky Barrier Diodes Original fine process technology and a unique device structure have enabled ROHM to develop Schottky barrier diodes that feature simultaneously low VF and IR - an unprecedented accomplishment

Contextual Info: May 20th, 2010 Automotive Grade AUIRS4428S DUAL LOW SIDE DRIVER Product Summary Features • • • • • • Gate drive supply range from 6 V to 20 V CMOS Schmitt-triggered inputs Matched propagation delay for both channels OutputA out of phase with InputA and

AEC-Q100

Abstract: AEC-Q100-002 marking h3a AUIRS4426S igbt reference schematics application of dc-dc converter AUIRS4428S
Contextual Info: May 20th, 2010 Automotive Grade AUIRS4428S DUAL LOW SIDE DRIVER Features • • • • • • Product Summary Gate drive supply range from 6 V to 20 V CMOS Schmitt-triggered inputs Matched propagation delay for both channels OutputA out of phase with InputA and

AUIRS2181S

Abstract: 14SOICN AUIRS2183 AUIRS21814 AUIRS2181STR AUIRS2181 "Common rail" 3A diode International Rectifier AEC-Q100 1000v 3a diode
Contextual Info: July 27th, 2010 Automotive Grade AUIRS2181 4 S HIGH- AND LOW-SIDE DRIVER Features • • • • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage, dV/dt immune

AUIRS2183

Contextual Info: July 28th, 2010 Automotive Grade AUIRS21811S HIGH AND LOW SIDE DRIVER Product Summary Features • • • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage, dV/dt

AUIRS2183

Contextual Info: July 27th, 2010 Automotive Grade AUIRS2181 4 S HIGH- AND LOW-SIDE DRIVER Features • • • • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage, dV/dt immune

AUIRS21811S

Abstract: AUIRS21811 AEC-Q100 AEC-Q100-002 CIC310 AUIRS21811STR
Contextual Info: July 28th, 2010 Automotive Grade AUIRS21811S HIGH AND LOW SIDE DRIVER Features • • • • • • • • • • • Product Summary Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage, dV/dt

xgold

Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ES D3 V3U 4 U L C Ultra Low Capacitance ESD Array ESD3V3U4ULC Data Sheet Revision 0.9, 2010-10-14 Preliminary Industrial and Multi-Market Edition 2010-10-14 Published by Infineon Technologies AG 81726 Munich, Germany

transistor 13001 s 6b

Abstract: 13001 S 6B TRANSISTOR S 6B 13001 transistor AUIRS21271 st 13001 TRANSISTOR AS2127 13001 TRANSISTOR free AUIRS21271S N CHANNEL MOSFET 10A 1000V transistor 13001 s 6a
Contextual Info: October 26th, 2010 Automotive Grade AUIRS212 7,71,8,81 S Over Current Protected Single Channel Driver Features • • • • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage – dV/dt immune

33178

Abstract: 1N5550 1N5550US 1N5551 1N5552 1N5553 1N5554 1N5554US 1N5554 JANTXV equivalent 1N5554 JANTXV
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 10 May 2010. MIL-PRF-19500/420L W/Amendment 1 10 February 2010 SUPERSEDING MIL-PRF-19500/420L 27 June 2008 PERFORMANCE SPECIFICATION SHEET

Contextual Info: November 2nd, 2010 Automotive Grade AUIRS2004S HALF-BRIDGE DRIVER IC Features • • • • • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +200 V Tolerant to negative transient voltage – dV/dt immune

AUIRS2004

Abstract: mt 13001
Contextual Info: November 2nd, 2010 Automotive Grade AUIRS2004S HALF-BRIDGE DRIVER IC Features • • • • • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +200 V Tolerant to negative transient voltage – dV/dt immune

AUIRS2183

Abstract: AUIRS2181S class d circuit diagram AUIRS2181STR "Common rail" AEC-Q100 common rail AUIRS2181 14SOICN
Contextual Info: February 24th, 2010 Automotive Grade AUIRS2181 4 S HIGH- AND LOW-SIDE DRIVER Features • • • • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage, dV/dt immune

AEC-Q100-011

Abstract: marking h3a AEC-Q100 AEC-Q100-002 AUIRS4427S IR circuit diagram 3 phase rectifier circuit diagram igbt AEC-Q100-003 4015 IC circuit diagram
Contextual Info: January 20th, 2010 Automotive Grade AUIRS4427S DUAL LOW SIDE DRIVER Features • • • • • • • • Gate drive supply range from 6 V to 20 V CMOS Schmitt-triggered inputs 3.3V and 5V logic compatible Two independent gate drivers Matched propagation delay for both channels

AEC-Q100

Abstract: AEC-Q100-004 AEC-Q100-002 AUIRS4427S marking h3a AUIRS4427
Contextual Info: March 15th, 2010 Automotive Grade AUIRS4427S DUAL LOW SIDE DRIVER Features • • • • • • • • Gate drive supply range from 6 V to 20 V CMOS Schmitt-triggered inputs 3.3V and 5V logic compatible Two independent gate drivers Matched propagation delay for both channels

LL101B

Abstract: LL101C SD101B SD101C SMD Schottky Dioden
Contextual Info: SD101B . SD101C SD101B . SD101C Schottky Barrier Diodes Schottky-Barrier Dioden Version 2010-12-06 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 40.50 V Glass case Glasgehäuse 3.9 62.5 Ø 1.9 15 mA DO-35

IC ax 2008 circuit diagram

Abstract: IC AX 2008 CIRCUIT DIAGRAM WITH PIN CONFIGURATION AS2118 IC ax 2008 AUIRS2118 AUIRS2117S AS2117 free circuit diagram for 13001 AUIRS2117 pin configuration and assignments of bridge rectifier
Contextual Info: February 2nd, 2010 Automotive Grade AUIRS211 7,8 S SINGLE CHANNEL DRIVER Features • • • • • • • • • Product Summary Floating channel designed for bootstrap operation Topology Fully operational to +600 V Tolerant to negative transient voltage – dV/dt immune VOFFSET

Contextual Info: February 2nd, 2010 Automotive Grade AUIRS211 7,8 S SINGLE CHANNEL DRIVER Features • • • • • • • • • Product Summary Floating channel designed for bootstrap operation Topology Fully operational to +600 V Tolerant to negative transient voltage – dV/dt immune VOFFSET

13001 s 6B

Abstract: AUIRS2181 AUIRS2184 AUIRS21844 AEC-Q100 zener alternator rectifier AUIRS21844STR
Contextual Info: February 24th, 2010 Automotive Grade AUIRS2184 4 S HALF-BRIDGE DRIVER Features • • • • • • • • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to + 600 V Tolerant to negative transient voltage, dV/dt

rf1501

Abstract: RFU20TM5 RFUS20 RF2001 RF1501TF3S RF1501NS3S rfu20 RFU20TM5S RF05VA2S 1SR154
Contextual Info: 2010 Product Catalog Discrete Semiconductors Fast Recovery Diodes Rectifier Diodes Fast Recovery Diodes ROHM’s RF series utilizes a unique process for the highest recovery characteristics in the industry. The novel design, which emphasizes low loss and high reliability, has been well received in the market, resulting in the number one

Contextual Info: SD101B . SD101C SD101B . SD101C Schottky Barrier Diodes Schottky-Barrier Dioden Version 2010-12-06 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Ø 1.9 40.50 V Glass case Glasgehäuse 3.9 62.5 15 mA DO-35