AM27 Search Results

AM27EC08

Contextual Info: SUBMINIATURE SOLID STATE LAMP AM27EC08 HIGH EFFICIENCY RED Features OSUBMINIATURE PACKAGE. Description OWIDE VIEWING ANGLE. The High Efficiency Red source color devices are made with OYOKE LEAD. Gallium Arsenide Phosphide on Gallium Phosphide Orange OLONG LIFE-SOLID STATE RELIABILITY.

AM27SYCK08

Contextual Info: SUBMINIATURE SOLID STATE LAMP PRELIMINARY SPEC Part Number: AM27SYCK08 Super Bright Yellow Features Description z SUBMINIATURE PACKAGE. The Super Bright Yellow device is made with InGaAlP on z YOKE LEAD. GaAs substrate light emitting diode chip. z LONG LIFE - SOLID STATE RELIABILITY.

AM27SGD08

Contextual Info: SUBMINIATURE SOLID STATE LAMP AM27SGD08 SUPER BRIGHT GREEN Features Description OWIDE VIEWING ANGLE. The Super Bright Green source color devices are OSUBMINIATURE PACKAGE. made with Gallium Phosphide Green Light OYOKE LEAD. OLONG LIFE-SOLID STATE RELIABILITY.

AM27YC03

Contextual Info: SUBMINIATURE SOLID STATE LAMP PRELIMINARY SPEC Part Number: AM27YC03 Yellow Features Description z Subminiature package. The Yellow source color devices are made with Gallium z Gull wing. Arsenide Phosphide on Gallium Phosphide Yellow Light z Long life - solid state reliability.

AM27SGC09

Contextual Info: SUBMINIATURE SOLID STATE LAMP Part Number: AM27SGC09 Super Bright Green Features Description z SUBMINIATURE PACKAGE. The Super Bright Green source color devices are made with z WIDE VIEWING ANGLE. Gallium Phosphide Green Light Emitting Diode. z Z-BEND LEAD.

AM27ID08

Contextual Info: SUBMINIATURE SOLID STATE LAMP AM27ID08 HIGH EFFICIENCY RED Features Description OWIDE VIEWING ANGLE. The High Efficiency Red source color devices are OSUBMINIATURE PACKAGE. made with Gallium Arsenide Phosphide on Gallium OYOKE LEAD. OLONG LIFE-SOLID STATE RELIABILITY.

Contextual Info: Am27S41/27PS41 Am27S41/27PS41 16,384-Bit 4,096x4 Bipolar PROM DISTINCTIVE CHARACTERISTICS • AC performance is factory tested utilizing programmed test words and columns • Voltage and temperature compensated providing ex­ tremely flat AC performance over military range

27C400

Contextual Info: Am27C400 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit ROM Compatible CMOS EPROM DISTINCTIVE CHARACTERISTICS Single +5 V power supply • Fast access time ±10% power supply tolerance standard on most speeds — 100 ns ■ Low power consumption

IC cd4028 PIN DIAGRAM

Contextual Info: Am27S95 32,768 Bit 8 1 9 2 x 4 Bipolar Registered PROM with SSR Diagnostics Capability ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS On-chip diagnostic shift register for serial observability and controllability of the output register User-programmable Enable Pin for Asynchronous or

AM9708DM

Abstract: IC 2708
Contextual Info: Am9708/Am2708 1024 x 8 E rasab le R ead Only M em ory DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION • • • • • • • • The Am2708 is an 8,192-bit erasable and programmable MOS read-only memory. It is organized as 1024 words by 8 b its per word. E rasing the data in the EROM is

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Contextual Info: P R E L IM IN A R Y Am27X800 Advanced Micro Devices 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS ExpressROM Device • ±10% power supply tolerance ■ As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed

p-iris control

Contextual Info: Am27S65 Am27S65 4096-Bit 1 0 2 4 x 4 Bipolar Registered PROM with SSR Diagnostics Capability DISTINCTIVE CHARACTERISTICS On-chip diagnostic shift register for serial observability and controllability of the output register User-programmable Enable Pin for Asynchronous or

Am27C020

Contextual Info: a Advanced Micro Devices Am27C020 2 Megabit 262,144 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 90 ns ■ Low power consumption — Typical programming time of 32 seconds ■ Latch-up protected to 100 mA from -1 V to

eprom 27C512 28pin

Contextual Info: F IN A L A Am27C512 M D i l 512 Kilobit 64 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vc c + 1 V ■ Fast access time — Speed options as fast as 55 ns ■ High noise immunity ■ Low power consumption

AMD 27C040

Abstract: 27c040
Contextual Info: Advanced Micro Devices Am27C040 4 Megabit 524,288 X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • 100% Flashrite programming ■ Fast access time — Typical programm ing tim e of 1 minute — 100 ns ■ Latch-up protected to 100 mA from -1 V to ■ Low power consumption

Contextual Info: Am27C512 OTP 65,536 x 8-Bit CMOS One-Time Programmable ROM OTPROM Am27C512 OTP ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • Fast access time — 200 ns Low-power dissipation Both interactive and new Flashrite* programming algo­ rithms available

Contextual Info: Am27S35/Am27S37 8,192-Bit 1024x8 Bipolar Registered PROM with Programmable INITIALIZE Input Versatile programmable asynchronous or synchronous enable for simplified word expansion Buffered common INITIALIZE input either asynchronous (Am27S35) or synchronous (Am27S37)

Contextual Info: PRE LIM INARY Advanced Micro Devices Am27LV010/Am27LV01 OB 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Single +3.3 V power supply — Regulated power supply 3.0 V-3.6 V — Unregulated power supply 2.7 V-3.6 V (for battery operated systems)

Contextual Info: FINAL AMD£1 Am27X64 64 Kilobit 8 K x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: ■ ±10% power supply tolerance — Factory optim ized program m ing ■ High noise immunity — Fully tested and guaranteed

Contextual Info: Am27S18/19 256-Bit 32 x 8 Bipolar PROM > DISTINCTIVE CHARACTERISTICS 3 •Nj Ultra high speed Highly reliable, ultra-fast programming Piatinum-Silicide fuses High-programming yield • Low-current PNP inputs • High-current open collector and three-state outputs

Contextual Info: a PRELIMINARY Am27C800 Advanced Micro Devices 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit ROM Compatible CMOS EPROM_ DISTINCTIVE CHARACTERISTICS • Fast access time ■ Single +5 V power supply — 120 ns ■ ±10% power supply tolerance standard on

Contextual Info: a Advanced Micro Devices Am27X64 64 Kilobit 8,192 x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: ■ ±10% power supply tolerance — Factory optim ized programming ■ High noise immunity — Fully tested and guaranteed

Contextual Info: AM DP Am27X020 2 Megabit 256 K x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: ■ ±10% power supply tolerance ■ High noise immunity ■ Low power dissipation — Factory optimized programming — Fully tested and guaranteed

dk qs

Abstract: CLTO20
Contextual Info: Am27S31 512 X 8 Bipolar PROM High Low High Fast • • • • programming yield current PNP inputs current and three-state outputs chip select GENERAL DESCRIPTION of satisfying the requirements of a variety of microprogrammable controls, mapping functions, code conversion,