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    ELITE SEMICONDUCTOR MEMORY TECHNOLOGY NAND Search Results

    ELITE SEMICONDUCTOR MEMORY TECHNOLOGY NAND Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM9513ADIB
    		Rochester Electronics LLC AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40 PDF Buy
    ICL7667MJA
    		Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    CA3140AT/B
    		Rochester Electronics LLC CA3140 - Operational Amplifier, 1 Func, 15000uV Offset-Max, BIMOS PDF Buy
    CA3130AT/B
    		Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy
    CA3140T
    		Rochester Electronics LLC CA3140 - Operational Amplifier, 1 Func, 15000uV Offset-Max, BIMOS, MBCY8 PDF Buy

    ELITE SEMICONDUCTOR MEMORY TECHNOLOGY NAND Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: ESM T Preliminary F59L4G81A Operation Temperature Condition -40 C~85 C Flash 4 Gbit (512M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase


    Original     		F59L4G81A 250us PDF

    F59L4G81A

    Abstract: F59L two-plane program nand "4bit correction"
    Contextual Info: ESMT Preliminary F59L4G81A Operation Temperature Condition -40°C~85°C Flash 4 Gbit (512M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase


    Original     		F59L4G81A 4bit/512Byte F59L4G81A F59L two-plane program nand "4bit correction" PDF

    Esmt

    Abstract: F59D2G81A
    Contextual Info: ESMT Preliminary F59D2G81A Operation Temperature Condition -40°C~85°C Flash 2 Gbit (256M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase


    Original     		F59D2G81A 4bit/512Byte Esmt F59D2G81A PDF

    NAND Flash

    Contextual Info: ESMT F59D2G81A / F59D2G161A Flash 2 Gbit 256M x 8 / 128M x 16 1.8V NAND Flash Memory FEATURES       Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization x8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (128M + 4M) x 16bit


    Original     		F59D2G81A F59D2G161A 16bit NAND Flash PDF

    Contextual Info: ESMT F59L512M81A Preliminary Flash 512Mbit (64M x 8) 3.3V NAND Flash Memory FEATURES z z z z z z z z z Voltage Supply: 2.7V ~ 3.6V Organization - Memory Cell Array: (64M + 2M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte


    Original     		F59L512M81A 512Mbit 250us it/512 100in PDF

    F59L2G81A

    Abstract: F59L2G81A, F59L2G81 two-plane program nand bsc 60h
    Contextual Info: ESMT Preliminary F59L2G81A Operation Temperature Condition -40°C~85°C Flash 2 Gbit (256M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase


    Original     		F59L2G81A 4bit/512Byte F59L2G81A F59L2G81A, F59L2G81 two-plane program nand bsc 60h PDF

    Contextual Info: ESM T Preliminary F59L2G81A Operation Temperature Condition -40 C~85 C Flash 2 Gbit (256M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase


    Original     		F59L2G81A 250us PDF

    Contextual Info: ESM T Preliminary F59D4G81A Operation Temperature Condition -40 C~85 C Flash 4 Gbit (512M x 8) 1.8V NAND Flash Memory FEATURES         Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit


    Original     		F59D4G81A 250us PDF

    NAND Flash

    Abstract: F59L2G81A
    Contextual Info: ESMT F59L2G81A Flash 2 Gbit 256M x 8 3.3V NAND Flash Memory FEATURES         Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) byte


    Original     		F59L2G81A 350us NAND Flash F59L2G81A PDF

    NAND Flash

    Contextual Info: ESMT F59D4G81A / F59D4G161A Flash 4 Gbit 512M x 8 / 256M x 16 1.8V NAND Flash Memory FEATURES       Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (256M + 4M) x 16bit


    Original     		F59D4G81A F59D4G161A 16bit NAND Flash PDF

    Contextual Info: ESM T Preliminary F59D2G81A Operation Temperature Condition -40 C~85 C Flash 2 Gbit (256M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase


    Original     		F59D2G81A 250us PDF

    Contextual Info: ESMT F59D2G81A Operation Temperature Condition -40°C~85°C Flash 2 Gbit 256M x 8 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase


    Original     		F59D2G81A 250us PDF

    Contextual Info: ESMT F50L1G41A 2Y Flash 3.3V 1 Gbit SPI-NAND Flash Memory PRODUCT LIST Parameters Values VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Time Note: 1. x2 PROGRAM operation is not defined. 3.3V


    Original     		F50L1G41A 104MHz 104MT/s 100us PDF

    two-plane program nand

    Contextual Info: ESMT Preliminary Flash F59L4G81A 4 Gbit (512M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes


    Original     		F59L4G81A 250us 4bit/512Byte two-plane program nand PDF

    F59D4G81A

    Contextual Info: ESMT Preliminary F59D4G81A Operation Temperature Condition -40°C~85°C Flash 4 Gbit (512M x 8) 1.8V NAND Flash Memory FEATURES         Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit


    Original     		F59D4G81A 4bit/512Byte F59D4G81A PDF

    Contextual Info: ESMT F59D4G81A Operation Temperature Condition -40°C~85°C Flash 4 Gbit 512M x 8 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase


    Original     		F59D4G81A 250us PDF

    F59D1G81A

    Abstract: 1G NAND flash Elite Semiconductor Memory Technology nand
    Contextual Info: ESMT F59D1G81A Flash 1 Gbit 128M x 8 1.8V NAND Flash Memory FEATURES z z z z z z z Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte


    Original     		F59D1G81A 1bit/528Byte F59D1G81A 1G NAND flash Elite Semiconductor Memory Technology nand PDF

    Contextual Info: ESMT F59L1G81MA 2Y Flash 1 Gbit (128M x 8) 3.3V NAND Flash Memory FEATURES z z z z z z z z Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte


    Original     		F59L1G81MA 300us 4bit/512Byte, PDF

    Contextual Info: ESMT F50L512M41A Flash 3.3V 512 Mbit SPI-NAND Flash Memory PRODUCT LIST Parameters Values VCC VCCQ1 Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Time Note: 1. VCCQ should be the same as VCC. 2. x2 PROGRAM operation is not defined.


    Original     		F50L512M41A 104MHz 104MT/s PDF

    Contextual Info: ESMT F59D512M81A Preliminary Flash 512Mbit (64M x 8) 1.8V NAND Flash Memory FEATURES z z z z z z z z z Voltage Supply: 1.7V ~ 1.95V Organization - Memory Cell Array: (64M + 2M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte


    Original     		F59D512M81A 512Mbit 250us it/512 PDF

    Contextual Info: ESM T F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes - Block Erase: (128K + 4K) bytes


    Original     		F59L1G81A 200us it/528 PDF

    Contextual Info: ESMT F59L512M81A Flash 512Mbit 64M x 8 3.3V NAND Flash Memory FEATURES          Voltage Supply: 2.7V ~ 3.6V Organization - Memory Cell Array: (64M + 2M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte


    Original     		F59L512M81A 512Mbit 250us PDF

    1G NAND flash

    Abstract: F59L1G81A F59L
    Contextual Info: ESMT F59L1G81A Operation Temperature Condition -40°C~85°C Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit


    Original     		F59L1G81A 200us 1G NAND flash F59L1G81A F59L PDF

    F59L1G81A

    Contextual Info: ESMT F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes


    Original     		F59L1G81A 200us F59L1G81A PDF