ELECTRONIC TRANSISTOR CORP Search Results

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BB1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The BB1 Series is an N type small signal transistor and enables the reduction of component counts and downsizing of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic

BUT93

Abstract: BY22B T3311 C 3311 transistor 14A3 BFX34 BY228 AEG v 300 transistor sc3 T-33-11
Contextual Info: A E G CORP 17E D 002=142^ G QCHSBI fi BUT 93 •BHILIIFmiMKiliia electronic Creative Technologies r-2 3 -il Silicon NPN Power Transistor A p p lic a tio n : Switching mode power supply, electronic ballast Features: • In m ulti diffusion technique • Short sw itching tim e

Contextual Info: KSC5603D NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • Equivalent Circuit C High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application

C11531E

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BP1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching The BP1 Series is an N type small signal transistor and enables the reduction of component counts and downsizing of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic appliances and OA

FJE5304D

Contextual Info: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application

j5304d

Abstract: J5304 J530 FJU5304DTU free transistor and ic equivalent data o Transistor AND DIODE Equivalent list FJU5304D transistor j5304d
Contextual Info: FJU5304D High Voltage Fast Switching Transistor FJU5304D High Voltage Fast Switching Transistor Features • • • • Built-in Free Wheeling Diode Wide Safe Operating Area Small Variance in Storage Time Suitable for Electronic Ballast Application Equivalent Circuit

TRANSISTOR A22

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BP1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching The BP1 Series is an N type small signal transistor and enables the reduction of component counts and downsizing of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic appliances and OA

trace code TO-220

Abstract: J3307D-1 SWITCH IC J3307 transistor Electronic ballast 3307D
Contextual Info: FJP3307D High Voltage Fast Switching NPN Power Transistor FJP3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram

AEG T 25 N 1000

Abstract: ps2ms QS 100 NPN Transistor S100 NPN Transistor BYV16 MS 3894 N BUT54
Contextual Info: A E G CORP 17E D QQSTMSta OGQTSSl Q BUT 54 electronic r - 33-13 C^atN«Tech«j*os'es Silicon NPN Power Transistor A p p lic a tio n : Sw itching mode power supply, electronic ballast Features: • In multi diffusion technique Short sw itching tim e • Glass passivation

j5554

Abstract: FJP5554 FJP5554TU
Contextual Info: FJP5554 High Voltage Fast Switching Transistor FJP5554 High Voltage Fast Switching Transistor Features • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application 1 1.Base TO-220 2.Collector 3.Emitter Absolute Maximum Ratings

Contextual Info: FJN13003 FJN13003 High Voltage Switch Mode Application • High Speed Switching • Suitable for Electronic Ballast up to 21W TO-92 1 1. Emitter 2. Collector 3.Base NPN Silicon Transistor Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

STD5915

Abstract: NPN transistor Electronic ballast to92
Contextual Info: STD5915 Semiconductor NPN Silicon Power Transistor Features • High Voltage, high speed switching • VCEO sus =530V • Suitable for Switching Regulator and Motor Control, Electronic Ballast Ordering Information Type NO. Marking Package Code STD5915 STD5915

Contextual Info: FJP5304D NPN Silicon Transistor High Voltage High Speed Power Switch Application • • • • Wide Safe Operating Area Built-in Free Wheeling diodeSuitable for Electronic Ballast Application Suitable for ElectronicBallast Application Small Variance in Storage Time

J5555

Abstract: FJD5555 FJD5555TM US Global Sat
Contextual Info: FJD5555 NPN Silicon Transistor Features • • • • High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application DPAK 1 Marking : J5555 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings*

Contextual Info: FJP13007 High Voltage Fast-Switching NPN Power Transistor High Voltage High Speed Power Switch Application • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 1.Base Absolute Maximum Ratings

KSD5041

Contextual Info: KSD5041 NPN EPITAXIAL SILICON TRANSISTOR AF OUTPUT AMPLIFIER FOR ELECTRONIC FLASH UNIT TO-92 • Low Collector-Emitter Saturation Voltage • High Performance at Low Supply Voltage ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Base Voltage

J13009-1

Abstract: j13009 FJPF13009
Contextual Info: FJPF13009 NPN Silicon Transistor Features • High-Voltage Capability • High Switching Speed TO-220 1 • Suitable for Electronic Ballast and Switched Mode Power Supply 1.Base 2.Collector 3.Emitter Ordering Information Part Number 1 Marking Package Packing Method

transistor BU 102

Abstract: transistor application transistor K 903 T-33-13 br 903 t33-13 ZC125 AEG v 300
Contextual Info: A E G CORP 1?E D □ Q S T HS t a QGGTSQB T BU 903 electronic CreatviTechnotogies T- 33-13 Silicon NPN Power Transistor Application: Switching mode power supply Features: • In triple diffusion technique • Short switching time • Glass passivation • Power dissipation 125 W

FJN3303FTA

Abstract: J3303F
Contextual Info: FJN3303F High Voltage Fast-Switching NPN Power Transistor Features • • • • High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Charger Green packaging TO-92 1 1. Emitter 2. Collector 3.Base Absolute Maximum Ratings Symbol

j3305

Abstract: j3305h1 FJD3305H1TM QS 100 NPN Transistor transistor Electronic ballast electronic ballast with npn transistor fjd3
Contextual Info: FJD3305H1 NPN Silicon Transistor Features • • • • • High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application Wave Soldering DPAK 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings*

TLP91

Abstract: TLP910
Contextual Info: TLP910 T O SH IB A TENTATIVE TLP91 0 TOSHIBA PHOTO REFLECTIVE SENSOR GaAs LED + PHOTO TRANSISTOR PHOTO-REFLECTIVE SENSOR FOR SURFACE MOUNT FOR REFLOW SOLDERING USE ONLY DETECTION OF VCR REEL ROTATION TIMING DETECTION FOR ELECTRONIC PRINTERS AND TYPEWRITERS

Contextual Info: FJP5554 High Voltage Fast Switching Transistor Features • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application 1 1.Base TO-220 2.Collector 3.Emitter Absolute Maximum Ratings Symbol Parameter Value Units 1050 V

j3305h1

Contextual Info: FJD3305H1 NPN Silicon Transistor Features • • • • • High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application Wave Soldering DPAK 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings*