EPROM AMD Search Results

Contextual Info: ADVAN CED MICRO DEVICES 13E D § 0 5 5 7 5 2 5 002*1251 2 | 87C525 T -W '/q -s c ji CMOS Single-Chip Microcontroller with 8K Bytes EPROM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS - EPROM version of the 80C525 8K bytes of EPROM Flashrite EPROM programming

Contextual Info: 8751H/8753H Single-Chip 8-Bit Microcontroller with 4K /8 K Bytes of EPROM DISTINCTIVE CHARACTERISTICS • • • • • • 4K X 8 EPROM 8751H ; 8 K x 8 EPROM (8753H) 1 2 8 x 8 RAM Four 8 -bit ports, 32 I/O lines; programmable serial port Two 16-bit Tim er/E vent counters

pal 005a

Abstract: pal 007a AM29CPL154 PAL 002a programmable pipeline microcode memory TS-1170 10136-028A
Contextual Info: Preliminary COM’L: -25/30 MIL: -25 Cl Advanced Micro Devices Am29CPL154H-25/30 CMOS 512-Word Field-Programmable Controller FPC DISTINCTIVE CHARACTERISTICS • Implements complex state machines 512-word by 36-blt CMOS EPROM ■ High-speed, low-power CMOS EPROM

SMJ320E15

Abstract: SMJ27C64
Contextual Info: SMJ320 FIRST-GENERATION DIGITAL SIGNAL PROCESSORS SMJ32QC10, SMJ320C15 JD PACKAGE TOP VIEW • 160/200-ns Instruction Cycle • 144/256-Word On-Chip Data RAM • 1.5K/4K-Word On-Chip Program ROM • 4K-Word On-Chip Program EPROM (SMJ320E15) • EPROM Code Protection for

29CPL154

Abstract: Am29CPL151
Contextual Info: P re lim in a ry COM’L: -25/30 MIL: -25 Cl Advanced Micro Devices Am29CPL154H-25/30 CMOS 512-Word Field-Programmable Controller FPC DISTINCTIVE CHARACTERISTICS • Implements complex state machines 512-word by 36-blt CMOS EPROM ■ High-speed, low-power CMOS EPROM

Contextual Info: The 8051 Family PART TECHNOLOGY ON-CHIP PROGRAM MEMORY 8051 AH 8031 AH 8751H Am9761H 80C51 80C31 NMOS NMOS NMOS NMOS CMOS CMOS 4K — ROM NONE 4K — EPROM 8K — EPROM 4K — ROM NONE ON-CHIP DATA MEMORY 128 128 128 128 128 128 THE MAJOR FEATURES OF THE 8051

am27h10

Contextual Info: ADV MIC RO M E MO RY MfiE D • Ü25752Ô □ D 3 0 l)13 5 ■ A M D 1» T-46-13-29 A m 2 7 H 0 1 0 Advanced 1 Megabit (131,072 x 8-Bit) High Speed CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Industry's fastest -45ns 1 megabit CMOS EPROM ■ Versions available in industrial and military

floating-gate

Abstract: Valence eeprom memory cell
Contextual Info: EEPROM Process Information PROCESS AND TECHNOLOGY AM D's EEPROM technology is based on the highly successful N-channel EPROM process that has had years of manufacturing history at AMD. To achieve the goal of electrical erasability, an additional masking step

Contextual Info: AMD£1 FINAL Am27X2048 2 Megabit 128 K x 16-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: ■ ±10% power supply tolerance — Factory optim ized program m ing ■ High noise immunity — Fully tested and guaranteed

Contextual Info: FINAL AMD£1 Am27X020 2 Megabit 256 K x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: ■ ±10% power supply tolerance — Factory optimized program m ing ■ High noise immunity — Fully tested and guaranteed

Contextual Info: AMD£1 FINAL Am27X020 2 Megabit 256 K x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: ■ ±10% power supply tolerance — Factory optim ized program m ing ■ High noise immunity — Fully tested and guaranteed

Contextual Info: ADV MI CRO MEMORY MflE » • 025752Ô 0D3QSSb S ■ AMD4 a Am27X64 Advanced Micro Devices 8,192 x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS ■ ■ ■ As an OTP EPROM alternative: - Factory optimized programming - Fully tested and guaranteed

Contextual Info: FINAL AMD£1 Am27X256 256 Kilobit 32 K x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: ■ ±10% power supply tolerance — Factory optim ized program m ing ■ High noise immunity — Fully tested and guaranteed

028-28-Pin

Contextual Info: AMDH Am27X512 512 Kilobit 64 K x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed ■ As a Mask ROM alternative: — Shorter leadtime — Lower volume per code

Contextual Info: AMD3 Am27X256 256 Kilobit 32 K x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed ■ As a Mask ROM alternative: — Shorter leadtime — Lower volume per code

SOCKET MXM

Abstract: AM27C020 Product Selector Guide
Contextual Info: FINAL AMDH Am27C020 2 Megabit 262,144 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time — 55 ns maximum access time ■ 100% Flashrite programming — Typical programming time of 32 seconds ■ Low power consumption — 100 |aA typical CMOS standby current

Contextual Info: F IN A L AMD£1 Am27X1024 1 Megabit 64 K x 16-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: ■ +10% power supply tolerance — Factory optim ized programming ■ High noise immunity — Fully tested and guaranteed

Contextual Info: AMDÌI DRAFT Am27C040 4 Megabit (524,288 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time — A vailable in speed options as fast as 90 ns ■ ±10% power supply tolerance standard on most speeds ■ 100% Flashrite programming ■ Low power consumption

Contextual Info: ADV MI CRO MEMORY bME D Q55752Ö GG3211Ö DflM • PRELIMINARY AMD1) a Advanced Micro Devices Am27LV020/Am27LV020B 2 Megabit (262,144 x 8-Bit) Low Voltage CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Single 3.3 V power supply — Regulated power supply 3.0 V -3 .6 V

Contextual Info: ADV MI CRO MEMORY 4ÛE D n 05S7S5Ô QQaGSbS t> • AMD4 T—4 6 —1 3 -2 5 Am27X128 Advanced Micro Devices 16,384 X 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS ■ ■ As an OTP EPROM alternative: - Factory optimized programming - Fully tested and guaranteed

a1334

Contextual Info: FINAL AMDÌ1 Am27C1024 1 Megabit 65 K x 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • ±10% power supply tolerance standard ■ Fast access time — Speed options as fast as 55 ns ■ 100% Flashrite programming ■ Low power consumption — Typical programming time of 8 seconds

11419E-1

Abstract: 11419E-2
Contextual Info: AMDH Am27C64 64 Kilobit 8 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V — Speed options as fast as 45 ns ■ High noise immunity ■ Versatile features for simple interfacing

SIGNAL PATH designer

Contextual Info: An Introduction to Electrically Erasable Read Only Memories EPROMs Advanced Micro Devices has consistently improved the CMOS process used to manufacture EPROMs to remain the technology leader in the marketplace. In addition to providing lower cost and higher density EPROM solutions, AMD’s advanced CMOS process creates the

Contextual Info: ADV MICRO MEMORY bME J> • 025752Û 0032000 554 ■ AMDM ZI Advanced Micro Devices Am27C040 4 Megabit (524,288 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access time ■ 100% Flashrite programming — 100 ns ■ Low power consumption — Typical programming time of 1 minute