EM 231 CN Search Results

DIN 50014

Abstract: cny18 TFK 4 232 CNY18 -IV cny 76 TFK CNY 18 IV cny18 tfk
Contextual Info: «Sr CNY18 Optoelektronisches Koppelelement Optically Coupled Isolator Aufbau Construction Emitter: D etektor: G aAs-Lum ineszenzdiode Silizium-NPN-Epitaxial-Planar-Fototransistor Anwendungen: Galvanische Trennung von Strom kreisen, rückw irkungsfreier Schalter

SOT230

Abstract: 234 optocoupler CNX62A BS415 BS7002 T30 transistor
Contextual Info: Product specification P h ilip s Sem icon du ctor« High-voltage optocoupler CNX62A FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with TTL integrated circuits • High degree of A C and DC Insulation 3750 V (RMS and

SI 9503

Contextual Info: mmmm DIP 14 KJ I CJ B 3 • mm Q io i g • N t j oo Í o > > > i C c £ 5 > > Í ■Í 6 .4± o.2 : mm Q g T cn 2 > fX " cü o c £ ? } ? £ £ 5 £ } £ ■Í 5= 1 ? i» £ .£ t ip 0 .5 1 M IN 4 .7 M A X 2 .8 M IN I?s 1 6.4 i I DIP22 Oí DIP20 : mm uiui : 73

2SC3847

Abstract: 2SC3842 2SC3843 2SC3844 2SC3845 2SC3846 2SC3947
Contextual Info: FUJITSU MICROELECTRONICS 31E D B 3 7 4 c]7t.5 D 0 1 b b 4 S 4 Q FMI r January 1990 Edition 1.1 - — - 3 3 FUJITSU PRODUCT PROFILE 2SC3947 Silicon High Speed Power Transistor 2SC3947 50 0 V , 5A A B S O L U T E M A X IM U M R A T IN G S Parameter Sym bo l

transistor NEC B 617

Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and

msm62

Abstract: 8x12 font LM 327 CN 150PF 8X12 MA10 MSM6240 MSM6240GS lcd timing controller lm 74104
Contextual Info: OKI semiconductor MSM6240_ DOT M ATRIX LCD CO N TRO LLER G EN ER A L DESCRIPTION T h e O K I M SM 6240G S is a CM O S Si-gate L S I to control large size dot m atrix L C D in characters and graphics. Three kinds of display modes are provided; Semi-graphic mode. Full-graphic mode arid Character mode.

Contextual Info: ADV MICRO MEMORY I 57C4500-40/50/65/80 IM E D I 0557520 002022^ 2 • a High Density First-in First-out FIFO 256x9 CMOS Memory Advance Information ¡3 DISTINCTIVE CHARACTERISTICS o § Retransmit capability Expandable In both width and_depth Increased noise Immunity for XI - CMOS

AWM style 2789 VW-1

Abstract: TDA 0200
Contextual Info: HARTING Cable Assemblies People | Power | Partnership HARTING worldwide Transforming customer wishes into concrete solutions The HARTING Technology Group is skilled in the fields of electrical, electronic and optical connection, transmission and networking, as well as in manufacturing, mechatronics and

X85C

Abstract: BDX 71 bdx85 3ALF bdx85b BDX86B X85B
Contextual Info: fZ T ^ 7 # S C S -T H O M S O N * ^ ( a & lO T ( g M S B D X 8 5 /8 5 A /8 5 B /8 5 C B D X 8 6 / 8 6 A /8 6 B /8 6 C POWER DARLINGTONS DESCRIPTION The BDX 85, BDX 85A, BDX 85B and BDX 85C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are moun­

Contextual Info: P6SMBJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER 600 Watts 5.0 to 220 Volts STAND-OFF VOLTAGE Recongnized File # E210467 0.155 3.94 0.130(3.30) FEATURES • For surface mounted applications in order to optimize board space. 0.083(2.11) 0.075(1.91)

S219P

Abstract: ep 1387
Contextual Info: TELEFUNKEN ELECTRONIC 17E 1> fl^SOQ^b OOOflSflE 0 IAL66 S 219 P TStUllFMI^IN electronic CrMtn* Technotog*s - Silicon Photo PIN Diode P-Type Applications: T-Ml'53 Wide band detector for demodulation of fast signals, e.g. of lasers and GaAs-LED's. -Detector for optical communication, e. g. for optical-fiber transmission systems and

ST EZ 711 253

Abstract: ST EZ 725
Contextual Info: P6SMBJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER 600 Watts 5.0 to 220 Volts STAND-OFF VOLTAGE Recongnized File # E210467 0.155 3.94 0.130(3.30) FEATURES • For surface mounted applications in order to optimize board space. 0.083(2.11) 0.075(1.91)

MA702C

Abstract: MA776C MA740A 715C MA709C MA747 MAF355 MA776
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS LINEAR L-OA1 /iA302, mA310, mA714C/E/L L -O A 2 MA307 L-OA3 mA308, mA308A NC vMetal Can and Mini-Dip Connection Shown L -O A 4 MÄ702C L -O A 5 mA 7 0 9 C IN F R E Q C O M P L-OA6 M Ä725C/E n c K F T TAB V- Metal Can and Mini-Dip

