EQUIVALENT FOR 1N5819 Search Results

MUR1560 equivalent

Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
Contextual Info: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON

1N5819 SOD-123

Abstract: smd package 1N5819 1n5817 SOD-123 sod87 package 1N5819 smd diode SOD 87 Package 1N5819 SOD123 1N5818 smd 1n5819 smd 1N5819 SMA
Contextual Info: New Product Announcement April 2001 Compact, High-efficiency SOD-123: 1N5819HW! Uses 35-40% Less Board Space Than Other 1 Amp SMD’s E D SOD-123 A B G H C J Dim Min Max A 3.55 3.85 B 2.55 2.85 C 1.40 1.70 D  1.35 E 0.55 Typical G 0.25  H 0.15 Typical

Contextual Info: 1N5819-1 and 1N5819UR-1 Standard HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 193, REV. C.2 AVAILABLE AS 1N5819-1, 1N5819UR-1 JAN EQUIVALENT: SJ5819-1/SJ5819UR-1* SV5819-1/SV5819UR-1* SX5819-1/SX5819UR-1*

smd package 1N5819

Abstract: 1N5819 smd diode 1N5817 smd 1n5819 smd 1N5817 smd diode 1n5819 equivalent 1N5818 smd BKC Semiconductors DO-213AB GLASS Schottky
Contextual Info: 1N5817 thru 1N5819 DO-41 Glass 1 Amp Use Advantages Schottky Rectifier Low forward voltage drop. Fast switching due to majority carrier conduction which results in high operating efficiencies because of Ipw power loss. Used in low voltage power supplies, high frequency inverters and converters,

1n5819 equivalent

Abstract: 1N5817-19 1N5817 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG
Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1n5819 equivalent

Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1n5819 equivalent

Abstract: 1n5819
Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5817

Abstract: 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL
Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation

datasheets diode 1n5818

Abstract: 1N5817 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL 1N5817-19
Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5817

Abstract: 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL
Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation

FULL WAVE RECTIFIER CIRCUITS

Abstract: 1N5818 1N5817 1N5819
Contextual Info: MOTOROLA Order this document by 1N5817/D SEMICONDUCTOR TECHNICAL DATA Axial Lead Rectifiers 1N5817 1N5818 1N5819 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal,

"Power Diode"

Abstract: 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS 10 Ampere Schottky bridge 1N5817 diode FULL WAVE RECTIFIER CIRCUITS Full wave rectifier datasheet 1N5818RLG 1N5819 1N5817 1N5817G
Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation

Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation

MBR130P

Abstract: MBR120P
Contextual Info: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA 1N5817 MBR115P 1N5818 MBR120P 1N5819 MBR130P MBR140P AXIAL LEAD RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-toconsr"jction with oxide passivation and metal overlap contact.

1N5819UR1 JANTX

Abstract: 1N5818-1 1N6761UR-1 MICROSEMI 1N6761-1 1N6761-1
Contextual Info: 1N5818UR-1, 1N5819UR-1, 1N6761UR-1 and CDLL variants Available on commercial versions Qualified Levels*: JAN, JANTX, JANTXV and JANS 1 Amp Schottky Barrier Rectifiers Qualified per MIL-PRF-19500/586 DESCRIPTION This 1 Amp schottky barrier rectifier is metallurgically bonded and offers military grade

P2353AA

Abstract: p2353ab MSAN-180 varistor VTR 150 20k tip 410 transistor varistor 10K 680 2N2222 tip 2N2907 audio transformer 200k to 1k LM393
Contextual Info: Application Note MSAN-180 Applications of the MT91610AQ Programmable Ringing SLIC AN5371 ISSUE 2 July 2001 Contents 1.0 1.0 Introduction The MT91610 is a flexible SLIC designed for use in multiple applications and countries. The Zarlink MT91610, with an external bipolar driver, provides

MSAN-180

Abstract: 1N5819 5KE220C MT91610 MT91610AQ Philips Varistor
Contextual Info: MT91610 Programmable Ringing SLIC Preliminary Information Features • • • • • • • • • • • • • • • DS5181 Transformerless 2W to 4W conversion Controls battery feed to line Programmable line impedance Programmable network balance impedance

Contextual Info: MT91610 Programmable Ringing SLIC Preliminary Information Features • • • • • • • • • • • • • • • DS5181 Transformerless 2W to 4W conversion Controls battery feed to line Programmable line impedance Programmable network balance impedance

MSAN-180

Abstract: varistor 20k 1N5819 5KE220C MT91610 MT91610AQ varistor VTR 150 20k transistor equivalent of tip 50 BAW101
Contextual Info: MT91610 Programmable Ringing SLIC Preliminary Information Features • • • • • • • • • • • • • • • DS5181 Transformerless 2W to 4W conversion Controls battery feed to line Programmable line impedance Programmable network balance impedance

Contextual Info: Zarlink Semiconductor, formerly Mitel Semiconductor, announced its new trade identity on May 29, 2001. To reflect that new identity, rebranding of all product documentation will be completed by August 31, 2001. MT91610 Programmable Ringing SLIC Preliminary Information

MSAN-180

Abstract: 2-wire intercom 330nF capacitor TIP NPN Zarlink Programmable SLIC application note 1N5819 5KE220C MT91610 MT91610AQ
Contextual Info: MT91610 Programmable Ringing SLIC Preliminary Information Features • • • • • • • • • • • • • • • DS5181 Transformerless 2W to 4W conversion Controls battery feed to line Programmable line impedance Programmable network balance impedance

P2353AA

Abstract: MSAN-180 TIP 21 transistor
Contextual Info: MT91610 Programmable Ringing SLIC Preliminary Information Features • • • • • • • • • • • • • • • DS5181 Transformerless 2W to 4W conversion Controls battery feed to line Programmable line impedance Programmable network balance impedance

MBR140P

Abstract: BR115P MBR130P MBR120P mbr115
Contextual Info: MOTOROLA SC -CDIODES/OPTO> 15E D 1 b3b75SS D07T573 1 T -0 3 MBR115P 1N5817 1N5818 MBR120P 1N5819 MBR130P MBR140P MOTOROLA SEM ICONDUCTOR TECHNICAL DATA A X I A L L E A D R E C T IF IE R S . . . employing the S ch o ttky Barrier principle in a large area metal-tosilicon power diode. State-of-the-art geometry features epitaxial

STPS30S45CT

Abstract: CTX12S STPS30S45 CTX12SL BYV42-200 D20LC20 Diode Equivalent DSEK60-02A stth3003cg stth3003cw CTL22S
Contextual Info: Rectifiers Selection guide February 2005 STMicroelectronics - February 2005 - Printed in Italy - All rights reserved The STMicroelectronics corporate logo is a registered trademark of the STMicroelectronics group of companies. All other names are the property of their respective owners.