0808M

Abstract: 0808L VN0808M BSR67 VN0808L equivalent VN0808L 2N6661 2n666
Contextual Info: WZW* VN0808L ELECTRICAL CHARACTERISTICS Siliconix incorporated t a = 2 S °C u n le s s o th e rw is e n o te d P A R A M E T E R S /T E S T C O N D IT IO N S D raln-S o u rce Breakdown Voltage V q s = 0 , I q = 10 jxA Sym bol M in . T yp . M ax. V(BR)DSS

603 57F

Abstract: pin diagram of serial lcd display 16x2 6240G
Contextual Info: O K I Semiconductor MSM6240 D O T M A T R IX L C D C O N T R O L LE R GENERAL DESCRIPTION The M SM 6240G S is a C M O S Si-gate LSI to control a large dot m atrix LC D for characters and graphics. T h ree kinds o f display m odes are provided; Sem i-graphic m ode, Fu ll-graphic m ode and

SMBJ8.5CA

Abstract: marking code MF marking code KP marking code nt marking WM SMBJ15A SMBJ11CA DK marking code SMBJ15 SMBJ18* GS
Contextual Info: MCC SMBJ5.0 THRU SMBJ170CA
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features l For surface mount applicationsin or der to optimize boar d space l L ow pr ofil e package l Fast response time: typical less than 1.0ps from 0 volts to

wm bn bm 04

Abstract: SMBJ8.5CA SMBJ11CA SMBJ170A SMBJ130CA SMBJ17A SMBJ14CA SMBJ16CA SMBJ6.5A SMBJ160CA
Contextual Info: MCC SMBJ5.0 THRU SMBJ170CA
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features l For surface mount applicationsin or der to optimize boar d space l L ow pr ofil e package l Fast response time: typical less than 1.0ps from 0 volts to

SMBJ8.5CA

Abstract: SMBJ11CA SMBJ8.0A marking code mf mcc kd smbj marking code DX wm bn bm 04 SMBJ130A SMBJ170A SMBJ130CA
Contextual Info: MCC TM Micro Commercial Components SMBJ5.0 THRU SMBJ170CA
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features l For surface mount applicationsin or der to optimize boar d space l L ow pr ofil e package

P6SMBJ10

Abstract: P6SMBJ10A P6SMBJ11 P6SMBJ11A P6SMBJ12 P6SMBJ220
Contextual Info: P6SMBJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE 5.0 to 220 Volts PEAK PULSE POWER 600 Watts SMB/DO-214AA Unit: inch mm FEATURES • For surface mounted applications in order to optimize board space. .155(3.94) .130(3.30) • Low profile package

P6SMBJ10

Abstract: P6SMBJ10A P6SMBJ11 P6SMBJ220
Contextual Info: P6SMBJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER 600 Watts 5.0 to 220 Volts STAND-OFF VOLTAGE Recongnized File # E210467 FEATURES • For surface mounted applications in order to optimize board space. • Low profile package • Built-in strain relief

Contextual Info: P6SMBJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER 600 Watts 5.0 to 220 Volts STAND-OFF VOLTAGE Recongnized File # E210467 FEATURES • For surface mounted applications in order to optimize board space. • Low profile package • Built-in strain relief

358 ez 830

Abstract: EZ 711 253 lz do-214aa smb marking mp DM 311 BG E210467 STAD-MAY25 DM 311 BG 43 ev 2816 P6SMBJ26CA
Contextual Info: Q u a l it y C. P6SMBJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE | 5.0 to 220 Volts I E S t i i l l l l d i i i i i f f l U I 600 W atts I Unit; Inch mm) Recongnized File # E210467 • For surface mounted applications in order to optimize board space.

2SK1067

Abstract: high power amp 100mhz 1w
Contextual Info: SANYO SEMICONDUCTOR CORP ESE D 7^707^ O O G t m 2SK1067 3 T -3 I-2 S 2057 N-Channel M O S Silicon FET FM Tuner, VHF-Band a _ a _ i : _ i . : _ 2719 F e a tu r e s •Low noise N F = 1.8dB typ f=100M H z • H igh power gain P G = 27dB typ(f= 100MHz)

BCY 59

Abstract: BCY 12 BCY58X BCY 85 BCY59 BCY59X BCY58 BCY58-VIII Ucesat BCY 58
Contextual Info: N P N -Transistoren fü r N F -V o r- und T re ib erstu fen sow ie S ch alteran w en dungen - BCY 58 BCY 59 BCY 65 E BCY 58, BCY 59 und BCY 65 E sind epitaktische NPN-Silizium -Planar-Transistoren im Gehäuse 18 A 3 DIN 41 876 T O -1 8 . Der Kollektor ist m it dem Gehäuse elektrisch ver­